IRFHM8337TRPBF N-Channel 30V 12A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFHM8337TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 12A continuous drain current at 25°C. This device is part of the HEXFET® series and is housed in an 8-PQFN (3.3x3.3) surface mount package. The part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Id)	12	A (Ta)
On-State Resistance (Rds On) @ 12A, 10V	12.4	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Gate Charge (Qg) @ 4.5V	8.1	nC
Input Capacitance (Ciss) @ 15V	755	pF
Power Dissipation (Ta)	2.8	W
Power Dissipation (Tc)	25	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	8-PQFN (3.3x3.3)	Surface Mount
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRFHM8337TRPBF are selected based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 30V or higher
Continuous Drain Current (Id): 8A or higher at 25°C
On-State Resistance (Rds On): 15 mOhm or lower at rated current and 10V gate drive
Gate Threshold Voltage (Vgs(th)): 2.0V to 3.0V
Maximum Gate Voltage (Vgs): ±20V or higher
Operating Temperature Range: -55°C to 150°C minimum
Package Type: Surface mount 8-pin configurations (8-PQFN, 8-MLP, 8-TSDSON, 8-HSMT, 8-DFN, PowerFlat, PowerPAK)
RoHS3 Compliance and MSL Level 1 required

Substitute parts are grouped by manufacturer and product status (Active vs. Obsolete). Parts with active product status are prioritized for new designs. All substitutes maintain N-Channel MOSFET technology with compatible electrical characteristics within the specified parameter ranges.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Package	Status
IRFHM8337TRPBF	Infineon	30	12 (Ta)	12.4 @ 12A, 10V	2.35	8.1 @ 4.5V	755 @ 15V	8-PQFN (3.3x3.3)	Obsolete
BSZ0909NSATMA1	Infineon	34	9 (Ta), 36 (Tc)	12 @ 20A, 10V	2.0	17 @ 10V	1310 @ 15V	8-TSDSON	Active
BSZ130N03LSGATMA1	Infineon	30	10 (Ta), 35 (Tc)	13 @ 20A, 10V	2.2	13 @ 10V	970 @ 15V	8-TSDSON	Active
DMG4468LFG-7	Diodes Incorporated	30	7.62 (Ta)	15 @ 11.6A, 10V	2.0	18.85 @ 10V	867 @ 10V	8-DFN	Active
DMS3014SFG-7	Diodes Incorporated	30	9.5 (Ta)	13 @ 10.4A, 10V	2.2	45.7 @ 10V	4310 @ 15V	8-POWERDI3333	Active
FDMC8878	onsemi	30	9.6 (Ta), 16.5 (Tc)	14 @ 9.6A, 10V	3.0	26 @ 10V	1230 @ 15V	8-MLP (3.3x3.3)	Obsolete
FDMC8882	onsemi	30	10.5 (Ta), 16 (Tc)	14.3 @ 10.5A, 10V	2.5	20 @ 10V	945 @ 15V	8-MLP (3.3x3.3)	Active
RQ3E080BNTB	Rohm Semiconductor	30	8 (Ta)	15.2 @ 8A, 10V	2.5	14.5 @ 10V	660 @ 15V	8-HSMT (3.2x3)	Active
RQ3E100MNTB1	Rohm Semiconductor	30	10 (Ta)	12.3 @ 10A, 10V	2.5	9.9 @ 10V	520 @ 15V	8-HSMT (3.2x3)	Not For New Designs
SI7716ADN-T1-GE3	Vishay Siliconix	30	16 (Tc)	13.5 @ 10A, 10V	2.5	23 @ 10V	846 @ 15V	PowerPAK® 1212-8	Active
STL10N3LLH5	STMicroelectronics	30	9 (Tc)	19 @ 4.5A, 10V	2.5	6 @ 4.5V	900 @ 25V	8-PowerFlat (3.3x3.3)	Active

Engineering Selection Recommendations

For Direct Replacement (Matched Electrical Performance):

RQ3E100MNTB1 (Rohm Semiconductor) provides the closest electrical match to the IRFHM8337TRPBF with 10A continuous drain current, 12.3 mOhm on-state resistance, and identical 30V Vdss rating. However, this part is classified as "Not For New Designs." For new designs requiring this performance level, FDMC8882 (onsemi) is recommended as an active alternative with 10.5A continuous drain current and 14.3 mOhm on-state resistance in an 8-MLP package compatible with the original footprint.

For Higher Current Applications:

BSZ130N03LSGATMA1 (Infineon) offers 10A continuous drain current at 25°C with 35A capability at Tc, providing improved thermal performance. This part maintains 30V Vdss and is actively supported by the manufacturer.

For Compact Packaging with Enhanced Thermal Performance:

SI7716ADN-T1-GE3 (Vishay Siliconix) delivers 16A continuous drain current in a PowerPAK® 1212-8 package with superior thermal dissipation (27.7W at Tc). This part is suitable for applications requiring higher current handling or improved thermal management.

For Cost-Optimized Designs:

FDMC8878 (onsemi) provides 9.6A continuous drain current with 14 mOhm on-state resistance in the same 8-MLP (3.3x3.3) footprint as the original part. Although classified as obsolete, it remains in stock with 23,100 units available.

All recommended substitutes maintain RoHS3 compliance, MSL Level 1 moisture sensitivity rating, and -55°C to 150°C operating temperature range. Package compatibility must be verified against PCB layout requirements before final selection.

Frequently Asked Questions (FAQ)

Q: Can I use a substitute part with higher Vdss rating than the original IRFHM8337TRPBF?

A: Yes. A higher Vdss rating (such as 34V in the BSZ0909NSATMA1) is electrically compatible and provides additional voltage margin. The circuit will operate correctly as long as the actual applied voltage does not exceed the original 30V specification.

Q: What is the significance of the difference between Ta (ambient temperature) and Tc (case temperature) current ratings?

A: Ta rating represents continuous drain current under ambient temperature conditions without active cooling. Tc rating represents current capability when the case is actively cooled to 25°C. For thermal design, use the Ta rating for conservative estimates unless active cooling is implemented.

Q: Are all substitute parts pin-compatible with the IRFHM8337TRPBF?

A: All listed substitutes are 8-pin surface mount devices with N-Channel MOSFET configuration. However, package types differ (8-PQFN, 8-MLP, 8-TSDSON, 8-HSMT, 8-DFN, PowerFlat, PowerPAK). Physical footprints vary, requiring PCB layout verification. Pin assignments must be confirmed against individual datasheets before PCB design.

Q: Why is RQ3E100MNTB1 marked as "Not For New Designs" if it provides the best electrical match?

A: This designation indicates the manufacturer (Rohm Semiconductor) is discontinuing support for this part number. While existing inventory is available (6,022 units), new designs should select from active product status alternatives such as FDMC8882 or BSZ130N03LSGATMA1 to ensure long-term supply chain stability.

Q: How do I determine if on-state resistance (Rds On) differences will affect circuit performance?

A: Rds On directly impacts power dissipation and heat generation. The formula is P = I²R. For a 10A application, the difference between 12.4 mOhm (original) and 14.3 mOhm (FDMC8882) results in approximately 1.9W versus 2.0W dissipation—a negligible difference. For higher currents or thermal-sensitive applications, select parts with lower Rds On values.

Q: What does MSL Level 1 mean for component handling?

A: MSL (Moisture Sensitivity Level) 1 indicates unlimited shelf life without moisture control. All listed substitutes carry MSL 1 rating, eliminating the need for desiccant storage or baking procedures before soldering. Standard warehouse storage conditions are acceptable.

Q: Can I substitute a part with lower gate charge (Qg) than the original?

A: Yes. Lower gate charge (such as STL10N3LLH5 with 6 nC at 4.5V) reduces gate drive power requirements and switching losses. This is beneficial for high-frequency switching applications. Verify that the gate drive circuit can supply the required voltage and current for the selected part.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry RoHS3 compliance certification. This ensures compatibility with environmental regulations and procurement requirements for RoHS-restricted applications.

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