IRFHM831TRPBF N-Channel 30V MOSFET Equivalent & Substitute Parts

Part Overview

The IRFHM831TRPBF is an N-Channel 30V MOSFET manufactured by Infineon Technologies in the HEXFET® series. This device is rated for 14A continuous drain current at 25°C (Ta) and 40A at case temperature (Tc), with a maximum power dissipation of 2.5W (Ta) and 27W (Tc). The part is packaged in a Surface Mount PQFN (3x3) configuration and is classified as Obsolete product status. Due to its obsolete classification, equivalent and substitute parts from active manufacturers are necessary for new designs and ongoing production requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	14	A
Continuous Drain Current @ Case Temp (Tc)	40	A
RDS(on) Max @ 12A, 10V	7.8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Gate Charge (Qg) @ 10V	16	nC
Input Capacitance (Ciss) @ 25V	1050	pF
Power Dissipation Max (Ta)	2.5	W
Power Dissipation Max (Tc)	27	W
Operating Temperature Range	-55 to 150	°C
Mounting Type	Surface Mount	-
Package	PQFN (3x3)	-
Moisture Sensitivity Level	1 (Unlimited)	-

Substitute Part Grouping Explanation

Substitution of the IRFHM831TRPBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 30V (exact match required)
Continuous Drain Current @ 25°C (Ta): minimum 14A
RDS(on) characteristics: comparable on-resistance at specified gate voltage
Gate Threshold Voltage (Vgs(th)): within acceptable operating range
Operating Temperature Range: -55°C to 150°C (minimum requirement)
Mounting Type: Surface Mount
Moisture Sensitivity Level: 1 (Unlimited)

Secondary Compatibility Factors:

Gate Charge (Qg) and Input Capacitance (Ciss) affect switching performance
Power Dissipation capability at both Ta and Tc conditions
Package footprint compatibility (PQFN, PQFN, DFN, VSON, HSMT, PowerFlat variants)

The substitute parts listed below meet these criteria with active product status and current manufacturing availability.

Parameter Comparison

Parameter	IRFHM831TRPBF	FDMS7692	AON6414A	CSD17308Q3	CSD17578Q3A	CSD17578Q3AT	RQ3E130BNTB	STL11N3LLH6
Manufacturer	Infineon	onsemi	Alpha & Omega	Texas Instruments	Texas Instruments	Texas Instruments	Rohm	STMicroelectronics
Vdss (V)	30	30	30	30	30	30	30	30
Id @ 25°C Ta (A)	14	14	13	14	20	20	13	11
Id @ Tc (A)	40	28	30	44	N/A	N/A	N/A	11
RDS(on) Max (mOhm)	7.8 @ 12A, 10V	7.5 @ 13A, 10V	8 @ 20A, 10V	10.3 @ 10A, 8V	7.3 @ 10A, 10V	7.3 @ 10A, 10V	6 @ 13A, 10V	7.5 @ 5.5A, 10V
Vgs(th) Max (V)	2.35 @ 25µA	3 @ 250µA	2.5 @ 250µA	1.8 @ 250µA	1.9 @ 250µA	1.9 @ 250µA	2.5 @ 1mA	1 @ 250µA (Min)
Qg @ 10V (nC)	16	22	24	5.1 @ 4.5V	22.2	22.2	36	17 @ 4.5V
Ciss Max (pF)	1050 @ 25V	1350 @ 15V	1380 @ 15V	700 @ 15V	1590 @ 15V	1590 @ 15V	1900 @ 15V	1690 @ 24V
Power Dissipation Ta (W)	2.5	2.5	2.3	2.7	3.2	3.2	2	2
Power Dissipation Tc (W)	27	27	31	N/A	37	37	N/A	50
Operating Temp Range (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	PQFN (3x3)	8-PQFN (5x6)	8-DFN (5x6)	8-VSON-CLIP (3.3x3.3)	8-VSONP (3x3.3)	8-VSONP (3x3.3)	8-HSMT (3.2x3)	PowerFlat (3.3x3.3)
Product Status	Obsolete	Active	Active	Active	Active	Active	Active	Active
RoHS Status	N/A	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
REACH Status	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected	REACH Unaffected

Engineering Selection Recommendations

Primary Substitute - FDMS7692 (onsemi): The FDMS7692 is the closest functional equivalent to the IRFHM831TRPBF. It maintains identical Vdss (30V), matching Ta drain current (14A), and equivalent power dissipation characteristics (2.5W Ta, 27W Tc). The RDS(on) specification of 7.5mOhm at 13A, 10V is comparable to the original part. This device is Active product status with ROHS3 compliance and unlimited MSL rating. The 8-PQFN (5x6) package requires PCB layout verification for footprint compatibility.

Secondary Substitute - CSD17578Q3A / CSD17578Q3AT (Texas Instruments): Both CSD17578 variants offer enhanced drain current capability (20A Ta) with superior RDS(on) performance (7.3mOhm at 10A, 10V). These NexFET™ series devices provide higher power dissipation at Tc (37W) and are Active products with ROHS3 compliance. The 8-VSONP (3x3.3) package is compact and suitable for space-constrained applications. CSD17578Q3AT has lower inventory (7738 pcs) compared to CSD17578Q3A (25200 pcs).

Alternative Substitute - AON6414A (Alpha & Omega Semiconductor): The AON6414A provides 13A Ta drain current with 30A Tc capability and 8mOhm RDS(on) at 20A, 10V. Power dissipation reaches 31W at Tc, exceeding the original specification. This device is Active with ROHS3 compliance. The 8-DFN (5x6) package footprint differs from the original PQFN configuration.

Alternative Substitute - CSD17308Q3 (Texas Instruments): The CSD17308Q3 NexFET™ device matches the 14A Ta drain current specification with exceptional 44A Tc capability. However, the RDS(on) specification of 10.3mOhm at 10A, 8V is higher than the original part. Gate charge is significantly lower (5.1nC at 4.5V), indicating faster switching characteristics. The 8-VSON-CLIP (3.3x3.3) package is compact. This device is Active with ROHS3 compliance.

Alternative Substitute - RQ3E130BNTB (Rohm Semiconductor): The RQ3E130BNTB provides 13A Ta drain current with superior RDS(on) performance (6mOhm at 13A, 10V). Power dissipation is limited to 2W at Ta. The 8-HSMT (3.2x3) package is compact. This device is Active with ROHS3 compliance. Gate charge is elevated (36nC at 10V), indicating slower switching compared to the original part.

Alternative Substitute - STL11N3LLH6 (STMicroelectronics): The STL11N3LLH6 DeepGATE™ / STripFET™ VI device provides 11A Tc drain current with 7.5mOhm RDS(on) at 5.5A, 10V. Power dissipation reaches 50W at Tc. The PowerFlat™ (3.3x3.3) package offers thermal performance. This device is Active with ROHS3 compliance. The lower Ta drain current (11A) may limit suitability for applications requiring the full 14A specification.

Compliance and Certification: All substitute parts listed are ROHS3 compliant and REACH unaffected. All devices maintain MSL rating of 1 (Unlimited), ensuring compatibility with standard manufacturing processes. All substitute parts are Active product status, ensuring long-term availability and manufacturing support.

Frequently Asked Questions (FAQ)

Q1: Can FDMS7692 directly replace IRFHM831TRPBF without PCB modification?

The FDMS7692 maintains electrical equivalence but uses an 8-PQFN (5x6) package versus the original PQFN (3x3). PCB footprint verification is required. The larger package dimensions may necessitate layout adjustments. Electrical performance is compatible for equivalent drain current and voltage specifications.

Q2: What is the primary difference between CSD17578Q3A and CSD17578Q3AT?

Both parts are electrically identical NexFET™ devices with 20A Ta drain current and 7.3mOhm RDS(on). The primary difference is inventory availability: CSD17578Q3A has 25200 pcs in stock, while CSD17578Q3AT has 7738 pcs. Both are Active products with identical electrical specifications and ROHS3 compliance.

Q3: Why does CSD17308Q3 have lower gate charge than the original IRFHM831TRPBF?

The CSD17308Q3 gate charge specification is 5.1nC at 4.5V versus 16nC at 10V for the original part. This reflects different measurement conditions and the NexFET™ technology optimization for faster switching. Lower gate charge enables higher switching frequencies with reduced driver power requirements.

Q4: Is RQ3E130BNTB suitable for high-frequency switching applications?

The RQ3E130BNTB has elevated gate charge (36nC at 10V) compared to the original part (16nC at 10V), indicating slower switching characteristics. This device is better suited for lower-frequency applications or where switching speed is not critical. For high-frequency applications, CSD17308Q3 or CSD17578Q3A are preferred due to lower gate charge specifications.

Q5: What are the package compatibility considerations for substitution?

The original IRFHM831TRPBF uses PQFN (3x3). Substitute parts use various packages: FDMS7692 (8-PQFN 5x6), AON6414A (8-DFN 5x6), CSD17308Q3 (8-VSON-CLIP 3.3x3.3), CSD17578Q3A/AT (8-VSONP 3x3.3), RQ3E130BNTB (8-HSMT 3.2x3), and STL11N3LLH6 (PowerFlat 3.3x3.3). PCB layout and thermal management design must accommodate the selected package footprint and thermal characteristics.

Q6: Which substitute part offers the best thermal performance?

STL11N3LLH6 provides the highest power dissipation at Tc (50W), followed by CSD17578Q3A/AT (37W) and AON6414A (31W). However, lower Ta drain current (11A for STL11N3LLH6) may limit application suitability. For applications requiring both 14A Ta current and high thermal performance, CSD17578Q3A or CSD17578Q3AT are optimal choices with 37W Tc capability and 20A Ta rating.

Q7: Are all substitute parts ROHS3 compliant?

All substitute parts listed are ROHS3 compliant. The original IRFHM831TRPBF does not specify RoHS status due to its obsolete classification. All active substitute parts meet current environmental and regulatory requirements for new designs and production.

Q8: What is the significance of MSL rating 1 (Unlimited)?

MSL rating 1 (Unlimited) indicates the device has unlimited shelf life and does not require special moisture control during storage or handling. All parts listed, including the original IRFHM831TRPBF and all substitutes, carry this rating, ensuring compatibility with standard manufacturing processes without specialized moisture-sensitive device (MSD) handling procedures.

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