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IRFHM830TR2PBF N-Channel 30V 21A MOSFET Equivalent & Substitute Parts
Part Overview
The IRFHM830TR2PBF is an N-Channel 30V 21A (Ta), 40A (Tc) surface mount MOSFET manufactured by Infineon Technologies in a 3x3 PQFN package. This device is classified as obsolete product status, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.
The IRFHM830TR2PBF serves in applications requiring low on-resistance switching at 30V drain-source voltage ratings with moderate to high continuous drain current capability. Due to its obsolete status, active alternative MOSFETs with compatible electrical and mechanical parameters are necessary for new designs and production replacements.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 30 | V |
| Continuous Drain Current @ 25°C (Ta) | 21 | A |
| Continuous Drain Current @ 25°C (Tc) | 40 | A |
| Rds On (Max) @ 20A, 10V | 3.8 | mOhm |
| Vgs(th) (Max) @ 50µA | 2.35 | V |
| Gate Charge (Qg) (Max) @ 10V | 31 | nC |
| Input Capacitance (Ciss) (Max) @ 25V | 2155 | pF |
| Mounting Type | Surface Mount | - |
| Package / Case | 8-VQFN Exposed Pad (3x3) | - |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | - |
Substitute Part Grouping Explanation
Substitution of the IRFHM830TR2PBF is determined by strict alignment of the following electrical and mechanical parameters:
Primary Substitution Criteria:
- Drain to Source Voltage (Vdss): 30V (exact match required)
- FET Type: N-Channel (exact match required)
- Technology: MOSFET Metal Oxide (exact match required)
- Continuous Drain Current @ 25°C: minimum 21A (Ta) or equivalent thermal class rating
- Rds On @ 20A, 10V: 3.8 mOhm or lower (lower on-resistance acceptable)
- Gate Charge (Qg) @ 10V: 31 nC or lower (lower gate charge acceptable)
- Mounting Type: Surface Mount (exact match required)
- Moisture Sensitivity Level: 1 (Unlimited) or equivalent
Secondary Compatibility Parameters:
- Vgs(th) threshold voltage: within ±0.5V of 2.35V
- Input Capacitance (Ciss): within ±15% of 2155 pF
- Package form factor: PQFN, WDFN, or PowerTDFN surface mount packages acceptable
Substitute parts must maintain electrical performance within the specified operating envelope while accommodating minor package geometry variations typical of surface mount component families.
Parameter Comparison
| Parameter | IRFHM830TR2PBF (Main) | DMTH3004LPS-13 | FDMS0312AS | NTTFS4965NFTAG |
|---|---|---|---|---|
| Manufacturer | Infineon Technologies | Diodes Incorporated | onsemi | onsemi |
| Product Status | Obsolete | Active | Active | Active |
| Vdss (V) | 30 | 30 | 30 | 30 |
| Id @ 25°C Ta (A) | 21 | 22 | 18 | 16.3 |
| Id @ 25°C Tc (A) | 40 | 145 | 22 | 64 |
| Rds On @ 20A, 10V (mOhm) | 3.8 | 3.8 | 5.0 | 3.5 |
| Vgs(th) @ Id (V) | 2.35 @ 50µA | 3.0 @ 250µA | 3.0 @ 1mA | 2.3 @ 250µA |
| Gate Charge Qg @ 10V (nC) | 31 | 43.7 | 31 | 29.4 |
| Ciss @ Vds (pF) | 2155 @ 25V | 2370 @ 15V | 1815 @ 15V | 2075 @ 15V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 8-VQFN Exposed Pad (3x3) | 8-PowerTDFN | 8-PowerTDFN (5x6) | 8-PowerWDFN (3.3x3.3) |
| MSL | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) | 1 (Unlimited) |
| RoHS Status | - | ROHS3 Compliant | ROHS3 Compliant | ROHS3 Compliant |
| REACH Status | REACH Unaffected | REACH Unaffected | REACH Unaffected | REACH Unaffected |
Engineering Selection Recommendations
DMTH3004LPS-13 (Diodes Incorporated)
The DMTH3004LPS-13 is an active product with 30V Vdss and 22A continuous drain current (Ta), matching the IRFHM830TR2PBF current specification. Rds On is identical at 3.8 mOhm @ 20A, 10V. Gate charge is higher at 43.7 nC versus 31 nC, resulting in increased switching losses. The PowerDI5060-8 package differs from the original 3x3 PQFN, requiring PCB layout modification. This device carries AEC-Q101 automotive qualification and ROHS3 compliance, supporting regulated applications. Suitable for designs where package footprint change is acceptable and automotive-grade reliability is required.
FDMS0312AS (onsemi)
The FDMS0312AS is an active product with 30V Vdss and 18A continuous drain current (Ta), slightly below the IRFHM830TR2PBF 21A specification. Rds On is higher at 5.0 mOhm @ 18A, 10V, increasing conduction losses by approximately 31% relative to the main part. Gate charge matches at 31 nC @ 10V. The 8-PowerTDFN (5x6) package is larger than the original 3x3 PQFN, requiring PCB redesign. ROHS3 compliance and active product status support long-term availability. Suitable for applications where slightly reduced current capacity and higher on-resistance are acceptable, and where the larger package footprint can be accommodated.
NTTFS4965NFTAG (onsemi)
The NTTFS4965NFTAG is an active product with 30V Vdss and 16.3A continuous drain current (Ta), below the IRFHM830TR2PBF 21A specification. Rds On is lower at 3.5 mOhm @ 20A, 10V, providing improved conduction efficiency. Gate charge is lower at 29.4 nC @ 10V, reducing switching losses. The 8-PowerWDFN (3.3x3.3) package is similar in footprint to the original 3x3 PQFN, minimizing PCB layout changes. ROHS3 compliance and active product status ensure regulatory support. Suitable for designs prioritizing low switching losses and minimal package footprint change, where the reduced Ta current rating is within application requirements.
Frequently Asked Questions (FAQ)
Q: Can the IRFHM830TR2PBF be directly replaced with any of these substitute parts without PCB modification?
A: The NTTFS4965NFTAG offers the closest package compatibility with its 8-PowerWDFN (3.3x3.3) form factor, similar to the original 3x3 PQFN. The DMTH3004LPS-13 and FDMS0312AS require PCB layout changes due to different package geometries (PowerDI5060-8 and 8-PowerTDFN respectively). Verify pinout compatibility and thermal pad dimensions before PCB reuse.
Q: What are the key electrical differences between the main part and substitutes?
A: All substitutes maintain the 30V Vdss rating. Continuous drain current (Ta) ranges from 16.3A to 22A, with the DMTH3004LPS-13 and FDMS0312AS closest to the original 21A. Rds On values range from 3.5 to 5.0 mOhm, affecting conduction losses. Gate charge ranges from 29.4 to 43.7 nC, influencing switching speed and driver requirements.
Q: Are all substitute parts suitable for automotive applications?
A: Only the DMTH3004LPS-13 carries AEC-Q101 automotive qualification. The FDMS0312AS and NTTFS4965NFTAG are active products with ROHS3 compliance but lack explicit automotive qualification. Verify application requirements before selection.
Q: How do package differences affect thermal performance?
A: The DMTH3004LPS-13 PowerDI5060-8 package supports 136W (Tc) power dissipation, significantly higher than the original device. The FDMS0312AS 8-PowerTDFN (5x6) supports 36W (Tc). The NTTFS4965NFTAG 8-PowerWDFN (3.3x3.3) has similar footprint to the original but thermal specifications are not provided. Thermal pad design and PCB copper area directly impact actual thermal performance.
Q: What is the impact of higher gate charge on circuit design?
A: The DMTH3004LPS-13 gate charge of 43.7 nC is 41% higher than the original 31 nC. This increases gate driver current requirements and switching transition time. Verify gate driver capability and switching frequency tolerance before substitution. Lower gate charge in the NTTFS4965NFTAG (29.4 nC) reduces driver stress.
Q: Are moisture sensitivity levels equivalent across all parts?
A: All parts including the main device and substitutes are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply uniformly across all options.
Q: What compliance certifications are common to all parts?
A: All parts maintain REACH Unaffected status and EAR99 ECCN classification. The DMTH3004LPS-13, FDMS0312AS, and NTTFS4965NFTAG are ROHS3 compliant. The original IRFHM830TR2PBF RoHS status is not specified in the provided data.
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