IRFHM792TRPBF Equivalent & Substitute Parts

Part Overview

The IRFHM792TRPBF is a dual N-channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 2.3A continuous drain current. This component is configured as a HEXFET® series device in an 8-PQFN (3.3x3.3) surface mount package. The part is currently classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement.

Substiute Parts

IRFHM792TRPBF

Infineon TechnologiesIn Stock: 17284IRFHM792TRPBF Datasheet

Current PartRFQ

SI7922DN-T1-E3

Vishay SiliconixIn Stock: 19248SI7922DN-T1-E3 Datasheet

MFR RecommendedRFQ

SI7922DN-T1-GE3

Vishay SiliconixIn Stock: 9953SI7922DN-T1-GE3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFHM792TRPBF is determined by the following critical electrical and mechanical parameters:

Electrical Compatibility Criteria:

• Dual N-channel MOSFET configuration
• Drain-to-source voltage rating of 100V
• On-resistance (Rds On) of 195 mOhm at specified gate and drain conditions
• Gate threshold voltage (Vgs(th)) within acceptable operating range
• Operating temperature range of -55°C to 150°C

Mechanical Compatibility Criteria:

• Surface mount package type
• Dual MOSFET array configuration
• RoHS3 compliance
• MSL rating of 1 (Unlimited)

The substitute parts SI7922DN-T1-E3 and SI7922DN-T1-GE3 (both Vishay Siliconix TrenchFET® devices) satisfy these criteria through equivalent voltage ratings, matching on-resistance specifications, and compatible thermal operating ranges. Both substitutes are active products with confirmed RoHS3 compliance and unlimited moisture sensitivity ratings.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRFHM792TRPBF is classified as obsolete. Both substitute parts SI7922DN-T1-E3 and SI7922DN-T1-GE3 are active products with confirmed ongoing manufacturing and availability, supporting long-term supply chain continuity.

Compliance and Certification: All three parts maintain ROHS3 compliance and MSL rating of 1 (Unlimited), ensuring compatibility with current manufacturing and environmental standards. SI7922DN-T1-GE3 carries REACH Unaffected status, matching the main part specification. SI7922DN-T1-E3 requires REACH information verification upon request.

Electrical Parameter Alignment: The substitute parts maintain identical voltage ratings (100V Vdss) and on-resistance specifications (195 mOhm @ 10V). The continuous drain current of the substitutes (1.8A) is lower than the main part (2.3A), and maximum power dissipation is reduced (1.3W versus 2.3W). These differences require circuit-level thermal and current capacity analysis for applications operating at or near the main part's rated specifications.

Package Consideration: The main part uses 8-PowerVDFN packaging, while substitutes employ PowerPAK® 1212-8 Dual packaging. Both are surface mount dual MOSFET arrays with different physical footprints. PCB layout modification is required for package substitution.

Frequently Asked Questions (FAQ)

Q: Can SI7922DN-T1-E3 and SI7922DN-T1-GE3 be used interchangeably with IRFHM792TRPBF?

A: Both Vishay substitutes share identical electrical specifications (100V rating, 195 mOhm on-resistance, -55°C to 150°C operating range) and dual N-channel configuration. However, the continuous drain current rating differs (1.8A versus 2.3A), and package geometry is different (PowerPAK® 1212-8 Dual versus 8-PowerVDFN). Substitution is valid only when circuit current requirements do not exceed 1.8A and PCB layout accommodates the different package footprint.

Q: What is the difference between SI7922DN-T1-E3 and SI7922DN-T1-GE3?

A: Both parts are electrically and mechanically identical Vishay Siliconix TrenchFET® devices with matching specifications. The primary difference is REACH compliance status: SI7922DN-T1-GE3 carries REACH Unaffected designation, while SI7922DN-T1-E3 requires REACH information verification. Both are packaged in PowerPAK® 1212-8 Dual and are active products.

Q: Why is the continuous drain current lower in the substitute parts?

A: The SI7922DN-T1-E3 and SI7922DN-T1-GE3 are rated for 1.8A continuous drain current compared to the IRFHM792TRPBF's 2.3A. This reflects different thermal design and package thermal performance characteristics. Applications requiring sustained currents above 1.8A must evaluate thermal management and may require alternative solutions.

Q: Are package changes required for substitution?

A: Yes. The IRFHM792TRPBF uses 8-PowerVDFN packaging, while both substitute parts use PowerPAK® 1212-8 Dual packaging. These packages have different physical dimensions and pin configurations. PCB redesign is necessary to accommodate the new package footprint and pinout.

Q: Do all three parts meet current environmental and compliance standards?

A: All three parts are ROHS3 compliant with MSL rating of 1 (Unlimited). SI7922DN-T1-GE3 carries REACH Unaffected status matching the main part. SI7922DN-T1-E3 requires REACH information verification. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code.