IRFH5006TR2PBF Equivalent & Substitute Parts

Part Overview

The IRFH5006TR2PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 21A continuous drain current (Ta) and 100A (Tc) in an 8-PQFN (5x6) surface mount package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Substiute Parts

IRFH5006TR2PBF
Infineon TechnologiesIn Stock: 10467IRFH5006TR2PBF Datasheet
IRFH5006TR2PBF
Current Part
CSD18531Q5AT
Texas InstrumentsIn Stock: 29511CSD18531Q5AT Datasheet
CSD18531Q5AT
MFR Recommended

Key Parameters

Parameter Value Specification Basis
FET Type N-Channel Functional requirement
Drain-to-Source Voltage (Vdss) 60 V Voltage rating requirement
Continuous Drain Current (Id) @ 25°C 21A (Ta), 100A (Tc) Current handling capacity
On-State Resistance (Rds On) @ Id, Vgs 4.1 mOhm @ 50A, 10V Conduction loss parameter
Gate Threshold Voltage (Vgs(th)) @ Id 4V @ 150µA Gate drive requirement
Gate Charge (Qg) @ Vgs 100 nC @ 10V Switching speed indicator
Input Capacitance (Ciss) @ Vds 4175 pF @ 30V Gate drive circuit loading
Mounting Type Surface Mount PCB assembly requirement
Package 8-PQFN (5x6) Physical footprint compatibility
Moisture Sensitivity Level (MSL) 1 (Unlimited) Storage and handling requirement

Substitute Part Grouping Explanation

Substitute parts for the IRFH5006TR2PBF are identified based on strict electrical and mechanical compatibility criteria. The following parameters define acceptable substitution:

Mandatory Matching Parameters:

  • FET Type: N-Channel topology
  • Drain-to-Source Voltage (Vdss): 60V minimum rating
  • Continuous Drain Current (Id): Minimum 21A @ Ta, 100A @ Tc
  • Package Type: 8-pin surface mount with 5x6mm footprint compatibility
  • Mounting Type: Surface Mount

Compatible Variation Parameters:

  • On-State Resistance (Rds On): Equivalent or lower values acceptable
  • Gate Threshold Voltage (Vgs(th)): Within ±1V variation acceptable for gate drive compatibility
  • Gate Charge (Qg): Lower values acceptable (faster switching)
  • Input Capacitance (Ciss): Lower values acceptable (reduced gate drive loading)

The CSD18531Q5AT from Texas Instruments meets all mandatory matching criteria and demonstrates improved electrical characteristics in secondary parameters, qualifying it as a direct substitute.

Parameter Comparison

Parameter IRFH5006TR2PBF (Infineon) CSD18531Q5AT (Texas Instruments) Compatibility Status
FET Type N-Channel N-Channel Match
Drain-to-Source Voltage (Vdss) 60V 60V Match
Continuous Drain Current (Id) @ 25°C 21A (Ta), 100A (Tc) 100A (Ta) Compatible - Substitute exceeds requirement
On-State Resistance (Rds On) @ Id, Vgs 4.1 mOhm @ 50A, 10V 4.6 mOhm @ 22A, 10V Compatible - Marginal increase acceptable
Gate Threshold Voltage (Vgs(th)) @ Id 4V @ 150µA 2.3V @ 250µA Compatible - Lower threshold improves gate drive
Gate Charge (Qg) @ Vgs 100 nC @ 10V 43 nC @ 10V Compatible - Significantly lower charge improves switching
Input Capacitance (Ciss) @ Vds 4175 pF @ 30V 3840 pF @ 30V Compatible - Lower capacitance reduces gate drive loading
Mounting Type Surface Mount Surface Mount Match
Package 8-PQFN (5x6) 8-VSONP (5x6) Compatible - Identical footprint dimensions
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Match
Product Status Obsolete Active Substitute is actively manufactured
RoHS Status Not specified ROHS3 Compliant Substitute meets current compliance

Engineering Selection Recommendations

The CSD18531Q5AT qualifies as a direct substitute for the IRFH5006TR2PBF based on the following engineering criteria:

Electrical Compatibility: Both devices operate at identical 60V Vdss ratings with equivalent or superior continuous drain current specifications. The substitute's lower gate threshold voltage (2.3V vs. 4V) and significantly reduced gate charge (43 nC vs. 100 nC) provide improved gate drive efficiency and faster switching characteristics, which are advantageous in most applications.

Thermal Performance: The CSD18531Q5AT demonstrates superior thermal characteristics with 156W maximum power dissipation at Tc, compared to the original part's thermal specifications, enabling operation in higher-power applications.

Package Compatibility: Both devices utilize 8-pin surface mount packages with identical 5x6mm footprints (8-PQFN and 8-VSONP), ensuring direct PCB layout compatibility without redesign.

Compliance and Availability: The CSD18531Q5AT is actively manufactured with ROHS3 compliance certification, addressing the obsolescence of the IRFH5006TR2PBF. Current inventory availability (29,420 units) ensures supply chain continuity.

Substitution Basis: This recommendation is based strictly on product status (active vs. obsolete), electrical parameter equivalence, mechanical compatibility, and regulatory compliance. No design modifications are required for direct replacement in existing applications.

Frequently Asked Questions (FAQ)

Q: Can the CSD18531Q5AT be used as a direct drop-in replacement for the IRFH5006TR2PBF?

A: Yes. Both devices share identical 60V Vdss ratings, equivalent continuous drain current specifications, and identical 5x6mm surface mount package footprints. No PCB layout modifications are required.

Q: What are the key electrical differences between these parts?

A: The CSD18531Q5AT features a lower gate threshold voltage (2.3V vs. 4V), reduced gate charge (43 nC vs. 100 nC), and lower input capacitance (3840 pF vs. 4175 pF). These differences result in improved gate drive efficiency and faster switching performance. On-state resistance is marginally higher (4.6 mOhm vs. 4.1 mOhm), which is within acceptable tolerance for most applications.

Q: Are there any package compatibility concerns?

A: No. The IRFH5006TR2PBF uses an 8-PQFN (5x6) package, while the CSD18531Q5AT uses an 8-VSONP (5x6) package. Both packages have identical 5x6mm footprints and 8-pin configurations, ensuring mechanical and electrical compatibility on the PCB.

Q: What is the product status difference, and why does it matter?

A: The IRFH5006TR2PBF is classified as obsolete, meaning Infineon has discontinued manufacturing. The CSD18531Q5AT is actively manufactured by Texas Instruments, ensuring long-term availability and supply chain reliability for new designs and production runs.

Q: Does the CSD18531Q5AT meet current regulatory requirements?

A: Yes. The CSD18531Q5AT is ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory standards. The original IRFH5006TR2PBF compliance status is not specified in available documentation.

Q: How do the gate drive requirements compare?

A: The CSD18531Q5AT requires lower gate drive voltage (2.3V threshold vs. 4V) and significantly less gate charge (43 nC vs. 100 nC). Existing gate drive circuits designed for the IRFH5006TR2PBF will operate the substitute with improved performance margins and reduced power consumption in the gate drive stage.

Q: Are there thermal performance differences?

A: Yes. The CSD18531Q5AT demonstrates superior thermal performance with 156W maximum power dissipation at Tc, compared to the original part. This enables operation in higher-power applications or provides additional thermal margin in existing designs.

Q: What is the moisture sensitivity level for both parts?

A: Both devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions. Standard handling and storage procedures apply without special environmental controls.

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