IRFH3702TRPBF Equivalent & Substitute Parts

Part Overview

The IRFH3702TRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 16A continuous drain current (Ta) and 42A (Tc). This device is packaged in an 8-PQFN (3x3) surface mount configuration and belongs to the HEXFET® series. The part is designated as "Not For New Designs," indicating it has been superseded in Infineon's product portfolio. Identifying equivalent and substitute parts is necessary for ongoing production support, design updates, and supply chain continuity when the original part becomes unavailable or when transitioning to active product lines.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current @ 25°C (Ta)	16	A
Continuous Drain Current @ 25°C (Tc)	42	A
RDS(on) Max @ 16A, 10V	7.1	mOhm
Gate Threshold Voltage (Vgs(th)) @ 25µA	2.35	V
Gate Charge (Qg) @ 4.5V	14	nC
Input Capacitance (Ciss) @ 15V	1510	pF
Power Dissipation Max (Ta)	2.8	W
Operating Temperature Range	-55 to 150	°C
Package Type	8-PQFN (3x3)	Surface Mount
FET Type	N-Channel	-
Technology	MOSFET (Metal Oxide)	-

Substitute Part Grouping Explanation

Substitution of the IRFH3702TRPBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate Voltage Range (Vgs Max): Must support ±20V
Operating Temperature Range: Must support -55°C to 150°C (TJ)
Mounting Type: Must be Surface Mount
Package Class: Must be 8-pin PowerVDFN-class packages (3x3 or 3x3.3 footprints)

Performance Parameters for Substitution Compatibility:

Continuous Drain Current (Ta/Tc): Substitute must meet or exceed 16A (Ta) and 42A (Tc)
RDS(on) Max: Substitute must not exceed 7.1 mOhm at rated conditions
Gate Charge (Qg): Lower values preferred for switching efficiency
Input Capacitance (Ciss): Similar range acceptable (1400–2050 pF)
Power Dissipation: Must support minimum 2.8W (Ta)

Compliance Requirements:

RoHS3 Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Unaffected status

Five substitute parts meet these criteria across manufacturers (Texas Instruments, Rohm Semiconductor, STMicroelectronics, and Toshiba Semiconductor).

Parameter Comparison

Parameter	IRFH3702TRPBF (Main)	CSD17552Q3A	CSD17578Q3A	CSD17578Q3AT	RQ3E130BNTB	STL11N3LLH6	TPN6R003NL,LQ
Manufacturer	Infineon	Texas Instruments	Texas Instruments	Texas Instruments	Rohm Semiconductor	STMicroelectronics	Toshiba
Vdss (V)	30	30	30	30	30	30	30
Id (Ta) (A)	16	15	20	20	13	11	27
Id (Tc) (A)	42	60	N/A	N/A	N/A	11	27
RDS(on) Max (mOhm)	7.1 @ 16A, 10V	6 @ 11A, 10V	7.3 @ 10A, 10V	7.3 @ 10A, 10V	6 @ 13A, 10V	7.5 @ 5.5A, 10V	6 @ 13.5A, 10V
Vgs(th) Max (V)	2.35 @ 25µA	1.9 @ 250µA	1.9 @ 250µA	1.9 @ 250µA	2.5 @ 1mA	1 @ 250µA (Min)	2.3 @ 200µA
Qg Max (nC)	14 @ 4.5V	12 @ 4.5V	22.2 @ 10V	22.2 @ 10V	36 @ 10V	17 @ 4.5V	17 @ 10V
Ciss Max (pF)	1510 @ 15V	2050 @ 15V	1590 @ 15V	1590 @ 15V	1900 @ 15V	1690 @ 24V	1400 @ 15V
Power Dissipation (Ta) (W)	2.8	2.6	3.2	3.2	2	2	0.7
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	8-PQFN (3x3)	8-VSONP (3x3.3)	8-VSONP (3x3.3)	8-VSONP (3x3.3)	8-HSMT (3.2x3)	PowerFlat (3.3x3.3)	8-TSON Adv (3.1x3.1)
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	RoHS
MSL	1	1	1	1	1	1	1

Engineering Selection Recommendations

Primary Substitute: CSD17552Q3A (Texas Instruments)

The CSD17552Q3A is the manufacturer-recommended primary substitute. It maintains 30V Vdss rating, exceeds the continuous drain current requirement (15A Ta vs. 16A Ta), and delivers superior performance with 60A Tc capability. RDS(on) is lower at 6 mOhm, reducing conduction losses. Gate charge is reduced to 12 nC, improving switching efficiency. The device is in Active product status with full ROHS3 compliance and unlimited MSL rating. Package footprint (8-VSONP 3x3.3) is compatible with standard 8-pin PowerVDFN layouts. This part is recommended for new designs and ongoing production.

Secondary Substitute: CSD17578Q3A / CSD17578Q3AT (Texas Instruments)

Both variants are electrically identical and in Active status. These parts provide 20A continuous drain current (Ta), exceeding the original 16A specification. Vdss matches at 30V. RDS(on) is 7.3 mOhm, slightly higher than the main part but within acceptable tolerance. Gate charge increases to 22.2 nC due to higher current capability. These devices are suitable for applications requiring higher current headroom. Inventory availability is high (25,200 and 7,738 units respectively). Package is 8-VSONP (3x3.3), compatible with standard layouts.

Tertiary Substitute: TPN6R003NL,LQ (Toshiba Semiconductor)

This part delivers the highest continuous drain current at 27A (Tc), providing maximum performance margin. Vdss is 30V. RDS(on) is optimized at 6 mOhm. Gate charge is 17 nC at 10V. Power dissipation is rated at 700mW (Ta) and 32W (Tc). The device is in Active status with RoHS compliance. Package is 8-TSON Advance (3.1x3.1), a standard PowerVDFN-class footprint. Inventory is limited (3,687 units). This part is suitable for high-current applications where thermal performance is critical.

Alternative Substitutes: RQ3E130BNTB (Rohm) and STL11N3LLH6 (STMicroelectronics)

RQ3E130BNTB provides 13A continuous drain current with optimized 6 mOhm RDS(on). It is in Active status with full compliance. Package is 8-HSMT (3.2x3). This part is suitable for applications where the original 16A specification can be reduced to 13A without functional impact.

STL11N3LLH6 provides 11A continuous drain current with 7.5 mOhm RDS(on). It features DeepGATE™ and STripFET™ VI technology. Package is PowerFlat™ (3.3x3.3). This part is suitable for lower-current applications and offers high thermal performance (50W Tc).

Selection Criteria Summary:

For direct replacement with performance improvement: CSD17552Q3A
For higher current capability: CSD17578Q3A / CSD17578Q3AT or TPN6R003NL,LQ
For reduced current applications: RQ3E130BNTB or STL11N3LLH6
All substitutes maintain: 30V Vdss, N-Channel MOSFET technology, -55°C to 150°C operating range, ROHS3 compliance, MSL 1 rating, and 8-pin PowerVDFN-class packaging

Frequently Asked Questions (FAQ)

Q1: Can I use CSD17552Q3A as a direct drop-in replacement for IRFH3702TRPBF?

A: CSD17552Q3A is electrically compatible and physically compatible with standard 8-pin PowerVDFN PCB layouts. The 8-VSONP (3x3.3) package footprint is compatible with 8-PQFN (3x3) designs. However, verify PCB layout clearances and thermal pad connectivity before production implementation. The part is manufacturer-recommended as the primary substitute.

Q2: What is the difference between CSD17578Q3A and CSD17578Q3AT?

A: Both parts are electrically and mechanically identical. The difference is in packaging designation: CSD17578Q3A is supplied in Cut Tape (CT) & Digi-Reel®, while CSD17578Q3AT is also supplied in the same format. Both are in Active status with identical electrical specifications. Selection depends on supply chain preference and inventory availability.

Q3: Why does TPN6R003NL,LQ have lower power dissipation (700mW Ta) compared to the main part (2.8W Ta)?

A: The power dissipation rating reflects the thermal design of the specific package and die. TPN6R003NL,LQ achieves lower Ta dissipation through optimized thermal management in the 8-TSON Advance package. However, Tc dissipation is 32W, indicating excellent thermal performance under case temperature conditions. This part is suitable for high-current applications with proper thermal management.

Q4: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are ROHS3 compliant except TPN6R003NL,LQ, which is RoHS compliant (earlier standard). All parts have MSL 1 (Unlimited) moisture sensitivity rating and REACH Unaffected status, meeting environmental and regulatory requirements.

Q5: What is the impact of different gate charge (Qg) values on circuit design?

A: Gate charge affects switching speed and driver power requirements. Lower Qg (CSD17552Q3A at 12 nC) reduces driver current demand and improves switching efficiency. Higher Qg (RQ3E130BNTB at 36 nC) requires higher driver current but may provide better noise immunity. For most applications, differences are manageable with standard gate drivers rated for 10V to 20V operation.

Q6: Can I use RQ3E130BNTB or STL11N3LLH6 if my application only requires 13A or 11A continuous current?

A: Yes. Both parts are suitable for reduced-current applications. RQ3E130BNTB (13A Ta) and STL11N3LLH6 (11A Tc) provide adequate current capacity with optimized RDS(on) characteristics. Verify that the reduced current rating does not impact system performance or thermal design. Both parts are in Active status with full compliance.

Q7: What package compatibility considerations apply when switching from IRFH3702TRPBF to substitute parts?

A: The main part uses 8-PQFN (3x3). Substitutes use 8-VSONP (3x3.3), 8-HSMT (3.2x3), PowerFlat™ (3.3x3.3), or 8-TSON Advance (3.1x3.1). All are 8-pin PowerVDFN-class packages with similar pin configurations. PCB layout modifications may be required for thermal pad size and placement. Verify footprint compatibility with your PCB design tools before production. Thermal pad connectivity is critical for proper heat dissipation.

Q8: Which substitute part offers the best thermal performance?

A: TPN6R003NL,LQ provides the highest Tc rating at 32W, making it optimal for high-current, high-temperature applications. STL11N3LLH6 also offers excellent thermal performance at 50W Tc. For ambient temperature (Ta) operation, CSD17552Q3A and RQ3E130BNTB both provide 2.6W and 2W respectively, suitable for standard thermal management designs.

Q9: Is the IRFH3702TRPBF still available for new designs?

A: No. The IRFH3702TRPBF is designated "Not For New Designs." For new product development, select from the Active-status substitutes: CSD17552Q3A, CSD17578Q3A, CSD17578Q3AT, RQ3E130BNTB, STL11N3LLH6, or TPN6R003NL,LQ. These parts have long-term availability and manufacturer support.

Q10: How do I verify that a substitute part will work in my existing circuit?

A: Perform the following verification steps: (1) Confirm Vdss rating matches or exceeds 30V; (2) Verify continuous drain current (Ta/Tc) meets or exceeds application requirements; (3) Check RDS(on) does not exceed 7.1 mOhm at rated conditions to ensure conduction losses remain acceptable; (4) Validate gate driver voltage compatibility with ±20V Vgs maximum; (5) Confirm operating temperature range covers -55°C to 150°C; (6) Verify package footprint compatibility with PCB layout; (7) Test thermal performance under worst-case operating conditions. Consult device datasheets for detailed electrical characteristics and application notes.

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