IRFDC20 N-Channel MOSFET 600V 320mA Equivalent & Substitute Parts

Part Overview

The IRFDC20 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 600V drain-to-source voltage with a continuous drain current of 320mA at 25°C. This device is packaged in a 4-HVMDIP through-hole configuration and is designed for general-purpose switching applications requiring high voltage capability in compact form factors.

The IRFDC20 is classified as an obsolete product. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and legacy system requirements where this component remains in active service. Substitute parts must maintain identical electrical specifications and mechanical compatibility to ensure direct replacement without circuit redesign.

Substiute Parts

IRFDC20

Vishay SiliconixIn Stock: 923IRFDC20 Datasheet

Current PartRFQ

IRFDC20PBF

Vishay SiliconixIn Stock: 6990IRFDC20PBF Datasheet

Parametric EquivalentRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFDC20 are identified based on strict parametric equivalence across all critical electrical and mechanical specifications. The substitution logic is based on the following key parameters:

Electrical Specifications (Must Match Exactly):

• Drain to Source Voltage (Vdss): 600V
• Continuous Drain Current (Id) @ 25°C: 320mA
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
• On-State Drain Resistance (Rds On): 4.4 Ohm @ 190mA, 10V
• Gate Charge (Qg): 18 nC @ 10V
• Maximum Gate Voltage (Vgs): ±20V
• Input Capacitance (Ciss): 350 pF @ 25V
• Power Dissipation: 1W
• Operating Temperature Range: -55°C to 150°C

Mechanical Specifications (Must Match Exactly):

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-HVMDIP

Parts meeting all of these criteria are classified as parametric equivalents and direct substitutes. Variations in product status, packaging format (tube vs. bulk), or compliance certifications do not affect electrical or mechanical compatibility.

Parameter Comparison

Engineering Selection Recommendations

IRFDC20PBF as Direct Substitute:

The IRFDC20PBF is a parametric equivalent to the IRFDC20 and functions as a direct substitute. All electrical specifications, mechanical dimensions, and pin configurations are identical. The IRFDC20PBF is manufactured by the same supplier (Vishay Siliconix) and shares the same base product number.

Advantages of IRFDC20PBF:

• Active product status ensures ongoing availability and supply chain support
• ROHS3 compliance meets current environmental and regulatory requirements
• Identical electrical performance across all rated parameters
• Through-hole 4-DIP package maintains mechanical compatibility with existing PCB layouts
• Tube packaging format is standard for active production components

Compliance Considerations: The IRFDC20 is classified as RoHS non-compliant, while the IRFDC20PBF is ROHS3 compliant. Both parts are REACH unaffected and carry the same ECCN (EAR99) and HTSUS (8541.29.0095) classifications. Selection of the IRFDC20PBF is recommended for applications subject to RoHS compliance requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRFDC20PBF be used as a direct replacement for the IRFDC20?

A: Yes. The IRFDC20PBF is a parametric equivalent with identical electrical specifications and mechanical compatibility. All drain-to-source voltage, drain current, on-state resistance, gate charge, and thermal characteristics match exactly. The 4-DIP through-hole package dimensions are identical, enabling direct PCB substitution without layout modifications.

Q: What is the difference between IRFDC20 and IRFDC20PBF?

A: The primary differences are product status and compliance certification. The IRFDC20 is obsolete and RoHS non-compliant, while the IRFDC20PBF is an active product with ROHS3 compliance. Packaging format differs (IRFDC20PBF is supplied in tube format), but electrical performance and physical pin configuration are identical.

Q: Are there any thermal or electrical performance differences between these parts?

A: No. Both parts share identical maximum power dissipation (1W), operating temperature range (-55°C to 150°C), and all electrical parameters including Rds On, gate threshold voltage, and gate charge. Performance in switching applications is equivalent.

Q: Will the IRFDC20PBF fit in existing PCB footprints designed for the IRFDC20?

A: Yes. Both devices use the 4-DIP (0.300", 7.62mm) package with 4-HVMDIP supplier designation. Pin spacing, lead diameter, and overall package dimensions are identical. No PCB redesign or footprint modification is required.

Q: Is the IRFDC20PBF suitable for new designs?

A: Yes. The IRFDC20PBF is an active product with current manufacturing support. It is the recommended choice for new applications requiring a 600V, 320mA N-Channel MOSFET in a through-hole 4-DIP package. ROHS3 compliance makes it suitable for applications subject to environmental regulations.

Q: What is the significance of the "PBF" suffix in IRFDC20PBF?

A: The "PBF" suffix indicates lead-free (Pb-free) construction and ROHS3 compliance. This designation distinguishes the part from legacy versions that may contain lead-based solder or other restricted substances.

Q: Can I use IRFDC20PBF in legacy equipment originally designed for IRFDC20?

A: Yes. The IRFDC20PBF is electrically and mechanically equivalent to the IRFDC20. It functions identically in all circuit applications and is suitable for repair and maintenance of legacy systems.