IRFD9020 Equivalent & Substitute Parts Reference

Part Overview

The IRFD9020, manufactured by Vishay Siliconix, is a P-Channel MOSFET in the transistors, FETs, MOSFETs category. It features a drain-to-source voltage of 60V, continuous drain current of 1.6A, and is housed in a 4-DIP (0.300", 7.62mm) through-hole package. The IRFD9020 is currently classified as obsolete, making the identification of equivalent and substitute models necessary to maintain ongoing production and design requirements where this part was specified.

Key Parameters

Parameter	Value
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 960mA, 10V
Vgs(th) (Max) @ Id	4V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 25 V
Power Dissipation (Max)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)

Substitute Part Grouping Explanation

Substitute selection is strictly based on identical electrical and mechanical parameters, including FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), drive voltage, maximum Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), maximum Vgs, input capacitance, power dissipation, operating temperature, mounting type, and package size. The substitute part IRFD9020PBF matches all these parameters, qualifying as a direct replacement in form, fit, and function.

Parameter Comparison

Parameter	IRFD9020	IRFD9020PBF
FET Type	P-Channel	P-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	60 V
Current - Continuous Drain (Id) @ 25°C	1.6A (Ta)	1.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	10V
Rds On (Max) @ Id, Vgs	280mOhm @ 960mA, 10V	280mOhm @ 960mA, 10V
Vgs(th) (Max) @ Id	4V @ 1µA	4V @ 1µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V	19 nC @ 10 V
Vgs (Max)	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	570 pF @ 25 V	570 pF @ 25 V
Power Dissipation (Max)	1.3W (Ta)	1.3W (Ta)
Operating Temperature	-55°C ~ 175°C (TJ)	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole	Through Hole
Supplier Device Package	4-HVMDIP	4-HVMDIP
Package / Case	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)
RoHS Status	RoHS non-compliant	ROHS3 Compliant
Product Status	Obsolete	Active

Engineering Selection Recommendations

The IRFD9020 is an obsolete P-Channel MOSFET with RoHS non-compliant status. IRFD9020PBF is an active, ROHS3 compliant substitute with matching electrical and mechanical specifications. For applications requiring environmental compliance or ongoing supply, IRFD9020PBF fulfills these requirements within the specified parameters and certifications provided.

Frequently Asked Questions (FAQ)

Q1: What electrical parameters are essential for substituting IRFD9020 in a design?
A: Substitute selection for IRFD9020 requires matching FET type, technology, drain to source voltage (Vdss), continuous drain current (Id), maximum Rds On, gate threshold voltage (Vgs(th)), gate charge (Qg), drive voltage, input capacitance, and power dissipation.

Q2: Is mounting type and package size relevant for direct substitution?
A: Yes, direct substitution requires identical mounting type and package size. Both IRFD9020 and IRFD9020PBF use a 4-DIP (0.300", 7.62mm) through-hole package.

Q3: Are there differences in compliance or product status between IRFD9020 and IRFD9020PBF?
A: IRFD9020 is obsolete and RoHS non-compliant. IRFD9020PBF is active and ROHS3 compliant.

Q4: Does the substitution affect performance with respect to supplied parameters?
A: IRFD9020PBF matches all supplied electrical and mechanical parameters of IRFD9020.

Q5: What should be verified when considering a substitute MOSFET in this category?
A: Only electrical parameters, mounting type, and package size explicitly provided should be matched for compatibility. RoHS and product status can be considered per project requirements.

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