IRFD420 N-Channel MOSFET 500V 370mA Equivalent & Substitute Parts

Part Overview

The IRFD420 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 500V drain-to-source voltage with a continuous drain current of 370mA at 25°C. The device is housed in a 4-HVMDIP through-hole package and is designed for general-purpose switching applications requiring high voltage capability in compact form factors.

The IRFD420 is classified as obsolete. Locating direct replacements from current manufacturing inventory is necessary for new designs, production restocking, and field service applications. Substitute parts must maintain electrical equivalence across all critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal specifications.

Substiute Parts

IRFD420

Vishay SiliconixIn Stock: 2503IRFD420 Datasheet

Current PartRFQ

IRFD420PBF

Vishay SiliconixIn Stock: 2716IRFD420PBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFD420 is determined by strict electrical and mechanical equivalence across the following critical parameters:

Electrical Equivalence Criteria:

• Drain-to-Source Voltage (Vdss) must equal 500 V
• Continuous Drain Current (Id) must equal or exceed 370 mA at 25°C
• On-Resistance (Rds On) must not exceed 3 Ω at specified conditions
• Gate Threshold Voltage (Vgs(th)) must not exceed 4 V at 250 µA
• Gate Charge (Qg) must not exceed 24 nC at 10 V
• Maximum Gate Voltage (Vgs) must accommodate ±20 V
• Input Capacitance (Ciss) must not exceed 360 pF at 25 V
• Power Dissipation capability must equal or exceed 1 W at Ta
• Operating Temperature range must span -55°C to 150°C (TJ)

Mechanical Equivalence Criteria:

• Mounting type must be Through Hole
• Package must be 4-DIP with 0.300" (7.62 mm) pitch
• Supplier Device Package must be 4-HVMDIP

Substitute parts meeting all electrical and mechanical parameters are classified as direct equivalents and are interchangeable in circuit applications without modification to PCB layout, component footprint, or electrical design.

Parameter Comparison

Engineering Selection Recommendations

The IRFD420PBF is a direct electrical and mechanical equivalent to the IRFD420. All critical electrical parameters—including voltage rating, current capacity, on-resistance, gate characteristics, and thermal specifications—are identical. Both devices are housed in the same 4-HVMDIP through-hole package with identical pin configuration and PCB footprint.

The primary distinction between the two parts is product status and regulatory compliance. The IRFD420 is classified as obsolete and carries RoHS non-compliant status. The IRFD420PBF is an active product with ROHS3 compliance, making it suitable for new designs and applications subject to RoHS regulations.

For applications requiring an active, currently manufactured equivalent with identical electrical performance and regulatory compliance, the IRFD420PBF is the appropriate selection. No circuit modifications, PCB layout changes, or design alterations are required when substituting the IRFD420PBF for the IRFD420.

Frequently Asked Questions (FAQ)

Q: Can the IRFD420PBF be used as a direct replacement for the IRFD420?

A: Yes. The IRFD420PBF is electrically and mechanically equivalent to the IRFD420. All electrical parameters—voltage rating, current capacity, on-resistance, gate characteristics, and thermal specifications—are identical. The devices share the same 4-HVMDIP through-hole package with identical pin configuration. No circuit modifications or PCB layout changes are required.

Q: What is the difference between the IRFD420 and IRFD420PBF?

A: The IRFD420 is an obsolete product with RoHS non-compliant status. The IRFD420PBF is an active product manufactured by Vishay Siliconix with ROHS3 compliance. Electrical and mechanical specifications are identical between the two parts.

Q: Are there any package or pinout differences between these parts?

A: No. Both the IRFD420 and IRFD420PBF use the 4-HVMDIP through-hole package with a 0.300" (7.62 mm) pitch. Pin configuration and PCB footprint are identical.

Q: What are the key electrical parameters that define substitution for this MOSFET?

A: Substitution is determined by equivalence across Drain-to-Source Voltage (500 V), Continuous Drain Current (370 mA at 25°C), On-Resistance (3 Ω maximum), Gate Threshold Voltage (4 V maximum), Gate Charge (24 nC maximum), Gate Voltage rating (±20 V), Input Capacitance (360 pF maximum), Power Dissipation (1 W), and Operating Temperature range (-55°C to 150°C junction temperature).

Q: Is the IRFD420PBF suitable for new designs?

A: Yes. The IRFD420PBF is an active product with ROHS3 compliance, making it appropriate for new designs and applications subject to RoHS regulations. The part is currently manufactured and available in production quantities.

Q: What mounting considerations apply to these devices?

A: Both the IRFD420 and IRFD420PBF are through-hole mounted devices in 4-DIP packages. They require PCB holes with 0.300" (7.62 mm) pitch spacing and are suitable for wave soldering, hand soldering, or selective soldering processes. No surface-mount compatibility exists for these parts.