IRFD320 Equivalent & Substitute Parts

Part Overview

The IRFD320 is an N-Channel MOSFET rated for 400V drain-to-source voltage with a continuous drain current of 490mA and 1W power dissipation in a through-hole 4-DIP package. This device is classified as obsolete, which necessitates identification of active equivalent parts for ongoing design support and procurement continuity. The IRFD320 series provides switching capability for applications requiring moderate voltage and current handling in compact through-hole form factors.

Substiute Parts

IRFD320
Vishay SiliconixIn Stock: 20202IRFD320 Datasheet
IRFD320
Current Part
IRFD320PBF
Vishay SiliconixIn Stock: 2995IRFD320PBF Datasheet
IRFD320PBF
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V
Continuous Drain Current (Id) @ 25°C 490 mA
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.8 Ω @ 210mA, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 410 pF @ 25V
Power Dissipation (Max) 1 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP

Substitute Part Grouping Explanation

Substitution of the IRFD320 is determined by electrical and mechanical parameter equivalence across the following criteria:

Electrical Parameters (Critical for Functional Equivalence):

  • Drain-to-source voltage rating (Vdss): 400V
  • Continuous drain current (Id): 490mA
  • On-state resistance (Rds On): 1.8Ω @ 210mA, 10V
  • Gate threshold voltage (Vgs(th)): 4V @ 250µA
  • Gate charge (Qg): 20nC @ 10V
  • Maximum gate-source voltage (Vgs): ±20V
  • Input capacitance (Ciss): 410pF @ 25V
  • Power dissipation: 1W

Mechanical Parameters (Critical for Physical Compatibility):

  • Mounting type: Through Hole
  • Package designation: 4-DIP (0.300", 7.62mm)
  • Supplier device package: 4-HVMDIP

Compliance Parameters:

  • RoHS status
  • REACH status
  • Moisture sensitivity level (MSL)

Parts meeting all electrical and mechanical parameters are classified as parametric equivalents. Differences in product status (obsolete versus active) and packaging format (bulk versus tube) do not affect electrical or mechanical compatibility.

Parameter Comparison

Parameter IRFD320 IRFD320PBF Unit
Manufacturer Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 400 V
Continuous Drain Current (Id) @ 25°C 490 490 mA
Drive Voltage (Max Rds On) 10 10 V
Rds On (Max) @ Id, Vgs 1.8 @ 210mA, 10V 1.8 @ 210mA, 10V Ω
Vgs(th) (Max) @ Id 4 @ 250µA 4 @ 250µA V
Gate Charge (Qg) (Max) @ Vgs 20 @ 10V 20 @ 10V nC
Vgs (Max) ±20 ±20 V
Input Capacitance (Ciss) (Max) @ Vds 410 @ 25V 410 @ 25V pF
Power Dissipation (Max) 1 1 W
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP 4-HVMDIP
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
REACH Status REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

The IRFD320PBF is a parametric equivalent to the IRFD320 across all electrical and mechanical specifications. Selection between these parts is determined by the following factors:

Product Status Consideration: The IRFD320 is classified as obsolete, while the IRFD320PBF maintains active product status. For new designs and ongoing procurement, the IRFD320PBF is the appropriate selection to ensure supply chain continuity and manufacturer support.

Compliance Consideration: The IRFD320PBF carries ROHS3 compliance certification, whereas the IRFD320 is RoHS non-compliant. Applications subject to RoHS regulatory requirements must use the IRFD320PBF. Both parts maintain REACH Unaffected status and MSL Level 1 (Unlimited) moisture sensitivity rating.

Packaging Format: The IRFD320PBF is supplied in tube packaging, while the IRFD320 is supplied in bulk format. This difference affects procurement and handling procedures but does not impact electrical or mechanical compatibility in circuit applications.

Electrical and Mechanical Compatibility: All electrical parameters, including voltage rating, current rating, on-state resistance, gate characteristics, and thermal specifications, are identical between the two parts. The 4-DIP through-hole package and 4-HVMDIP supplier designation are identical, ensuring direct pin-for-pin and footprint compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRFD320PBF be used as a direct replacement for IRFD320 in existing designs?

A: Yes. The IRFD320PBF is electrically and mechanically equivalent to the IRFD320. All electrical parameters, including voltage rating (400V), current rating (490mA), on-state resistance (1.8Ω), and thermal specifications are identical. The through-hole 4-DIP package dimensions and pinout are identical, enabling direct substitution without circuit modification.

Q: What is the primary reason to transition from IRFD320 to IRFD320PBF?

A: The IRFD320 is classified as obsolete, creating supply chain risk for ongoing production and maintenance. The IRFD320PBF maintains active product status with current manufacturer support and availability. Additionally, the IRFD320PBF carries ROHS3 compliance certification, which is required for applications subject to RoHS regulatory requirements.

Q: Are there differences in thermal performance between IRFD320 and IRFD320PBF?

A: No. Both parts have identical power dissipation ratings (1W maximum) and operating temperature ranges (-55°C to 150°C junction temperature). Thermal performance in circuit applications is determined by identical electrical characteristics and package thermal properties.

Q: Does the tube packaging of IRFD320PBF affect circuit performance compared to bulk IRFD320?

A: No. Packaging format (tube versus bulk) affects procurement, handling, and storage procedures but does not impact electrical performance, mechanical compatibility, or circuit operation. The device itself is identical in both packaging formats.

Q: Are gate drive requirements the same for both parts?

A: Yes. Both parts have identical gate threshold voltage (4V @ 250µA), maximum gate-source voltage (±20V), and gate charge specifications (20nC @ 10V). Gate drive circuit design and component selection remain unchanged when substituting IRFD320PBF for IRFD320.

Q: What is the significance of ROHS3 compliance on IRFD320PBF?

A: ROHS3 compliance indicates the IRFD320PBF meets Restriction of Hazardous Substances Directive requirements, restricting the use of specific hazardous materials in electrical and electronic equipment. This certification is mandatory for applications and markets subject to RoHS regulations. The obsolete IRFD320 does not carry this certification.

Q: Can IRFD320PBF handle the same voltage and current levels as IRFD320?

A: Yes. Both parts are rated for 400V drain-to-source voltage and 490mA continuous drain current at 25°C. On-state resistance is identical at 1.8Ω (measured at 210mA, 10V gate-source voltage), ensuring equivalent switching performance and power dissipation characteristics.

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