IRFD220 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFD220 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with 800mA continuous drain current capability. This device is packaged in a 4-HVMDIP through-hole configuration and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The IRFD220 carries an obsolete product status, indicating that the original part is no longer in active production. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing maintenance and repair of legacy systems utilizing this component.

Substiute Parts

IRFD220

Vishay SiliconixIn Stock: 45409IRFD220 Datasheet

Current PartRFQ

IRFD220PBF

Vishay SiliconixIn Stock: 4214IRFD220PBF Datasheet

DirectRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFD220 is determined by electrical and mechanical parameter equivalence. The critical parameters that define substitutability are:

Electrical Parameters:

• Drain to Source Voltage (Vdss): 200V
• Continuous Drain Current (Id): 800mA
• On-State Resistance (Rds On): 800mOhm @ 480mA, 10V
• Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
• Gate Charge (Qg): 14nC @ 10V
• Maximum Gate Voltage (Vgs): ±20V
• Input Capacitance (Ciss): 260pF @ 25V
• Power Dissipation: 1W
• Operating Temperature Range: -55°C to 150°C

Mechanical Parameters:

• Mounting Type: Through Hole
• Package Configuration: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: 4-HVMDIP

Substitute parts must match all electrical specifications and maintain identical mechanical compatibility to ensure direct replacement without circuit redesign or PCB modification.

Parameter Comparison

Engineering Selection Recommendations

The IRFD220PBF is a direct electrical and mechanical equivalent of the IRFD220. All electrical parameters, including voltage ratings, current ratings, on-state resistance, gate characteristics, and thermal specifications, are identical. Both devices share the same 4-HVMDIP through-hole package configuration, enabling direct PCB-level substitution without layout modification.

The primary distinction between these parts is product status and compliance certification. The IRFD220 is obsolete and carries RoHS non-compliant status, while the IRFD220PBF is an active product with ROHS3 compliance. For new designs, repair operations, or systems requiring regulatory compliance with modern environmental standards, the IRFD220PBF is the appropriate selection.

The IRFD220PBF is available in bulk packaging, which differs from the original part's packaging designation. This distinction affects procurement and inventory management but does not impact electrical or mechanical performance.

Frequently Asked Questions (FAQ)

Q: Can the IRFD220PBF be used as a direct replacement for the IRFD220?

A: Yes. The IRFD220PBF is electrically and mechanically identical to the IRFD220. All electrical parameters, including Vdss, Id, Rds On, gate characteristics, and thermal ratings, match exactly. The 4-HVMDIP through-hole package is identical, enabling direct PCB substitution without circuit redesign or board modification.

Q: What is the primary reason to substitute the IRFD220 with the IRFD220PBF?

A: The IRFD220 is obsolete and no longer manufactured. The IRFD220PBF is the active equivalent from the same manufacturer (Vishay Siliconix) with identical electrical and mechanical specifications. Additionally, the IRFD220PBF carries ROHS3 compliance, meeting modern environmental and regulatory requirements.

Q: Are there any differences in package dimensions between the IRFD220 and IRFD220PBF?

A: No. Both devices use the 4-DIP (0.300", 7.62mm) package configuration with the 4-HVMDIP supplier device package designation. Pin spacing, lead length, and overall package footprint are identical, ensuring compatibility with existing PCB designs.

Q: Does the IRFD220PBF require any circuit modifications when substituting for the IRFD220?

A: No circuit modifications are required. The IRFD220PBF maintains identical electrical characteristics across all operating parameters. Gate drive voltage, drain current handling, on-state resistance, and thermal performance are equivalent, allowing direct substitution in existing circuit designs.

Q: What is the difference between the IRFD220 and IRFD220PBF in terms of RoHS compliance?

A: The IRFD220 is RoHS non-compliant, while the IRFD220PBF is ROHS3 compliant. ROHS3 compliance indicates adherence to the Restriction of Hazardous Substances Directive, restricting the use of specific hazardous materials in electrical and electronic equipment. For applications requiring regulatory compliance or integration into modern systems, the IRFD220PBF is the appropriate choice.

Q: Is the IRFD220PBF available in the same quantities as the IRFD220?

A: Availability differs. The IRFD220 (obsolete) has 45,299 pieces in stock, while the IRFD220PBF (active) has 4,166 pieces in stock. Procurement timelines and lead times may vary based on current inventory levels and supplier production schedules.

Q: Can the IRFD220PBF handle the same power dissipation as the IRFD220?

A: Yes. Both devices are rated for 1W maximum power dissipation at ambient temperature (Ta). Thermal performance, junction temperature range (-55°C to 150°C), and heat dissipation characteristics are identical.

Q: Are there any gate drive voltage differences between the IRFD220 and IRFD220PBF?

A: No. Both devices require 10V drive voltage for maximum Rds On specification and accept gate voltages up to ±20V. Gate threshold voltage (Vgs(th)) is 4V @ 250µA for both parts, and gate charge (Qg) is 14nC @ 10V for both devices.