IRFD210 Equivalent & Substitute Parts

Part Overview

The IRFD210 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 600mA continuous drain current at 25°C. The device is housed in a 4-HVMDIP through-hole package and is designed for general-purpose switching applications requiring moderate voltage and current ratings.

The IRFD210 carries an obsolete product status. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this component.

Substiute Parts

IRFD210
Vishay SiliconixIn Stock: 3948IRFD210 Datasheet
IRFD210
Current Part
IRFD210PBF
Vishay SiliconixIn Stock: 4942IRFD210PBF Datasheet
IRFD210PBF
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 600 mA
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 1.5 Ohm @ 360mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 8.2 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 140 pF @ 25V
Power Dissipation (Max) 1 W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)

Substitute Part Grouping Explanation

Substitution of the IRFD210 is determined by strict equivalence across all critical electrical and mechanical parameters. The substitute part must satisfy the following criteria:

Electrical Parameters (Must Match):

  • FET Type: N-Channel
  • Drain to Source Voltage (Vdss): 200V
  • Continuous Drain Current (Id) @ 25°C: 600mA
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 1.5Ohm @ 360mA, 10V
  • Gate Threshold Voltage (Vgs(th)) @ Id: 4V @ 250µA
  • Gate Charge (Qg) @ Vgs: 8.2nC @ 10V
  • Maximum Gate Voltage (Vgs): ±20V
  • Input Capacitance (Ciss) @ Vds: 140pF @ 25V
  • Power Dissipation (Max): 1W
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-HVMDIP

The IRFD210PBF meets all specified criteria and is identified as a direct substitute.

Parameter Comparison

Parameter IRFD210 IRFD210PBF Match
Manufacturer Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 200V 200V
Continuous Drain Current (Id) @ 25°C 600mA 600mA
Drive Voltage (Max Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 360mA, 10V 1.5Ohm @ 360mA, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) @ Vgs 8.2nC @ 10V 8.2nC @ 10V
Maximum Gate Voltage (Vgs) ±20V ±20V
Input Capacitance (Ciss) @ Vds 140pF @ 25V 140pF @ 25V
Power Dissipation (Max) 1W 1W
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP 4-HVMDIP
Product Status Obsolete Active
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

The IRFD210PBF is a direct electrical and mechanical equivalent to the IRFD210. Both components share identical electrical specifications across all rated parameters, including voltage, current, gate characteristics, and thermal operating range. Both are housed in the same 4-DIP through-hole package with identical pin configuration and mechanical footprint.

The primary distinction between the two parts is product status and regulatory compliance. The IRFD210 is classified as obsolete, while the IRFD210PBF maintains active product status. Additionally, the IRFD210PBF carries ROHS3 compliance certification, whereas the IRFD210 is RoHS non-compliant.

For applications requiring new component procurement or long-term supply chain continuity, the IRFD210PBF is the appropriate selection. For legacy system repairs where original component specifications must be maintained, the IRFD210PBF provides full functional and mechanical compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IRFD210PBF be used as a direct replacement for the IRFD210?

A: Yes. The IRFD210PBF is electrically and mechanically identical to the IRFD210. All electrical parameters, including voltage rating, current rating, on-resistance, gate characteristics, and thermal specifications are identical. The package type, pin configuration, and mechanical footprint are also identical.

Q: What is the difference between the IRFD210 and IRFD210PBF?

A: The IRFD210 is classified as obsolete, while the IRFD210PBF maintains active product status. The IRFD210PBF is ROHS3 compliant, whereas the IRFD210 is RoHS non-compliant. Electrical and mechanical specifications are identical.

Q: Are there any compatibility concerns when substituting the IRFD210PBF for the IRFD210?

A: No compatibility concerns exist. The IRFD210PBF is a direct substitute with identical electrical performance and mechanical compatibility. PCB layout, circuit design, and thermal management considerations remain unchanged.

Q: What packaging options are available for the IRFD210PBF?

A: The IRFD210PBF is supplied in bulk packaging. Both the IRFD210 and IRFD210PBF use the 4-DIP (0.300", 7.62mm) through-hole package format.

Q: Is the IRFD210PBF suitable for new designs?

A: Yes. The IRFD210PBF carries active product status and ROHS3 compliance, making it suitable for new design implementations. The component meets current regulatory requirements for electronic component manufacturing and distribution.

Q: What is the operating temperature range for both parts?

A: Both the IRFD210 and IRFD210PBF operate across the temperature range of -55°C to 150°C (junction temperature).

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