IRFD120 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFD120 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 100V drain-to-source voltage with 1.3A continuous drain current. This device is packaged in a 4-DIP (0.300", 7.62mm) through-hole configuration and is designed for general-purpose switching and amplification applications.

The IRFD120 carries an obsolete product status. Locating equivalent substitute parts is necessary to support ongoing maintenance, repair, and production requirements for legacy equipment and systems utilizing this component.

Substiute Parts

IRFD120
Vishay SiliconixIn Stock: 8429IRFD120 Datasheet
IRFD120
Current Part
IRFD120PBF
Vishay SiliconixIn Stock: 41156IRFD120PBF Datasheet
IRFD120PBF
Direct
IRFD123PBF
Vishay SiliconixIn Stock: 4315IRFD123PBF Datasheet
IRFD123PBF
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1.3 A (Ta)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 270 mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25V
Power Dissipation (Max) 1.3 W (Ta)
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP

Substitute Part Grouping Explanation

Substitute parts for the IRFD120 are identified based on electrical and mechanical parameter equivalence. All substitute candidates must satisfy the following criteria:

Electrical Parameters (Must Match):

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature: -55°C to 175°C (TJ)

Mechanical Parameters (Must Match):

  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: 4-HVMDIP

Substitute parts are classified into two categories:

Direct Manufacturer Equivalent: IRFD120PBF is the direct equivalent from Vishay Siliconix, offering identical electrical and mechanical specifications with active product status and improved compliance certifications.

Parametric Equivalent: IRFD123PBF is a parametric equivalent from Vishay Siliconix, matching all electrical and mechanical specifications while maintaining active product status and compliance certifications.

Parameter Comparison

Parameter IRFD120 IRFD120PBF IRFD123PBF
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V 100V 100V
Current - Continuous Drain (Id) @ 25°C 1.3A (Ta) 1.3A (Ta) 1.3A (Ta)
Drive Voltage (Max Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V 270mOhm @ 780mA, 10V 270mOhm @ 780mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V 16nC @ 10V 16nC @ 10V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V 360pF @ 25V 360pF @ 25V
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C to 175°C (TJ) -55°C to 175°C (TJ) -55°C to 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP 4-HVMDIP 4-HVMDIP
Product Status Obsolete Active Active
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IRFD120PBF is the primary substitute for the obsolete IRFD120. This part maintains complete electrical and mechanical equivalence while offering the following advantages:

  • Active product status ensures ongoing availability and supply chain continuity
  • ROHS3 compliance satisfies modern regulatory requirements
  • Identical parametric specifications enable direct replacement without circuit modification
  • Bulk packaging option provides flexibility for production and repair applications

IRFD123PBF is an alternative parametric equivalent offering identical electrical and mechanical specifications. This part is suitable for applications where the IRFD123 base product number is acceptable within design documentation and inventory management systems.

Both substitute parts are manufactured by Vishay Siliconix and carry REACH Unaffected status, matching the regulatory profile of the original IRFD120.

Frequently Asked Questions (FAQ)

Q: Can IRFD120PBF be used as a direct replacement for IRFD120?

A: Yes. IRFD120PBF is electrically and mechanically equivalent to IRFD120. All electrical parameters, including Vdss, Id, Rds On, gate charge, and operating temperature range, are identical. The 4-DIP through-hole package is unchanged, enabling direct PCB substitution without layout modification.

Q: What is the difference between IRFD120PBF and IRFD123PBF?

A: Both parts are parametric equivalents with identical electrical and mechanical specifications. The primary difference is the base product number designation (IRFD120 versus IRFD123). Both are manufactured by Vishay Siliconix, carry active product status, and are ROHS3 compliant. Selection between these parts depends on design documentation requirements and inventory management preferences.

Q: Why is the IRFD120 listed as obsolete?

A: The IRFD120 has reached end-of-life status in the manufacturer's product portfolio. IRFD120PBF and IRFD123PBF represent the active product alternatives that maintain full electrical and mechanical compatibility.

Q: Are there any compliance differences between IRFD120 and its substitutes?

A: Yes. The original IRFD120 is RoHS non-compliant, while both IRFD120PBF and IRFD123PBF are ROHS3 compliant. All three parts maintain REACH Unaffected status. For applications subject to RoHS regulations, IRFD120PBF or IRFD123PBF must be used.

Q: Will the substitutes work in existing circuit designs without modification?

A: Yes. IRFD120PBF and IRFD123PBF maintain complete parametric equivalence with IRFD120 across all electrical characteristics and operating conditions. No circuit design changes are required for substitution.

Q: What is the package compatibility between IRFD120 and its substitutes?

A: All three parts use the 4-DIP (0.300", 7.62mm) through-hole package with 4-HVMDIP supplier device package designation. Pin-to-pin compatibility is maintained, enabling direct PCB substitution without layout modification.

Q: Are IRFD120PBF and IRFD123PBF available in different packaging options?

A: Both substitute parts are available in bulk packaging. The original IRFD120 packaging information was not specified in the provided data.

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