IRFD113 N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFD113 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 60V drain-to-source voltage with 800mA continuous drain current capability. Designed for through-hole mounting in 4-DIP packaging, this device is classified as obsolete, necessitating identification of active equivalent parts for new designs and ongoing production requirements. The IRFD113PBF serves as the direct active substitute, maintaining identical electrical and mechanical specifications while offering current availability and improved compliance status.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	60	V
Current - Continuous Drain (Id) @ 25°C	800	mA
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	800	mOhm @ 800mA, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	200	pF @ 25V
Power Dissipation (Max)	1	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	4-DIP (0.300", 7.62mm)	—
Supplier Device Package	4-HVMDIP	—

Substitute Part Grouping Explanation

Substitution of the IRFD113 with the IRFD113PBF is based on electrical and mechanical parameter equivalence. Both devices share identical specifications across all critical performance parameters:

Electrical Equivalence Criteria:

Drain-to-source voltage rating: 60V (identical)
Continuous drain current: 800mA (identical)
On-state resistance (Rds On): 800mOhm @ 800mA, 10V (identical)
Gate threshold voltage: 4V @ 250µA (identical)
Gate charge: 7nC @ 10V (identical)
Maximum gate-source voltage: ±20V (identical)
Input capacitance: 200pF @ 25V (identical)
Power dissipation: 1W (identical)
Operating temperature range: -55°C to 150°C (identical)

Mechanical Equivalence Criteria:

Mounting type: Through Hole (identical)
Package designation: 4-DIP (0.300", 7.62mm) (identical)
Supplier device package: 4-HVMDIP (identical)

The IRFD113PBF maintains 100% functional and physical compatibility with the IRFD113, differing only in product status and compliance certifications.

Parameter Comparison

Parameter	IRFD113	IRFD113PBF	Match
Manufacturer	Vishay Siliconix	Vishay Siliconix	Yes
FET Type	N-Channel	N-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	60V	60V	Yes
Current - Continuous Drain (Id) @ 25°C	800mA	800mA	Yes
Drive Voltage (Max Rds On)	10V	10V	Yes
Rds On (Max) @ Id, Vgs	800mOhm @ 800mA, 10V	800mOhm @ 800mA, 10V	Yes
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	Yes
Gate Charge (Qg) (Max) @ Vgs	7nC @ 10V	7nC @ 10V	Yes
Vgs (Max)	±20V	±20V	Yes
Input Capacitance (Ciss) (Max) @ Vds	200pF @ 25V	200pF @ 25V	Yes
Power Dissipation (Max)	1W	1W	Yes
Operating Temperature Range	-55°C to 150°C	-55°C to 150°C	Yes
Mounting Type	Through Hole	Through Hole	Yes
Package / Case	4-DIP (0.300", 7.62mm)	4-DIP (0.300", 7.62mm)	Yes
Supplier Device Package	4-HVMDIP	4-HVMDIP	Yes
Product Status	Obsolete	Active	Different
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Different
Packaging Type	Not specified	Tube	Different

Engineering Selection Recommendations

Primary Selection: IRFD113PBF

The IRFD113PBF is the direct equivalent substitute for the obsolete IRFD113. Selection of the IRFD113PBF is based on the following engineering criteria:

Electrical Equivalence: All electrical parameters are identical to the IRFD113, ensuring drop-in compatibility in existing circuit designs without modification to PCB layouts or component values.
Mechanical Compatibility: Identical through-hole 4-DIP packaging and pin configuration enable direct replacement without mechanical redesign.
Product Status: The IRFD113PBF maintains active production status, ensuring long-term availability and supply chain continuity compared to the obsolete IRFD113.
Compliance Certification: The IRFD113PBF is ROHS3 compliant, meeting current regulatory requirements for electronic components in regulated markets. The original IRFD113 is RoHS non-compliant.
Packaging Availability: The IRFD113PBF is supplied in tube packaging, facilitating automated assembly processes and inventory management.

For applications requiring the IRFD113, the IRFD113PBF provides identical electrical performance with improved compliance status and guaranteed availability.

Frequently Asked Questions (FAQ)

Q: Can the IRFD113PBF be used as a direct replacement for the IRFD113?

A: Yes. The IRFD113PBF is electrically and mechanically identical to the IRFD113. All electrical parameters, including voltage rating, current rating, on-state resistance, and thermal characteristics, are equivalent. The devices share identical through-hole 4-DIP packaging and pin configuration, enabling direct substitution without circuit modification.

Q: What is the primary difference between the IRFD113 and IRFD113PBF?

A: The IRFD113 is classified as obsolete, while the IRFD113PBF maintains active production status. Additionally, the IRFD113PBF is ROHS3 compliant, whereas the IRFD113 is RoHS non-compliant. The IRFD113PBF is supplied in tube packaging. All electrical and mechanical specifications remain identical.

Q: Are there any circuit design considerations when substituting the IRFD113 with the IRFD113PBF?

A: No circuit design modifications are required. The IRFD113PBF maintains identical electrical characteristics, including drain-to-source voltage (60V), continuous drain current (800mA), on-state resistance (800mOhm @ 800mA, 10V), and operating temperature range (-55°C to 150°C). PCB layouts, gate drive circuits, and component values remain unchanged.

Q: What is the package configuration for both devices?

A: Both the IRFD113 and IRFD113PBF utilize 4-DIP through-hole packaging with 0.300" (7.62mm) pitch. The supplier device package designation is 4-HVMDIP. Pin spacing and hole diameter specifications are identical, ensuring mechanical interchangeability.

Q: Why is the IRFD113 classified as obsolete?

A: The IRFD113 has been discontinued by the manufacturer. The IRFD113PBF serves as the active replacement, offering identical performance with current availability and improved regulatory compliance.

Q: Is the IRFD113PBF suitable for new product designs?

A: Yes. The IRFD113PBF is the recommended component for new designs requiring an N-Channel MOSFET with 60V rating and 800mA continuous drain current. Active production status and ROHS3 compliance ensure long-term supply availability and regulatory compliance.

Q: What are the key electrical parameters that define substitution compatibility?

A: Substitution compatibility is determined by matching the following parameters: drain-to-source voltage (Vdss = 60V), continuous drain current (Id = 800mA @ 25°C), on-state resistance (Rds On = 800mOhm @ 800mA, 10V), gate threshold voltage (Vgs(th) = 4V @ 250µA), maximum gate-source voltage (Vgs = ±20V), and operating temperature range (-55°C to 150°C). The IRFD113PBF matches all these specifications.

Q: Are there inventory considerations when selecting between the IRFD113 and IRFD113PBF?

A: The IRFD113 has 18,199 pieces in stock as new original inventory. The IRFD113PBF has 3,291 pieces in stock. For applications requiring immediate availability of large quantities, the IRFD113 inventory may be considered; however, the IRFD113PBF is the recommended long-term solution due to active production status and compliance certification.

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