IRFD110 Equivalent & Substitute Parts

Part Overview

The IRFD110 is an N-Channel MOSFET rated for 100V drain-to-source voltage with 1A continuous drain current at 25°C. This device is packaged in a 4-DIP (0.300", 7.62mm) through-hole configuration and is designed for general-purpose switching applications requiring moderate voltage and current handling.

The original IRFD110 manufactured by Vishay Siliconix is classified as obsolete. Locating equivalent and substitute parts is necessary to maintain design continuity, ensure component availability, and support ongoing production or repair requirements. Substitute parts must maintain identical electrical characteristics and mechanical compatibility to ensure direct replacement without circuit redesign.

Substiute Parts

IRFD110
Vishay SiliconixIn Stock: 16548IRFD110 Datasheet
IRFD110
Current Part
IRFD110PBF
Vishay SiliconixIn Stock: 26359IRFD110PBF Datasheet
IRFD110PBF
Direct
IRFD110
Harris CorporationIn Stock: 16634IRFD110 Datasheet
IRFD110
Parametric Equivalent

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 1 A (Ta)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ 600mA, 10V 540 mOhm
Vgs(th) (Max) @ 250µA 4 V
Gate Charge (Qg) (Max) @ 10V 8.3 nC
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ 25V 180 pF
Power Dissipation (Max) 1.3 W (Ta)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitute parts for the IRFD110 are classified based on electrical parameter equivalence and product status. All substitute candidates must satisfy the following criteria:

Electrical Equivalence Requirements:

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Continuous Drain Current (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On): 10V
  • Rds On (Max) @ 600mA, 10V: 540mOhm
  • Vgs(th) (Max) @ 250µA: 4V
  • Gate Charge (Qg) (Max) @ 10V: 8.3nC
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ 25V: 180pF
  • Power Dissipation (Max): 1.3W (Ta)
  • Operating Temperature Range: -55°C to 175°C (TJ)

Mechanical Compatibility Requirements:

  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts are grouped into two categories: direct manufacturer equivalents and parametric equivalents from alternative manufacturers. All listed substitutes maintain identical electrical performance and mechanical form factor.

Parameter Comparison

Parameter IRFD110 (Vishay Siliconix) IRFD110PBF (Vishay Siliconix) IRFD110 (Harris Corporation)
Manufacturer Vishay Siliconix Vishay Siliconix Harris Corporation
Product Status Obsolete Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Vdss 100V 100V 100V
Id @ 25°C 1A (Ta) 1A (Ta) 1A (Ta)
Drive Voltage (Max Rds On) 10V 10V 10V
Rds On (Max) @ 600mA, 10V 540mOhm 540mOhm 540mOhm
Vgs(th) (Max) @ 250µA 4V 4V 4V
Gate Charge (Qg) (Max) @ 10V 8.3nC 8.3nC 8.3nC
Vgs (Max) ±20V ±20V ±20V
Ciss (Max) @ 25V 180pF 180pF 180pF
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta) 1.3W (Ta)
Operating Temperature -55°C to 175°C (TJ) -55°C to 175°C (TJ) -55°C to 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
MSL 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)
RoHS Status RoHS non-compliant ROHS3 Compliant RoHS non-compliant
REACH Status REACH Unaffected REACH Unaffected Vendor Undefined
Packaging Tube

Engineering Selection Recommendations

IRFD110PBF (Vishay Siliconix) — Recommended Primary Substitute

The IRFD110PBF is the direct manufacturer equivalent from Vishay Siliconix and is classified as an active product. This part maintains complete electrical and mechanical compatibility with the obsolete IRFD110. The IRFD110PBF is supplied in tube packaging and carries ROHS3 compliance certification, making it suitable for applications requiring regulatory adherence. With 26,300 units in stock, this part offers superior availability compared to the original IRFD110.

IRFD110 (Harris Corporation) — Alternative Parametric Equivalent

The Harris Corporation IRFD110 is a parametric equivalent that satisfies all electrical specifications and mechanical requirements. This part is classified as active and maintains identical performance characteristics. However, REACH status is listed as vendor undefined. This part is suitable for applications where manufacturer diversity is required or when Vishay Siliconix supply is constrained.

Product Status Consideration

The original IRFD110 from Vishay Siliconix is obsolete. Direct substitution with the IRFD110PBF from the same manufacturer is the preferred approach for new designs and ongoing production. The Harris Corporation equivalent provides an alternative source when primary supply is unavailable.

Frequently Asked Questions (FAQ)

Q: Can the IRFD110PBF be used as a direct replacement for the obsolete IRFD110?

A: Yes. The IRFD110PBF is electrically and mechanically identical to the IRFD110. All electrical parameters, including Vdss, Id, Rds On, gate charge, and operating temperature range, are equivalent. The 4-DIP through-hole package is identical. The IRFD110PBF is an active product with superior availability.

Q: What is the difference between the IRFD110 and IRFD110PBF?

A: The primary differences are product status and RoHS compliance. The IRFD110 is obsolete and RoHS non-compliant. The IRFD110PBF is an active product with ROHS3 compliance and is supplied in tube packaging. Electrical and mechanical specifications are identical.

Q: Is the Harris Corporation IRFD110 compatible with circuits designed for the Vishay Siliconix IRFD110?

A: Yes. The Harris Corporation IRFD110 maintains identical electrical parameters and mechanical form factor. All key specifications—Vdss, Id, Rds On, gate charge, input capacitance, and operating temperature range—are equivalent. Pin configuration and 4-DIP package dimensions are identical.

Q: What packaging options are available for substitute parts?

A: The IRFD110PBF is supplied in tube packaging. The Harris Corporation IRFD110 packaging is not specified in the available data. Both parts use the 4-DIP (0.300", 7.62mm) through-hole package form factor.

Q: Are there RoHS compliance differences between substitute options?

A: Yes. The IRFD110PBF carries ROHS3 compliance certification. The original IRFD110 and the Harris Corporation IRFD110 are both RoHS non-compliant. For applications requiring RoHS compliance, the IRFD110PBF is the appropriate selection.

Q: What is the moisture sensitivity level for these parts?

A: All listed parts carry MSL 1 (Unlimited) classification, indicating no moisture sensitivity restrictions during storage or handling.

Q: Can these parts be used interchangeably in existing circuit boards?

A: Yes. All substitute parts maintain identical electrical performance and mechanical compatibility. The 4-DIP through-hole package, pin configuration, and electrical characteristics are equivalent across all listed parts. Direct board-level substitution is supported.

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