IRFD024 Equivalent & Substitute Parts

Part Overview

The IRFD024 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 60V drain-to-source voltage with a continuous drain current of 2.5A at 25°C. This device is housed in a 4-HVMDIP through-hole package and is designed for general-purpose switching applications requiring moderate voltage and current handling capabilities. The part maintains Active product status with 5400 units currently in stock.

Substitute parts are identified to address specific application requirements, including packaging preferences, compliance certifications, and inventory availability while maintaining electrical and mechanical compatibility.

Substiute Parts

IRFD024
Vishay SiliconixIn Stock: 5457IRFD024 Datasheet
IRFD024
Current Part
IRFD024PBF
Vishay SiliconixIn Stock: 2109IRFD024PBF Datasheet
IRFD024PBF
Direct

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 2.5 A (Ta)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 100 mOhm @ 1.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4 V @ 250µA
Gate Charge (Qg) @ Vgs 25 nC @ 10V
Maximum Gate Voltage (Vgs) ±20 V
Input Capacitance (Ciss) @ Vds 640 pF @ 25V
Power Dissipation (Max) 1.3 W (Ta)
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP

Substitute Part Grouping Explanation

Substitution of the IRFD024 is determined by strict equivalence across all electrical and mechanical parameters. The substitute part must maintain identical specifications for:

  • FET channel type (N-Channel)
  • Drain-to-source voltage rating (60V)
  • Continuous drain current capability (2.5A @ 25°C)
  • On-resistance characteristics (100mOhm @ 1.5A, 10V)
  • Gate threshold voltage (4V @ 250µA)
  • Gate charge (25nC @ 10V)
  • Maximum gate voltage (±20V)
  • Input capacitance (640pF @ 25V)
  • Power dissipation rating (1.3W)
  • Operating temperature range (-55°C to 175°C)
  • Through-hole mounting configuration
  • 4-DIP package footprint (0.300", 7.62mm)
  • 4-HVMDIP supplier device package designation

The IRFD024PBF is identified as a direct substitute based on complete electrical and mechanical parameter equivalence. The primary distinction between the main part and substitute relates to packaging format (Bulk vs. standard) and compliance certifications.

Parameter Comparison

Parameter IRFD024 IRFD024PBF Match
Manufacturer Vishay Siliconix Vishay Siliconix
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 60V 60V
Continuous Drain Current (Id) @ 25°C 2.5A (Ta) 2.5A (Ta)
Drive Voltage (Max Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 1.5A, 10V 100mOhm @ 1.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 10V 25nC @ 10V
Maximum Gate Voltage (Vgs) ±20V ±20V
Input Capacitance (Ciss) @ Vds 640pF @ 25V 640pF @ 25V
Power Dissipation (Max) 1.3W (Ta) 1.3W (Ta)
Operating Temperature Range -55°C to 175°C (TJ) -55°C to 175°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case 4-DIP (0.300", 7.62mm) 4-DIP (0.300", 7.62mm)
Supplier Device Package 4-HVMDIP 4-HVMDIP
Product Status Active Active
Packaging Format Standard Bulk
RoHS Status RoHS non-compliant ROHS3 Compliant
REACH Status Not specified REACH Unaffected

Engineering Selection Recommendations

Both the IRFD024 and IRFD024PBF are electrically and mechanically equivalent N-Channel MOSFETs suitable for direct substitution in 60V, 2.5A switching applications. Selection between these parts is determined by application-specific requirements:

IRFD024 is appropriate for applications where RoHS non-compliant components are acceptable or required by legacy system specifications. This part is currently available with 5400 units in stock.

IRFD024PBF is the preferred selection for new designs and applications requiring regulatory compliance. This variant is ROHS3 Compliant and REACH Unaffected, meeting modern environmental and safety standards. The part is available in Bulk packaging format with 2027 units in stock. The PBF designation indicates lead-free plating, which is consistent with ROHS3 compliance requirements.

Both parts maintain identical electrical performance, thermal characteristics, and physical footprint, ensuring seamless integration into existing circuit designs without modification to PCB layouts or driver circuitry.

Frequently Asked Questions (FAQ)

Q: Can IRFD024PBF be used as a direct replacement for IRFD024 in existing designs?

A: Yes. The IRFD024PBF is electrically and mechanically equivalent to the IRFD024. All electrical parameters, including voltage rating, current capacity, on-resistance, gate characteristics, and thermal specifications are identical. The physical footprint and through-hole mounting configuration are unchanged. No circuit modifications are required.

Q: What is the difference between IRFD024 and IRFD024PBF?

A: The primary differences are packaging format and compliance certifications. IRFD024PBF is supplied in Bulk packaging and is ROHS3 Compliant with REACH Unaffected status. The IRFD024 is RoHS non-compliant. Electrically and mechanically, both parts are identical.

Q: Are there any thermal or performance differences between these parts?

A: No. Both parts have identical power dissipation ratings (1.3W), operating temperature ranges (-55°C to 175°C), and all electrical characteristics. Thermal performance in circuit applications will be equivalent.

Q: What does the "PBF" suffix indicate?

A: The PBF suffix indicates lead-free plating and is associated with ROHS3 compliance. This designation confirms the part meets environmental regulations restricting hazardous substances in electrical and electronic equipment.

Q: Can I mix IRFD024 and IRFD024PBF in the same production batch?

A: Both parts are functionally equivalent and can be used interchangeably from an electrical and mechanical standpoint. However, compliance requirements and supply chain policies should be evaluated for consistency across production runs.

Q: What is the 4-HVMDIP package?

A: The 4-HVMDIP is a 4-pin high-voltage MOSFET dual in-line package with a 0.300-inch (7.62mm) pin spacing. This through-hole package is designed for high-voltage applications and provides robust mechanical connection suitable for manual assembly and automated insertion equipment.

Q: Are both parts suitable for high-temperature applications?

A: Yes. Both IRFD024 and IRFD024PBF are rated for continuous operation up to 175°C junction temperature, making them suitable for applications requiring extended temperature range performance.

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