IRFBF30STRR N-Channel MOSFET 900V 3.6A Equivalent & Substitute Parts

Part Overview

The IRFBF30STRR is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 900V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 125W at the case temperature. This component is classified as Active product status and is suitable for high-voltage switching applications requiring compact surface mount integration.

Equivalent and substitute parts are identified when alternative components share identical or compatible electrical and mechanical parameters within the specified operating ranges. Substitution becomes necessary due to inventory availability, supply chain considerations, packaging format preferences, or compliance requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	900	V
Current - Continuous Drain (Id) @ 25°C	3.6	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3.7	Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	1200	pF @ 25V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFBF30STRR are identified based on strict electrical and mechanical parameter compatibility. The substitution logic is organized into two categories:

Parametric Equivalent (Direct Substitution): Parts that maintain identical electrical specifications across all critical parameters including Vdss (900V), Id (3.6A), Rds On (3.7 Ohm @ 2.2A, 10V), gate charge (78 nC @ 10V), and operating temperature range (-55°C to 150°C). These parts are functionally interchangeable within the same circuit design without modification.

Manufacturer Recommended Substitute: Parts that differ in one or more critical electrical parameters but are designated as manufacturer-recommended alternatives. These substitutes require circuit-level evaluation to confirm suitability for the intended application.

The key parameters determining substitution eligibility are:

Drain to Source Voltage (Vdss): 900V
Continuous Drain Current (Id) @ 25°C: 3.6A (Tc)
On-State Resistance (Rds On) @ 2.2A, 10V: 3.7 Ohm
Gate Charge (Qg) @ 10V: 78 nC
Package Type: TO-263 (D2PAK) Surface Mount
Operating Temperature Range: -55°C to 150°C

Parameter Comparison

Parameter	IRFBF30STRR	IRFBF30STRLPBF	IRF540NSTRLPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	900V	900V	100V
Current - Continuous Drain (Id) @ 25°C	3.6A (Tc)	3.6A (Tc)	33A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	3.7 Ohm @ 2.2A, 10V	3.7 Ohm @ 2.2A, 10V	44 mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10V	78 nC @ 10V	71 nC @ 10V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1200 pF @ 25V	1200 pF @ 25V	1960 pF @ 25V
Power Dissipation (Max)	125W (Tc)	125W (Tc)	130W (Tc)
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Packaging Format	Tube	Tape & Reel (TR)	Cut Tape (CT) & Digi-Reel®
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active

Engineering Selection Recommendations

IRFBF30STRLPBF (Parametric Equivalent): This part is a direct electrical equivalent to the IRFBF30STRR, maintaining identical specifications for Vdss (900V), Id (3.6A), Rds On (3.7 Ohm), gate charge (78 nC), and operating temperature range (-55°C to 150°C). The primary difference is packaging format: IRFBF30STRLPBF is supplied in Tape & Reel (TR) format, whereas IRFBF30STRR is supplied in tube packaging. Both parts are manufactured by Vishay Siliconix and share the same base product number (IRFBF30). IRFBF30STRLPBF carries ROHS3 compliance, whereas IRFBF30STRR is RoHS non-compliant. Selection between these two parts depends on packaging requirements and compliance mandates for the end application.

IRF540NSTRLPBF (Manufacturer Recommended Substitute): This part is designated as a manufacturer-recommended alternative but exhibits significant electrical parameter differences. The IRF540NSTRLPBF is rated for 100V Vdss (compared to 900V for IRFBF30STRR) and 33A continuous drain current (compared to 3.6A). The on-state resistance is 44 mOhm @ 16A, 10V, substantially lower than the 3.7 Ohm specification of the IRFBF30STRR. Gate charge is 71 nC @ 10V, marginally lower than 78 nC. Input capacitance is 1960 pF @ 25V, higher than 1200 pF. Operating temperature extends to 175°C (compared to 150°C). This part is manufactured by Infineon Technologies under the HEXFET® series and is supplied in Cut Tape (CT) & Digi-Reel® format. IRF540NSTRLPBF is ROHS3 compliant. Due to the substantial reduction in Vdss rating (100V versus 900V), this substitute is applicable only to circuits designed for lower voltage operation and cannot be used as a direct replacement in high-voltage applications requiring 900V rating.

Frequently Asked Questions (FAQ)

Q: Can IRFBF30STRLPBF be used as a direct replacement for IRFBF30STRR?

A: Yes. IRFBF30STRLPBF is a parametric equivalent with identical electrical specifications. The difference is packaging format: IRFBF30STRLPBF is supplied in Tape & Reel (TR) format for automated assembly, while IRFBF30STRR is supplied in tube packaging. Both maintain the same 900V Vdss, 3.6A Id, 3.7 Ohm Rds On, and operating temperature range. IRFBF30STRLPBF offers the additional advantage of ROHS3 compliance.

Q: Is IRF540NSTRLPBF a suitable substitute for IRFBF30STRR?

A: IRF540NSTRLPBF is not a suitable direct replacement. While both are N-Channel MOSFETs in TO-263 (D2PAK) packages, the IRF540NSTRLPBF is rated for 100V Vdss, whereas IRFBF30STRR is rated for 900V Vdss. This represents a 9:1 voltage rating reduction. IRF540NSTRLPBF is applicable only to circuits designed for lower voltage operation and cannot withstand the 900V drain-to-source voltage that IRFBF30STRR is designed to handle.

Q: What are the key electrical parameters that determine substitution eligibility?

A: The critical parameters are Drain to Source Voltage (Vdss), Continuous Drain Current (Id) at 25°C, On-State Resistance (Rds On) at specified gate voltage, Gate Charge (Qg), and Operating Temperature Range. For a part to be considered a parametric equivalent, these parameters must match the original specification. Variations in these parameters indicate the substitute is suitable only for different circuit requirements.

Q: Does packaging format affect electrical performance?

A: No. Packaging format (tube, Tape & Reel, or Cut Tape) does not affect electrical performance. The format affects manufacturing processes, automated assembly compatibility, and supply chain logistics. IRFBF30STRR (tube) and IRFBF30STRLPBF (Tape & Reel) are electrically identical; selection depends on assembly requirements and inventory management.

Q: What is the significance of RoHS compliance status in substitution?

A: RoHS compliance status indicates regulatory conformance to restrictions on hazardous substances. IRFBF30STRR is RoHS non-compliant, while IRFBF30STRLPBF is ROHS3 compliant. For applications subject to RoHS regulations or customer requirements mandating RoHS compliance, IRFBF30STRLPBF is the appropriate selection. Both parts are electrically equivalent.

Q: Can I use IRF540NSTRLPBF in a 900V application?

A: No. IRF540NSTRLPBF has a maximum Vdss rating of 100V. Using this part in a 900V application will result in device failure due to exceeding the absolute maximum voltage rating. The part is designed for low-voltage applications only.

Q: What is the difference in gate charge between these parts?

A: IRFBF30STRR and IRFBF30STRLPBF both have gate charge of 78 nC @ 10V. IRF540NSTRLPBF has gate charge of 71 nC @ 10V, which is 7 nC lower. Lower gate charge results in faster switching speed and reduced gate drive power requirements. However, this parameter difference is secondary to the voltage rating mismatch for substitution decisions.

Q: Are all three parts suitable for the same operating temperature range?

A: IRFBF30STRR and IRFBF30STRLPBF both operate from -55°C to 150°C (TJ). IRF540NSTRLPBF extends to -55°C to 175°C (TJ), providing a 25°C higher maximum junction temperature. This extended range does not make IRF540NSTRLPBF suitable for 900V applications; the voltage rating limitation remains the primary constraint.

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