IRFBE30STRR N-Channel 800V 4.1A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBE30STRR is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 125W at the case temperature. This component is classified as Active product status and is suitable for high-voltage switching applications requiring moderate current handling in compact form factors.

Equivalent and substitute parts are identified when component availability is limited, supply chain disruptions occur, or design flexibility is required while maintaining electrical and mechanical compatibility within specified operating parameters.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	800	V
Continuous Drain Current (Id) @ 25°C	4.1	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	3	Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	78	nC @ 10V
Maximum Gate Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ Vds	1300	pF @ 25V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitute parts for the IRFBE30STRR are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical or functionally equivalent electrical specifications across all critical parameters: Drain-to-Source Voltage (Vdss) of 800V, Continuous Drain Current (Id) of 4.1A at 25°C, Drive Voltage of 10V, Rds On (Max) of 3 Ohm at specified conditions, Gate Threshold Voltage of 4V, Gate Charge of 78 nC, and Operating Temperature Range of -55°C to 150°C. These parts are housed in the same TO-263 (D2PAK) Surface Mount package and share identical mechanical footprints. Parametric equivalents include IRFBE30STRLPBF, SIHFBE30S-GE3, and SIHFBE30STRL-GE3, all manufactured by Vishay Siliconix.

Manufacturer Recommended Alternatives are parts that meet the same voltage and current class requirements but may exhibit variations in secondary electrical characteristics such as Rds On, Gate Charge, Input Capacitance, or maximum gate voltage ratings. These alternatives are qualified for the same application class and package form factor (TO-263 D2PAK) but require verification of specific circuit requirements. Manufacturer recommended alternatives include FQB4N80TM (onsemi), STB7NK80ZT4 (STMicroelectronics), and IRF540NSTRLPBF (Infineon Technologies).

Parameter Comparison

Parameter	IRFBE30STRR	IRFBE30STRLPBF	SIHFBE30S-GE3	SIHFBE30STRL-GE3	FQB4N80TM	STB7NK80ZT4	IRF540NSTRLPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	onsemi	STMicroelectronics	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	800	800	800	800	800	800	100
Id @ 25°C (A)	4.1	4.1	4.1	4.1	3.9	5.2	33
Drive Voltage (V)	10	10	10	10	10	10	10
Rds On (Max) (Ohm)	3 @ 2.5A, 10V	3 @ 2.5A, 10V	3 @ 2.5A, 10V	3 @ 2.5A, 10V	3.6 @ 1.95A, 10V	1.8 @ 2.6A, 10V	0.044 @ 16A, 10V
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	4.5 @ 100µA	4 @ 250µA
Gate Charge (nC)	78 @ 10V	78 @ 10V	78 @ 10V	78 @ 10V	25 @ 10V	56 @ 10V	71 @ 10V
Vgs (Max) (V)	±20	±20	±20	±20	±30	±30	±20
Ciss (pF)	1300 @ 25V	1300 @ 25V	1300 @ 25V	1300 @ 25V	880 @ 25V	1138 @ 25V	1960 @ 25V
Power Dissipation (W)	125 (Tc)	125 (Tc)	125 (Tc)	125 (Tc)	130 (Tc)	125 (Tc)	130 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
RoHS Status	Non-compliant	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
MSL	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Substitution)

IRFBE30STRLPBF, SIHFBE30S-GE3, and SIHFBE30STRL-GE3 are direct parametric equivalents to the IRFBE30STRR. All three parts maintain identical electrical specifications across Vdss (800V), Id (4.1A), Rds On (3 Ohm), Gate Charge (78 nC), and Operating Temperature Range (-55°C to 150°C). All are housed in the TO-263 (D2PAK) Surface Mount package with identical mechanical footprints and pin configurations.

IRFBE30STRLPBF and SIHFBE30STRL-GE3 are supplied in Tape & Reel (TR) packaging, which is suitable for automated assembly processes. IRFBE30STRLPBF carries ROHS3 compliance certification, whereas the original IRFBE30STRR is RoHS non-compliant. SIHFBE30S-GE3 is also supplied in Tape & Reel packaging with higher inventory availability (1325 Pcs).

Manufacturer Recommended Alternative Selection

FQB4N80TM (onsemi) is rated for 800V Vdss with 3.9A continuous drain current, representing a 4.9% reduction in current rating compared to the IRFBE30STRR. The device exhibits lower Gate Charge (25 nC versus 78 nC) and reduced Input Capacitance (880 pF versus 1300 pF), resulting in faster switching characteristics. Rds On is specified at 3.6 Ohm, which is 20% higher than the IRFBE30STRR. FQB4N80TM carries ROHS3 compliance and REACH Unaffected status.

STB7NK80ZT4 (STMicroelectronics) is rated for 800V Vdss with 5.2A continuous drain current, representing a 26.8% increase in current rating. The device exhibits superior Rds On performance at 1.8 Ohm (40% lower than IRFBE30STRR) and reduced Gate Charge (56 nC). Input Capacitance is 1138 pF, which is 12.5% lower than the IRFBE30STRR. Maximum gate voltage is ±30V, providing greater gate drive margin. STB7NK80ZT4 carries ROHS3 compliance and REACH Unaffected status.

IRF540NSTRLPBF (Infineon Technologies) is rated for 100V Vdss with 33A continuous drain current. This part is not suitable for direct substitution in applications requiring 800V voltage rating, as the Vdss specification is 8 times lower than the IRFBE30STRR. This part is listed as a manufacturer-provided alternative but is applicable only to circuits designed for lower voltage operation.

Compliance and Certification Considerations

The original IRFBE30STRR is RoHS non-compliant. Applications subject to RoHS3 regulatory requirements must select from IRFBE30STRLPBF, FQB4N80TM, STB7NK80ZT4, or IRF540NSTRLPBF, all of which carry ROHS3 compliance certification. FQB4N80TM and STB7NK80ZT4 additionally carry REACH Unaffected status, indicating no restriction under REACH regulations.

All substitute parts maintain MSL Level 1 (Unlimited) moisture sensitivity classification, matching the original component's handling requirements.

Frequently Asked Questions (FAQ)

Q: Can IRFBE30STRLPBF be used as a direct replacement for IRFBE30STRR?

A: Yes. IRFBE30STRLPBF is a parametric equivalent with identical electrical specifications (800V Vdss, 4.1A Id, 3 Ohm Rds On, 78 nC Gate Charge) and the same TO-263 (D2PAK) package footprint. The primary difference is packaging format (Tape & Reel versus bulk) and RoHS3 compliance status. No circuit modifications are required.

Q: What is the difference between SIHFBE30S-GE3 and SIHFBE30STRL-GE3?

A: Both parts are parametric equivalents with identical electrical specifications. The designation suffix "-STRL" indicates Tape & Reel packaging, while "S-GE3" indicates standard packaging. Both maintain the same TO-263 (D2PAK) footprint and electrical performance. Selection depends on assembly process requirements (automated versus manual).

Q: Is STB7NK80ZT4 a suitable substitute for IRFBE30STRR?

A: STB7NK80ZT4 is a manufacturer-recommended alternative for the same 800V voltage class. It maintains 800V Vdss and provides superior performance with 5.2A continuous drain current (26.8% higher), lower Rds On (1.8 Ohm versus 3 Ohm), and reduced Gate Charge (56 nC versus 78 nC). The TO-263 (D2PAK) package is identical. Applications requiring the exact 4.1A current specification should verify that the higher current rating does not introduce thermal or circuit design conflicts.

Q: Why is IRF540NSTRLPBF listed as a substitute if it has only 100V Vdss?

A: IRF540NSTRLPBF is listed as a manufacturer-provided alternative but is not suitable for direct substitution in circuits requiring 800V voltage rating. This part is applicable only to applications designed for lower voltage operation (100V or less). Substitution would require complete circuit redesign and is not recommended for 800V applications.

Q: What are the key electrical differences between FQB4N80TM and IRFBE30STRR?

A: FQB4N80TM maintains the same 800V Vdss rating but has 3.9A continuous drain current (4.9% lower), higher Rds On at 3.6 Ohm (20% higher), and significantly lower Gate Charge at 25 nC (68% lower). The lower Gate Charge results in faster switching speed, which may reduce switching losses in high-frequency applications. Input Capacitance is also reduced (880 pF versus 1300 pF), further improving switching performance.

Q: Are all substitute parts available in the same packaging options?

A: Parametric equivalents IRFBE30STRLPBF and SIHFBE30STRL-GE3 are supplied in Tape & Reel (TR) packaging. SIHFBE30S-GE3 is also supplied in Tape & Reel. Manufacturer-recommended alternatives FQB4N80TM and STB7NK80ZT4 are supplied in Cut Tape (CT) & Digi-Reel® packaging. All parts share the identical TO-263 (D2PAK) Surface Mount package footprint and pin configuration.

Q: What is the impact of RoHS compliance on part selection?

A: The original IRFBE30STRR is RoHS non-compliant. Applications subject to RoHS3 regulatory requirements (European Union and equivalent jurisdictions) must select from IRFBE30STRLPBF, FQB4N80TM, STB7NK80ZT4, or IRF540NSTRLPBF. All these alternatives carry ROHS3 compliance certification. RoHS compliance affects material composition and manufacturing processes but does not alter electrical performance or package footprint.

Q: Do all substitute parts have the same moisture sensitivity level?

A: Yes. All substitute parts, including parametric equivalents and manufacturer-recommended alternatives, maintain MSL Level 1 (Unlimited) moisture sensitivity classification. This matches the original IRFBE30STRR and indicates no special moisture control requirements during storage or handling.

Q: What is the operating temperature range difference between IRFBE30STRR and IRF540NSTRLPBF?

A: IRFBE30STRR operates from -55°C to 150°C (TJ). IRF540NSTRLPBF operates from -55°C to 175°C (TJ), providing an additional 25°C maximum junction temperature capability. However, IRF540NSTRLPBF is not suitable for 800V applications due to its 100V Vdss rating.

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