IRFBE30STRL N-Channel 800V 4.1A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBE30STRL is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 125W at the case temperature. This component is classified as Active product status and is suitable for high-voltage switching applications requiring moderate current handling in compact form factors.

Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative packaging formats are required, or when design specifications allow for functionally compatible alternatives from different manufacturers that meet the same electrical and mechanical requirements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	4.1	A (Tc)
Rds On (Max) @ Id, Vgs	3	Ohm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	78	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—

Substitute Part Grouping Explanation

Substitution of the IRFBE30STRL is determined by strict equivalence across the following critical parameters:

Primary Equivalence Criteria:

Drain to Source Voltage (Vdss): 800V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-263 (D2PAK)
Operating Temperature Range: -55°C to 150°C minimum

Secondary Compatibility Criteria:

Current - Continuous Drain (Id) @ 25°C: 4.1A or greater
Rds On (Max): 3 Ohm or lower
Power Dissipation (Max): 125W or greater
Gate Charge (Qg): 78 nC or lower

Substitute parts are grouped into two categories:

Parametric Equivalents: Parts that match all primary criteria and maintain identical or superior electrical performance across secondary criteria. These parts are direct functional replacements with no circuit redesign required.

Manufacturer Recommended Alternatives: Parts that meet primary voltage and package requirements but may exhibit variations in current rating, on-resistance, or gate charge characteristics. These parts are suitable for applications where the specified performance envelope permits tolerance in secondary parameters.

Parameter Comparison

Parameter	IRFBE30STRL	IRFBE30STRLPBF	SIHFBE30S-GE3	SIHFBE30STRL-GE3	FQB4N80TM	STB7NK80ZT4	IRF540NSTRLPBF
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	onsemi	STMicroelectronics	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	800	800	800	800	800	800	100
Id @ 25°C (A)	4.1	4.1	4.1	4.1	3.9	5.2	33
Rds On (Max) (Ohm)	3	3	3	3	3.6	1.8	0.044
Gate Charge (Qg) (nC)	78	78	78	78	25	56	71
Power Dissipation (W)	125	125	125	125	130	125	130
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 175
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
RoHS Status	Non-compliant	ROHS3 Compliant	Not specified	Not specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacements):

IRFBE30STRLPBF, SIHFBE30S-GE3, and SIHFBE30STRL-GE3 are parametric equivalents of the IRFBE30STRL. These parts maintain identical electrical specifications across all critical parameters including Vdss, Id, Rds On, gate charge, and power dissipation. The primary distinction is packaging format: IRFBE30STRLPBF is supplied in Tape & Reel (TR) format with ROHS3 compliance, while SIHFBE30S-GE3 and SIHFBE30STRL-GE3 are also Tape & Reel packaged variants. These parts are suitable for direct substitution without circuit modification.

Manufacturer Recommended Alternatives:

STB7NK80ZT4 (STMicroelectronics) meets the 800V voltage requirement and D2PAK package specification. This device exhibits superior on-resistance (1.8 Ohm versus 3 Ohm) and lower gate charge (56 nC versus 78 nC), resulting in improved switching efficiency. The continuous drain current rating of 5.2A exceeds the IRFBE30STRL specification. This part is suitable for applications where the enhanced performance characteristics are beneficial or where the original part is unavailable.

FQB4N80TM (onsemi) meets the 800V voltage requirement and D2PAK package specification. This device exhibits lower gate charge (25 nC versus 78 nC) and higher power dissipation capability (130W versus 125W). The continuous drain current rating of 3.9A is marginally lower than the IRFBE30STRL specification of 4.1A. This part is suitable for applications where gate charge reduction is advantageous and where the current requirement does not exceed 3.9A.

Not Recommended:

IRF540NSTRLPBF (Infineon Technologies) exhibits a Vdss rating of 100V, which is substantially lower than the IRFBE30STRL specification of 800V. This part is not suitable for substitution in applications requiring 800V voltage withstand capability.

Frequently Asked Questions (FAQ)

Q: Can IRFBE30STRLPBF be used as a direct replacement for IRFBE30STRL?

A: Yes. IRFBE30STRLPBF is a parametric equivalent with identical electrical specifications. The primary difference is packaging format (Tape & Reel versus bulk) and RoHS compliance status. Both parts are N-Channel 800V MOSFETs with 4.1A continuous drain current, 3 Ohm on-resistance, and 125W power dissipation in TO-263 (D2PAK) packages.

Q: What is the difference between SIHFBE30S-GE3 and SIHFBE30STRL-GE3?

A: Both parts are parametric equivalents of the IRFBE30STRL with identical electrical specifications. The designation difference reflects Vishay Siliconix internal product coding. Both are suitable for direct substitution.

Q: Can STB7NK80ZT4 replace IRFBE30STRL in all applications?

A: STB7NK80ZT4 meets the primary voltage (800V) and package (D2PAK) requirements. However, it exhibits different secondary characteristics: lower on-resistance (1.8 Ohm versus 3 Ohm), lower gate charge (56 nC versus 78 nC), and higher continuous drain current (5.2A versus 4.1A). Substitution is permissible in applications where these performance variations are acceptable or beneficial. Circuit performance may differ due to reduced switching losses.

Q: Why is IRF540NSTRLPBF listed as a substitute if it has only 100V rating?

A: IRF540NSTRLPBF is not a suitable substitute for the IRFBE30STRL. The 100V Vdss rating is incompatible with applications requiring 800V voltage withstand capability. This part should not be selected as a replacement.

Q: What is the significance of RoHS compliance status in part selection?

A: RoHS compliance status indicates conformance to Restriction of Hazardous Substances regulations. IRFBE30STRL is RoHS non-compliant, while IRFBE30STRLPBF, FQB4N80TM, and STB7NK80ZT4 are ROHS3 compliant. Selection depends on regulatory requirements for the end application and supply chain restrictions.

Q: Are all substitute parts available in the same TO-263 (D2PAK) package?

A: Yes. All listed substitute parts are housed in TO-263 (D2PAK) Surface Mount packages with identical pinout and footprint compatibility. PCB layout modifications are not required for mechanical substitution.

Q: What is the impact of gate charge differences on circuit design?

A: Gate charge (Qg) affects switching speed and driver circuit requirements. Lower gate charge (FQB4N80TM at 25 nC, STB7NK80ZT4 at 56 nC) results in faster switching transitions and reduced driver power dissipation compared to the IRFBE30STRL at 78 nC. Applications with high switching frequency benefit from lower gate charge characteristics.

Q: Can FQB4N80TM be used if the application requires exactly 4.1A continuous drain current?

A: FQB4N80TM is rated for 3.9A continuous drain current, which is 0.2A lower than the IRFBE30STRL specification. Substitution is permissible only if the actual application current requirement does not exceed 3.9A. Thermal analysis must confirm that the 130W power dissipation capability is sufficient for the reduced current rating.

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