IRFBE30SPBF Equivalent & Substitute Parts

Part Overview

The IRFBE30SPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The part is currently Active in product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1).

Substitute parts are identified when equivalent electrical performance and mechanical compatibility are required due to component availability, supply chain considerations, or design flexibility within the specified parameter ranges.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	800	V
Current - Continuous Drain (Id) @ 25°C	4.1	A (Tc)
Rds On (Max) @ Id, Vgs	3	Ohm @ 2.5A, 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution eligibility for the IRFBE30SPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 800V minimum
FET Type: N-Channel
Mounting Type: Surface Mount D2PAK package
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 150°C minimum
RoHS3 Compliance: Required

Secondary Compatibility Parameters:

Continuous Drain Current (Id): 3.9A or greater at 25°C
Power Dissipation: 125W or greater at Tc
Gate Drive Voltage: 10V nominal
Vgs(th) threshold voltage: Within ±20V gate voltage specification

The three identified substitute parts meet these criteria with equivalent or superior electrical ratings and identical mechanical packaging. All substitutes maintain Surface Mount D2PAK form factor compatibility and RoHS3 compliance status.

Parameter Comparison

Parameter	IRFBE30SPBF (Vishay)	STB7NK80ZT4 (STMicroelectronics)	FQB4N80TM (onsemi)	IRF540NSTRLPBF (Infineon)
Manufacturer	Vishay Siliconix	STMicroelectronics	onsemi	Infineon Technologies
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Drain to Source Voltage (Vdss)	800V	800V	800V	100V
Current - Continuous Drain (Id) @ 25°C	4.1A (Tc)	5.2A (Tc)	3.9A (Tc)	33A (Tc)
Rds On (Max) @ Id, Vgs	3Ohm @ 2.5A, 10V	1.8Ohm @ 2.6A, 10V	3.6Ohm @ 1.95A, 10V	44mOhm @ 16A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4.5V @ 100µA	5V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	78 nC @ 10V	56 nC @ 10V	25 nC @ 10V	71 nC @ 10V
Vgs (Max)	±20V	±30V	±30V	±20V
Input Capacitance (Ciss) (Max) @ Vds	1300 pF @ 25V	1138 pF @ 25V	880 pF @ 25V	1960 pF @ 25V
Power Dissipation (Max)	125W (Tc)	125W (Tc)	130W (Tc)	130W (Tc)
Operating Temperature Range	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	-55°C to 175°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Active

Engineering Selection Recommendations

STB7NK80ZT4 (STMicroelectronics)

The STB7NK80ZT4 is a direct substitute for the IRFBE30SPBF with superior electrical performance. It maintains the 800V Vdss rating and exceeds the continuous drain current specification at 5.2A versus 4.1A. The lower on-resistance (1.8Ohm) provides improved thermal efficiency. Both devices share identical operating temperature range (-55°C to 150°C), Surface Mount D2PAK packaging, and RoHS3 compliance. This substitute is suitable for applications requiring equivalent or enhanced performance within the same voltage class.

FQB4N80TM (onsemi)

The FQB4N80TM is a functional equivalent with 800V Vdss rating and 3.9A continuous drain current, meeting the minimum current requirement. The device features lower gate charge (25 nC) compared to the IRFBE30SPBF (78 nC), resulting in faster switching characteristics. Operating temperature range, Surface Mount D2PAK package, and RoHS3 compliance are identical. This substitute is appropriate for applications where reduced gate charge and switching losses are beneficial.

IRF540NSTRLPBF (Infineon Technologies)

The IRF540NSTRLPBF differs significantly in voltage rating at 100V Vdss, which is substantially lower than the IRFBE30SPBF at 800V. This device is not suitable as a direct substitute for high-voltage applications. However, it is listed as a manufacturer-identified alternative and may be applicable only in circuits where the lower voltage rating is acceptable. The device offers superior current handling (33A) and lower on-resistance (44mOhm) for low-voltage applications. Extended operating temperature range to 175°C and RoHS3 compliance are maintained.

All three substitute parts are Active in product status with RoHS3 compliance and unlimited moisture sensitivity level (MSL 1), ensuring regulatory and environmental compatibility with the original IRFBE30SPBF.

Frequently Asked Questions (FAQ)

Q: Can the STB7NK80ZT4 replace the IRFBE30SPBF in all applications?

A: The STB7NK80ZT4 maintains the same 800V Vdss rating, Surface Mount D2PAK package, and operating temperature range as the IRFBE30SPBF. The higher continuous drain current (5.2A versus 4.1A) and lower on-resistance (1.8Ohm versus 3Ohm) make it suitable for direct substitution in equivalent or higher-performance applications. Thermal design and gate drive circuitry remain compatible.

Q: What is the primary difference between the FQB4N80TM and the IRFBE30SPBF?

A: Both devices are rated for 800V Vdss and use Surface Mount D2PAK packaging. The FQB4N80TM has a lower gate charge specification (25 nC versus 78 nC), which reduces switching losses and improves switching speed. The continuous drain current is slightly lower at 3.9A versus 4.1A. These differences make the FQB4N80TM suitable for applications where switching efficiency is prioritized.

Q: Why is the IRF540NSTRLPBF listed as a substitute if it has a different voltage rating?

A: The IRF540NSTRLPBF is included as a manufacturer-identified alternative but is not a direct substitute due to its 100V Vdss rating versus the 800V requirement of the IRFBE30SPBF. This part is applicable only in circuit designs where the lower voltage rating is acceptable. It should not be used in applications requiring 800V blocking capability.

Q: Are all substitute parts available in the same packaging?

A: Yes. The IRFBE30SPBF and all three substitute parts use Surface Mount TO-263-3 (D2PAK) packaging with identical pin configuration and thermal tab design. No PCB layout modifications are required for mechanical substitution.

Q: Do the substitute parts meet the same compliance standards as the IRFBE30SPBF?

A: All substitute parts are RoHS3 compliant with unlimited moisture sensitivity level (MSL 1), matching the IRFBE30SPBF compliance profile. All devices are Active in product status, ensuring long-term availability and supply chain stability.

Q: Which substitute part offers the best thermal performance?

A: The STB7NK80ZT4 provides the lowest on-resistance at 1.8Ohm (measured at 2.6A, 10V), resulting in reduced power dissipation and improved thermal efficiency compared to the IRFBE30SPBF at 3Ohm. Both devices are rated for 125W maximum power dissipation at Tc.

Q: Can gate drive voltage be different between the IRFBE30SPBF and its substitutes?

A: All substitute parts are specified for 10V gate drive voltage, matching the IRFBE30SPBF. However, the STB7NK80ZT4 and FQB4N80TM support ±30V maximum gate voltage versus ±20V for the IRFBE30SPBF, providing additional design margin in gate drive circuits.

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