IRFBE30S N-Channel 800V 4.1A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBE30S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-voltage switching applications requiring 125W power dissipation capability.

The IRFBE30S is classified as obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs and field replacements. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance characteristics, and thermal performance.

Key Parameters

Parameter	Value	Specification
Drain-to-Source Voltage (Vdss)	800 V	Maximum rated voltage between drain and source
Continuous Drain Current (Id) @ 25°C	4.1 A	Maximum continuous current at case temperature
On-Resistance (Rds On) @ Id, Vgs	3 Ohm @ 2.5A, 10V	Static drain-source resistance at specified conditions
Gate Threshold Voltage (Vgs(th)) @ Id	4 V @ 250µA	Gate voltage required for specified drain current
Power Dissipation (Max)	125 W	Maximum power at case temperature
Operating Temperature Range	-55°C to 150°C	Junction temperature operating limits
Package Type	TO-263 (D2PAK)	Surface mount package configuration
Gate Charge (Qg) @ Vgs	78 nC @ 10 V	Total gate charge at specified gate voltage
Input Capacitance (Ciss) @ Vds	1300 pF @ 25 V	Input capacitance at specified drain-source voltage

Substitute Part Grouping Explanation

Substitute parts for the IRFBE30S are grouped based on electrical parameter compatibility within the following criteria:

Primary Substitution Criteria:

Drain-to-source voltage (Vdss) equal to or greater than 800V
Continuous drain current (Id) at or above 4.1A
On-resistance (Rds On) characteristics compatible with application requirements
Power dissipation capability at or above 125W
Operating temperature range encompassing -55°C to 150°C
Surface mount TO-263 (D2PAK) package compatibility

Substitution Categories:

Direct Parametric Equivalents: Parts maintaining identical or near-identical electrical specifications across all critical parameters, including voltage rating, current capacity, and thermal characteristics.

Functional Equivalents with Enhanced Performance: Parts exceeding the IRFBE30S specifications in one or more parameters (higher current rating, lower on-resistance, or improved thermal performance) while maintaining voltage compatibility and package form factor.

Voltage-Rated Alternatives: Parts with higher voltage ratings (1000V) that maintain current and power dissipation compatibility, suitable for applications where voltage margin is beneficial.

Current-Enhanced Alternatives: Parts with higher continuous drain current ratings that provide design margin while maintaining the 800V voltage class and D2PAK package.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Power Diss. (W)	Qg (nC)	Ciss (pF)	Temp Range (°C)	Status
IRFBE30S	Vishay Siliconix	800	4.1	3.0 @ 2.5A, 10V	125	78 @ 10V	1300 @ 25V	-55 to 150	Obsolete
IRFBE30SPBF	Vishay Siliconix	800	4.1	3.0 @ 2.5A, 10V	125	78 @ 10V	1300 @ 25V	-55 to 150	Active
STB7NK80ZT4	STMicroelectronics	800	5.2	1.8 @ 2.6A, 10V	125	56 @ 10V	1138 @ 25V	-55 to 150	Active
STB6N80K5	STMicroelectronics	800	4.5	1.6 @ 2.0A, 10V	85	7.5 @ 10V	255 @ 100V	-55 to 150	Active
FQB4N80TM	onsemi	800	3.9	3.6 @ 1.95A, 10V	130	25 @ 10V	880 @ 25V	-55 to 150	Active
IXFA4N100Q	IXYS	1000	4.0	3.0 @ 2.0A, 10V	150	39 @ 10V	1050 @ 25V	-55 to 150	Active
IRF540NSTRLPBF	Infineon Technologies	100	33	0.044 @ 16A, 10V	130	71 @ 10V	1960 @ 25V	-55 to 175	Active

Engineering Selection Recommendations

IRFBE30SPBF (Vishay Siliconix) – Recommended Primary Substitute

The IRFBE30SPBF is the direct parametric equivalent to the IRFBE30S. It maintains identical electrical specifications across all critical parameters: 800V Vdss, 4.1A continuous drain current, 3 Ohm on-resistance, and 125W power dissipation. The primary distinction is product status: IRFBE30SPBF is active and RoHS3 compliant, whereas the original IRFBE30S is obsolete and RoHS non-compliant. This part is available in tube packaging with 2126 units in stock. Pin-for-pin compatibility and identical thermal characteristics ensure direct replacement without circuit modification.

STB7NK80ZT4 (STMicroelectronics) – Enhanced Performance Substitute

The STB7NK80ZT4 operates at the same 800V voltage rating with improved specifications: 5.2A continuous drain current (27% higher than IRFBE30S), reduced on-resistance of 1.8 Ohm (40% lower), and identical 125W power dissipation. Gate charge is reduced to 56 nC, improving switching speed. This device is RoHS3 compliant and active. The enhanced current rating and lower on-resistance provide design margin for thermal and switching performance. Package compatibility is maintained in D2PAK form factor.

STB6N80K5 (STMicroelectronics) – Compact Performance Alternative

The STB6N80K5 maintains 800V voltage rating with 4.5A continuous drain current and significantly reduced on-resistance of 1.6 Ohm. Power dissipation is rated at 85W, which is lower than the IRFBE30S. Gate charge is substantially reduced to 7.5 nC, enabling faster switching. Input capacitance is reduced to 255 pF. This device is suitable for applications where switching speed and thermal efficiency are prioritized. RoHS3 compliant and active status.

FQB4N80TM (onsemi) – Equivalent Alternative

The FQB4N80TM provides 800V voltage rating with 3.9A continuous drain current (marginally below IRFBE30S) and 3.6 Ohm on-resistance. Power dissipation is rated at 130W, exceeding the original specification. Gate charge is reduced to 25 nC. This device is RoHS3 compliant and active. Suitable for applications where thermal headroom is beneficial despite slightly lower current rating.

IXFA4N100Q (IXYS) – Higher Voltage Margin Alternative

The IXFA4N100Q provides a 1000V voltage rating with 4.0A continuous drain current and 3.0 Ohm on-resistance matching the IRFBE30S. Power dissipation is rated at 150W. This device is suitable for applications requiring additional voltage margin or operating in higher voltage environments. RoHS3 compliant and active. Package compatibility is maintained in TO-263AA (IXFA) form factor.

IRF540NSTRLPBF (Infineon Technologies) – Not Recommended for Direct Substitution

The IRF540NSTRLPBF operates at 100V Vdss, which is incompatible with the 800V rating of the IRFBE30S. Although it provides 33A continuous drain current and superior on-resistance characteristics, the voltage rating mismatch makes this device unsuitable for direct substitution in 800V applications. This part is listed in the original substitute list but does not meet the primary voltage compatibility criterion.

Frequently Asked Questions (FAQ)

Q: Can IRFBE30SPBF be used as a direct replacement for IRFBE30S?

A: Yes. The IRFBE30SPBF is electrically and mechanically identical to the IRFBE30S across all specified parameters. Both devices feature 800V Vdss, 4.1A continuous drain current, 3 Ohm on-resistance, and 125W power dissipation. The primary difference is product status: IRFBE30SPBF is active and RoHS3 compliant. No circuit modifications are required for substitution.

Q: What is the key difference between STB7NK80ZT4 and IRFBE30S?

A: The STB7NK80ZT4 maintains the same 800V voltage rating and 125W power dissipation but provides enhanced performance: 5.2A continuous drain current (versus 4.1A), reduced on-resistance of 1.8 Ohm (versus 3.0 Ohm), and lower gate charge of 56 nC (versus 78 nC). These improvements result in better thermal efficiency and faster switching characteristics while maintaining package compatibility.

Q: Is the IRF540NSTRLPBF suitable for replacing IRFBE30S?

A: No. The IRF540NSTRLPBF operates at 100V Vdss, which is fundamentally incompatible with the 800V voltage rating of the IRFBE30S. Although this device offers superior current handling and on-resistance characteristics, it cannot be used in applications designed for 800V operation. Voltage rating mismatch presents a critical design incompatibility.

Q: Can I use IXFA4N100Q in place of IRFBE30S?

A: The IXFA4N100Q can be used as a substitute if the application permits higher voltage operation. It provides 1000V Vdss (versus 800V), 4.0A continuous drain current, and 3.0 Ohm on-resistance. The higher voltage rating offers additional design margin. Package compatibility is maintained in TO-263 form factor. Verify that the higher voltage rating does not introduce unintended circuit behavior.

Q: What are the packaging differences among substitute parts?

A: All substitute parts are housed in TO-263 (D2PAK) or compatible surface mount packages. IRFBE30SPBF is supplied in tube packaging, while STB7NK80ZT4 and STB6N80K5 are supplied in cut tape and digi-reel format. IXFA4N100Q uses TO-263AA (IXFA) package variant. All packages maintain identical pin configuration and thermal characteristics for PCB mounting compatibility.

Q: Why is on-resistance important when selecting a substitute?

A: On-resistance (Rds On) directly affects power dissipation and thermal performance. Lower on-resistance reduces heat generation during operation, improving efficiency and reducing thermal stress on the device and surrounding circuitry. When selecting substitutes, verify that on-resistance characteristics are compatible with thermal design requirements. Parts with lower on-resistance provide design margin but may have different switching characteristics.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed (IRFBE30SPBF, STB7NK80ZT4, STB6N80K5, FQB4N80TM, and IXFA4N100Q) are RoHS3 compliant. The original IRFBE30S is RoHS non-compliant. If RoHS compliance is a design requirement, select from the active substitute parts only.

Q: What is the significance of gate charge (Qg) differences?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge enables faster switching transitions and reduces driver power consumption. STB6N80K5 has significantly lower gate charge (7.5 nC) compared to IRFBE30S (78 nC), resulting in faster switching. Verify that gate driver circuits can accommodate the gate charge characteristics of selected substitutes.

Q: Can I use STB6N80K5 if my application requires 125W power dissipation?

A: STB6N80K5 is rated for 85W power dissipation, which is lower than the IRFBE30S specification of 125W. If your application requires sustained 125W dissipation, STB6N80K5 is not suitable without additional thermal management. Consider STB7NK80ZT4 (125W), FQB4N80TM (130W), or IXFA4N100Q (150W) for applications requiring full power dissipation capability.

Q: What operating temperature range should I verify for substitute selection?

A: All substitute parts maintain the -55°C to 150°C junction temperature range of the IRFBE30S, except IRF540NSTRLPBF which extends to 175°C. Verify that the selected substitute's operating temperature range encompasses your application's thermal environment. Temperature derating curves should be consulted for operation near maximum junction temperature limits.

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