IRFBE30L N-Channel MOSFET 800V 4.1A Equivalent & Substitute Parts

Part Overview

The IRFBE30L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is designed for high-voltage switching applications. The IRFBE30L is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity.

Substiute Parts

IRFBE30L
Vishay SiliconixIn Stock: 2280IRFBE30L Datasheet
IRFBE30L
Current Part
IRFBF20LPBF
Vishay SiliconixIn Stock: 8402IRFBF20LPBF Datasheet
IRFBF20LPBF
Direct
IRFBE30LPBF
Vishay SiliconixIn Stock: 1823IRFBE30LPBF Datasheet
IRFBE30LPBF
Parametric Equivalent

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 800 V
Continuous Drain Current (Id) @ 25°C 4.1 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 78 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 1300 pF @ 25V
Power Dissipation (Max) 125 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA -
Gate Voltage (Vgs Max) ±20 V
Drive Voltage (Max Rds On) 10 V

Substitute Part Grouping Explanation

Substitution of the IRFBE30L is determined by electrical and mechanical compatibility within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Parameters:

  • Drain-to-Source Voltage (Vdss) rating must equal or exceed the original specification
  • Continuous Drain Current (Id) must equal or exceed the original specification
  • On-State Resistance (Rds On) must not exceed the original specification at equivalent test conditions
  • Gate Threshold Voltage (Vgs(th)) must be compatible with existing gate drive circuits
  • Gate Charge (Qg) and Input Capacitance (Ciss) must be compatible with gate driver capabilities
  • Operating temperature range must encompass the original specification

Mechanical Compatibility Parameters:

  • Mounting type must be Through Hole
  • Package must be I2PAK (TO-262-3 Long Leads, TO-262AA)
  • Pin configuration must be identical

The IRFBE30L is listed with two substitute parts: IRFBF20LPBF and IRFBE30LPBF. The IRFBE30LPBF is a parametric equivalent with identical electrical specifications but improved product status and compliance. The IRFBF20LPBF is a direct manufacturer substitute with higher voltage rating but reduced current and power dissipation ratings.

Parameter Comparison

Parameter IRFBE30L (Main) IRFBE30LPBF (Parametric Equivalent) IRFBF20LPBF (Direct Substitute) Unit
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix -
FET Type N-Channel N-Channel N-Channel -
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 800 800 900 V
Continuous Drain Current (Id) @ 25°C 4.1 4.1 1.7 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 3 3 8 Ohm @ 2.5A, 10V / @ 1A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 4 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 78 78 38 nC @ 10V
Gate Voltage (Vgs Max) ±20 ±20 ±20 V
Input Capacitance (Ciss Max) @ Vds 1300 1300 490 pF @ 25V
Power Dissipation (Max) 125 125 54 W (Tc)
Operating Temperature Range -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole -
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA -
Drive Voltage (Max Rds On) 10 10 10 V
Product Status Obsolete Active Active -
RoHS Status RoHS non-compliant ROHS3 Compliant ROHS3 Compliant -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited) -

Engineering Selection Recommendations

IRFBE30LPBF - Parametric Equivalent:

The IRFBE30LPBF is the primary substitute for the IRFBE30L. This part maintains identical electrical specifications across all critical parameters: 800V Vdss, 4.1A continuous drain current, 3 Ohm Rds On, 78 nC gate charge, and 1300 pF input capacitance. The IRFBE30LPBF is classified as Active product status, ensuring ongoing availability and supply chain support. The part is ROHS3 compliant, addressing regulatory requirements that the obsolete IRFBE30L does not meet. The identical packaging (TO-262-3 Long Leads, I2PAK) and pin configuration enable direct board-level substitution without design modification. The IRFBE30LPBF is suitable for all applications previously served by the IRFBE30L.

IRFBF20LPBF - Direct Manufacturer Substitute:

The IRFBF20LPBF is designated as a direct manufacturer substitute but presents reduced electrical performance in current and power handling. This part features a higher Vdss rating of 900V but reduced continuous drain current of 1.7A (compared to 4.1A) and reduced power dissipation of 54W (Tc) (compared to 125W). The on-state resistance is 8 Ohm at 1A, 10V, which is higher than the 3 Ohm specification of the IRFBE30L. Gate charge is reduced to 38 nC, and input capacitance is reduced to 490 pF. The IRFBF20LPBF is Active product status and ROHS3 compliant. This substitute is applicable only to applications where the reduced current and power ratings are acceptable and where the higher voltage rating provides design margin. The IRFBF20LPBF is not suitable for applications requiring the full 4.1A current capability of the IRFBE30L.

Frequently Asked Questions (FAQ)

Q: Can the IRFBE30LPBF be used as a direct replacement for the IRFBE30L without circuit modification?

A: Yes. The IRFBE30LPBF maintains identical electrical specifications and packaging. No circuit modification is required for substitution. The parts are pin-compatible and functionally equivalent.

Q: What is the primary difference between the IRFBE30L and IRFBE30LPBF?

A: The IRFBE30L is obsolete and RoHS non-compliant. The IRFBE30LPBF is Active product status and ROHS3 compliant. Electrical specifications and packaging are identical.

Q: Can the IRFBF20LPBF replace the IRFBE30L in all applications?

A: No. The IRFBF20LPBF has reduced continuous drain current (1.7A versus 4.1A) and reduced power dissipation (54W versus 125W). Substitution is limited to applications where these reduced ratings are acceptable. Applications requiring the full 4.1A current capability cannot use the IRFBF20LPBF.

Q: Are all three parts packaged identically?

A: Yes. All three parts use the Through Hole I2PAK package (TO-262-3 Long Leads, TO-262AA). Pin configuration is identical across all parts.

Q: What is the gate threshold voltage compatibility across these parts?

A: All three parts have identical gate threshold voltage specifications of 4V @ 250µA. Gate drive circuits designed for the IRFBE30L are compatible with both substitute parts.

Q: How do the gate charge specifications compare?

A: The IRFBE30L and IRFBE30LPBF both have 78 nC gate charge @ 10V. The IRFBF20LPBF has reduced gate charge of 38 nC @ 10V. Gate driver circuits must be evaluated for compatibility with the reduced gate charge of the IRFBF20LPBF.

Q: Are there RoHS compliance differences between the substitute parts?

A: Yes. The IRFBE30L is RoHS non-compliant. Both IRFBE30LPBF and IRFBF20LPBF are ROHS3 compliant. For applications requiring RoHS compliance, either substitute part is acceptable.

Q: What is the operating temperature range for all three parts?

A: All three parts operate across the identical temperature range of -55°C to 150°C (TJ).

Q: How do the input capacitance values affect circuit design?

A: The IRFBE30L and IRFBE30LPBF both have 1300 pF input capacitance @ 25V. The IRFBF20LPBF has reduced input capacitance of 490 pF @ 25V. Gate driver circuits and switching speed characteristics must be evaluated when substituting with the IRFBF20LPBF.

Q: Is the IRFBE30LPBF available in the same packaging options as the IRFBE30L?

A: Yes. The IRFBE30LPBF is supplied in Tube packaging, maintaining the same I2PAK Through Hole configuration as the IRFBE30L.

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