IRFBE30 N-Channel MOSFET 800V 4.1A Equivalent & Substitute Parts

Part Overview

The IRFBE30 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 800V drain-to-source voltage with 4.1A continuous drain current at 25°C. The device is housed in a Through Hole TO-220AB package and dissipates up to 125W at the case temperature. The IRFBE30 is classified as obsolete, which necessitates identification of equivalent and substitute components for ongoing system support and new design implementations. Direct replacements and parametric alternatives are available from both the original manufacturer and alternative suppliers.

Substiute Parts

IRFBE30
Vishay SiliconixIn Stock: 1552IRFBE30 Datasheet
IRFBE30
Current Part
IRFBE30PBF
Vishay SiliconixIn Stock: 29410IRFBE30PBF Datasheet
IRFBE30PBF
Direct
IRFPE30PBF
Vishay SiliconixIn Stock: 3458IRFPE30PBF Datasheet
IRFPE30PBF
Parametric Equivalent
IXFP4N100Q
IXYSIn Stock: 1487IXFP4N100Q Datasheet
IXFP4N100Q
MFR Recommended
STP3N80K5
STMicroelectronicsIn Stock: 2376STP3N80K5 Datasheet
STP3N80K5
MFR Recommended
STP4N80K5
STMicroelectronicsIn Stock: 1907STP4N80K5 Datasheet
STP4N80K5
MFR Recommended
STP4NK80Z
STMicroelectronicsIn Stock: 6377STP4NK80Z Datasheet
STP4NK80Z
MFR Recommended
STP5NK80Z
STMicroelectronicsIn Stock: 19251STP5NK80Z Datasheet
STP5NK80Z
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 4.1 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 3 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 78 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25V
Power Dissipation (Max) 125 W (Tc)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitute parts for the IRFBE30 are classified into two categories based on electrical and mechanical compatibility:

Direct Manufacturer Equivalent: Parts that maintain identical electrical specifications and package form factor, differing only in product status or packaging configuration.

Parametric Equivalents: Parts that satisfy the core electrical requirements (Vdss, Id, Rds On, operating temperature range, and Through Hole mounting) but may differ in secondary parameters such as gate charge, input capacitance, or power dissipation rating. These parts are suitable for applications where the primary voltage and current ratings are the limiting design factors.

Substitution Criteria:

  • Drain to Source Voltage (Vdss): 800V minimum
  • Continuous Drain Current (Id) @ 25°C: 4.1A minimum
  • Rds On (Max) @ 10V: 3.5 Ohm maximum
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Through Hole
  • Package: TO-220 or compatible form factor

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (Ohm) Power Dissipation (W) Package Product Status RoHS Status
IRFBE30 Vishay Siliconix 800 4.1 3.0 125 TO-220AB Obsolete Non-compliant
IRFBE30PBF Vishay Siliconix 800 4.1 3.0 125 TO-220AB Active ROHS3 Compliant
IRFPE30PBF Vishay Siliconix 800 4.1 3.0 125 TO-247AC Active ROHS3 Compliant
STP5NK80Z STMicroelectronics 800 4.3 2.4 110 TO-220 Active ROHS3 Compliant
STP4NK80Z STMicroelectronics 800 3.0 3.5 80 TO-220 Active ROHS3 Compliant
STP4N80K5 STMicroelectronics 800 3.0 2.5 60 TO-220 Active ROHS3 Compliant
STP3N80K5 STMicroelectronics 800 2.5 3.5 60 TO-220 Not For New Designs ROHS3 Compliant
IXFP4N100Q IXYS 1000 4.0 3.0 150 TO-220-3 Not For New Designs ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFBE30PBF

The IRFBE30PBF is the direct equivalent of the obsolete IRFBE30. It maintains identical electrical specifications across all critical parameters: 800V Vdss, 4.1A continuous drain current, 3.0 Ohm Rds On, and 125W power dissipation. The IRFBE30PBF is classified as Active product status with ROHS3 compliance and REACH Affected designation. This part is available in Tube packaging with 29,400 units in stock, providing immediate availability for production requirements. The IRFBE30PBF is suitable for direct substitution in existing designs without circuit modification.

Secondary Recommendation: STP5NK80Z

The STP5NK80Z from STMicroelectronics is an active parametric equivalent offering superior electrical performance. It provides 800V Vdss with 4.3A continuous drain current (exceeding the IRFBE30 specification by 0.2A) and reduced Rds On of 2.4 Ohm at 2.15A, 10V (compared to 3.0 Ohm). Power dissipation is rated at 110W. The STP5NK80Z is ROHS3 compliant and available with 19,225 units in stock. This part is suitable for applications where improved thermal performance or lower on-resistance is beneficial.

Alternative for Reduced Current Applications: STP4N80K5

The STP4N80K5 from STMicroelectronics is classified as Active and provides 800V Vdss with 3.0A continuous drain current. This part is suitable for applications where the full 4.1A rating of the IRFBE30 is not required. The STP4N80K5 offers 2.5 Ohm Rds On at 1.5A, 10V with ROHS3 compliance.

Package Variant: IRFPE30PBF

The IRFPE30PBF is an active equivalent with identical electrical specifications to the IRFBE30PBF but housed in a TO-247AC package instead of TO-220AB. This part is suitable for applications requiring the larger TO-247 form factor for improved thermal management or mechanical mounting requirements. The IRFPE30PBF is ROHS3 compliant and available with 3,400 units in stock.

Not Recommended for New Designs:

The IXFP4N100Q and STP3N80K5 are classified as "Not For New Designs" and should not be selected for new product development. The IXFP4N100Q, while offering higher voltage rating (1000V), has reduced continuous drain current (4.0A) and is from a manufacturer series designated as obsolete. The STP3N80K5 provides only 2.5A continuous drain current, below the IRFBE30 specification.

Frequently Asked Questions (FAQ)

Q: Can the IRFBE30PBF be used as a direct replacement for the IRFBE30?

A: Yes. The IRFBE30PBF is electrically and mechanically identical to the IRFBE30 across all specified parameters. The primary differences are product status (Active vs. Obsolete) and RoHS compliance (ROHS3 Compliant vs. Non-compliant). The IRFBE30PBF is suitable for direct substitution without circuit modification.

Q: What is the difference between the IRFBE30PBF and IRFPE30PBF?

A: Both parts are manufactured by Vishay Siliconix and maintain identical electrical specifications. The IRFBE30PBF is packaged in TO-220AB, while the IRFPE30PBF is packaged in TO-247AC. The TO-247 package provides a larger form factor with improved thermal characteristics. Selection between these parts depends on mechanical mounting requirements and thermal management needs of the application.

Q: Is the STP5NK80Z suitable for applications designed for the IRFBE30?

A: Yes. The STP5NK80Z meets or exceeds all critical electrical parameters of the IRFBE30. It provides 800V Vdss, 4.3A continuous drain current (versus 4.1A), and lower Rds On of 2.4 Ohm (versus 3.0 Ohm). The STP5NK80Z is suitable for direct substitution and offers improved performance characteristics. However, gate charge and input capacitance differ, which may affect switching speed in some circuit topologies.

Q: Why is the IXFP4N100Q not recommended as a substitute?

A: The IXFP4N100Q is classified as "Not For New Designs" by the manufacturer. Additionally, while it provides higher voltage rating (1000V), the continuous drain current is reduced to 4.0A, which is below the IRFBE30 specification of 4.1A. New designs should utilize active product status parts such as IRFBE30PBF or STP5NK80Z.

Q: What are the key parameters that determine substitutability for the IRFBE30?

A: Substitutability is determined by the following parameters: Drain to Source Voltage (Vdss) of 800V minimum, continuous drain current (Id) of 4.1A minimum at 25°C, Rds On (Max) of 3.5 Ohm or lower at 10V gate voltage, operating temperature range of -55°C to 150°C, Through Hole mounting type, and TO-220 or compatible package form factor. Parts meeting these criteria are electrically compatible with the IRFBE30.

Q: Can the STP4N80K5 be used in place of the IRFBE30?

A: The STP4N80K5 provides 800V Vdss and 3.0A continuous drain current. While it meets the voltage requirement, the current rating is below the IRFBE30 specification of 4.1A. The STP4N80K5 is suitable only for applications where the actual circuit current requirement does not exceed 3.0A. For applications requiring the full 4.1A rating, the STP5NK80Z or IRFBE30PBF should be selected.

Q: What is the inventory status of substitute parts?

A: IRFBE30PBF has 29,400 units in stock. STP5NK80Z has 19,225 units in stock. STP4NK80Z has 6,318 units in stock. IRFPE30PBF has 3,400 units in stock. STP4N80K5 has 1,874 units in stock. STP3N80K5 has 2,352 units in stock. IXFP4N100Q has 1,380 units in stock. The IRFBE30PBF offers the highest inventory availability for immediate procurement.

Q: Are all substitute parts RoHS compliant?

A: The IRFBE30 is RoHS non-compliant. All recommended substitute parts (IRFBE30PBF, IRFPE30PBF, STP5NK80Z, STP4NK80Z, STP4N80K5, STP3N80K5, and IXFP4N100Q) are ROHS3 compliant. This compliance status should be verified against specific system requirements and regulatory obligations.

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