IRFBC40STRR N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is classified as Active product status. This component is commonly used in switching applications requiring high-voltage, moderate-current performance with low on-resistance characteristics.

Equivalent and substitute parts are identified based on matching or exceeding critical electrical parameters including drain-to-source voltage rating, continuous drain current capability, on-resistance characteristics, and compatible surface mount packaging. The substitution analysis accounts for product availability, compliance certifications, and packaging variants.

Substiute Parts

IRFBC40STRR
Vishay SiliconixIn Stock: 822IRFBC40STRR Datasheet
IRFBC40STRR
Current Part
IRFBC40STRLPBF
Vishay SiliconixIn Stock: 2219IRFBC40STRLPBF Datasheet
IRFBC40STRLPBF
Parametric Equivalent
FQB7N60TM
onsemiIn Stock: 17349FQB7N60TM Datasheet
FQB7N60TM
MFR Recommended
R6004KNJTL
Rohm SemiconductorIn Stock: 1111R6004KNJTL Datasheet
R6004KNJTL
MFR Recommended
R6008FNJTL
Rohm SemiconductorIn Stock: 4309R6008FNJTL Datasheet
R6008FNJTL
MFR Recommended
STB6N60M2
STMicroelectronicsIn Stock: 1653STB6N60M2 Datasheet
STB6N60M2
MFR Recommended
STD7ANM60N
STMicroelectronicsIn Stock: 1615STD7ANM60N Datasheet
STD7ANM60N
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.2 A (Tc)
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10V
Vgs (Max) ±20 V
Power Dissipation (Max) 130 W (Tc)
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK

Substitute Part Grouping Explanation

Substitute parts for the IRFBC40STRR are grouped based on the following substitution criteria:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 6.2A or greater
  • On-Resistance (Rds On): 1.2 Ohm or lower at specified gate voltage
  • Gate Charge (Qg): Lower values preferred for switching efficiency
  • Maximum Gate Voltage (Vgs): ±20V or greater
  • Operating Temperature Range: -55°C to 150°C or greater
  • Surface Mount Packaging: TO-263 (D2PAK) or compatible variants

Packaging Compatibility: All substitute parts maintain TO-263 (D2PAK) surface mount packaging or functionally equivalent LPTS/DPAK variants, ensuring mechanical and thermal compatibility with existing PCB layouts.

Compliance Considerations: RoHS3 compliance status and REACH unaffected designation are noted where applicable. The main part IRFBC40STRR is RoHS non-compliant; compliant alternatives are available.

Parameter Comparison

Parameter IRFBC40STRR IRFBC40STRLPBF FQB7N60TM R6004KNJTL R6008FNJTL STB6N60M2 STD7ANM60N
Manufacturer Vishay Siliconix Vishay Siliconix onsemi Rohm Semiconductor Rohm Semiconductor STMicroelectronics STMicroelectronics
Vdss (V) 600 600 600 600 600 600 600
Id @ 25°C (A) 6.2 6.2 7.4 4 8 4.5 5
Rds On (Max) (Ohm) 1.2 1.2 1 0.98 0.95 1.2 0.9
Qg (Max) (nC) 60 60 38 10.2 20 8 14
Vgs (Max) (V) ±20 ±20 ±30 ±20 ±30 ±25 ±25
Power Dissipation (Max) (W) 130 (Tc) 130 (Tc) 142 (Tc) 58 (Tc) 50 (Tc) 60 (Tc) 45 (Tc)
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Package TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) D2PAK DPAK
Product Status Active Active Obsolete Active Active Active Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Parametric Equivalent: The IRFBC40STRLPBF is a direct parametric equivalent to the IRFBC40STRR, offering identical electrical specifications with the distinction of Tape & Reel packaging and ROHS3 compliance. This part is suitable for applications requiring regulatory compliance and is available in higher inventory quantities (2200 pcs).

Higher Current Capability Alternatives: The FQB7N60TM (onsemi) provides 7.4A continuous drain current with improved on-resistance (1.0 Ohm) and reduced gate charge (38 nC), offering enhanced switching efficiency. However, this part carries Obsolete product status and should be evaluated for long-term supply chain viability.

The R6008FNJTL (Rohm Semiconductor) delivers 8A continuous drain current with superior on-resistance (0.95 Ohm) and lower gate charge (20 nC), supporting higher current applications. This part maintains Active status and ROHS3 compliance.

Reduced Current Alternatives: The R6004KNJTL (Rohm Semiconductor) and STB6N60M2 (STMicroelectronics) provide reduced current ratings (4A and 4.5A respectively) with lower power dissipation. These parts are suitable for applications where the full 6.2A capability is not required.

The STD7ANM60N (STMicroelectronics) offers 5A continuous drain current with automotive-grade qualification (AEC-Q101) and DPAK packaging, suitable for automotive applications requiring regulatory certification.

Compliance and Availability: All substitute parts except FQB7N60TM maintain Active product status. ROHS3 compliance is available across all alternatives except the main part. Inventory availability ranges from 1037 to 17293 units across substitute options.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC40STRLPBF be used as a direct replacement for the IRFBC40STRR?

A: Yes. The IRFBC40STRLPBF is a parametric equivalent with identical electrical specifications. The primary differences are packaging format (Tape & Reel versus bulk) and RoHS3 compliance status. Both parts are rated for 600V, 6.2A, and feature identical on-resistance and gate charge characteristics.

Q: What is the difference between the IRFBC40STRR and FQB7N60TM?

A: The FQB7N60TM provides higher continuous drain current (7.4A versus 6.2A), lower on-resistance (1.0 Ohm versus 1.2 Ohm), and reduced gate charge (38 nC versus 60 nC). Both maintain 600V Vdss rating and TO-263 packaging. The FQB7N60TM is classified as Obsolete, which may impact long-term availability.

Q: Are the DPAK and D2PAK packages interchangeable?

A: DPAK and D2PAK are distinct surface mount packages with different footprints and thermal characteristics. While both are three-lead packages with tab configurations, PCB layout modifications are required for substitution. The STD7ANM60N uses DPAK packaging and requires layout verification before implementation.

Q: Which substitute part offers the best on-resistance performance?

A: The STD7ANM60N provides the lowest on-resistance at 0.9 Ohm, followed by R6008FNJTL at 0.95 Ohm. Lower on-resistance reduces power dissipation and heat generation during switching operations. Selection depends on current requirements and thermal management capabilities.

Q: Is RoHS3 compliance required for my application?

A: RoHS3 compliance is mandatory for products sold in the European Union and many other regulated markets. The IRFBC40STRR is RoHS non-compliant. All substitute parts listed except the main part are ROHS3 compliant, making them suitable for regulated applications.

Q: What is the significance of gate charge (Qg) in MOSFET selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and enable faster switching frequencies. The IRFBC40STRR has 60 nC gate charge; alternatives range from 8 nC to 60 nC depending on the part selected.

Q: Can I use a lower current-rated part as a substitute?

A: Substitution with lower current-rated parts is possible only if the application's maximum drain current does not exceed the substitute part's rating. The R6004KNJTL (4A) and STB6N60M2 (4.5A) are suitable only for applications requiring less than their respective current ratings. Exceeding rated current causes device failure.

Q: What is the automotive qualification significance of the STD7ANM60N?

A: The STD7ANM60N carries AEC-Q101 automotive qualification, indicating compliance with automotive industry reliability and quality standards. This part is suitable for automotive applications requiring certified components. Non-automotive parts do not carry this certification.

Q: How does power dissipation affect part selection?

A: Power dissipation (Tc rating) indicates the maximum heat the device can safely dissipate at the case temperature. The IRFBC40STRR is rated for 130W (Tc). Substitute parts range from 45W to 142W. Higher power dissipation capability supports higher current or higher frequency switching applications with adequate thermal management.

Request Quote (Ships tomorrow)