IRFBC40STRL N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40STRL is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage and 6.2A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Identification of equivalent and substitute parts is necessary to support ongoing design requirements, procurement continuity, and system maintenance where the original part is no longer available through standard distribution channels.

Substiute Parts

IRFBC40STRL
Vishay SiliconixIn Stock: 724IRFBC40STRL Datasheet
IRFBC40STRL
Current Part
IRFBC40STRLPBF
Vishay SiliconixIn Stock: 2219IRFBC40STRLPBF Datasheet
IRFBC40STRLPBF
Parametric Equivalent
IRFBC40STRR
Vishay SiliconixIn Stock: 822IRFBC40STRR Datasheet
IRFBC40STRR
Parametric Equivalent
FQB7N60TM
onsemiIn Stock: 17349FQB7N60TM Datasheet
FQB7N60TM
MFR Recommended
IXTA7N60P
IXYSIn Stock: 1264IXTA7N60P Datasheet
IXTA7N60P
MFR Recommended
R6004ENJTL
Rohm SemiconductorIn Stock: 769R6004ENJTL Datasheet
R6004ENJTL
MFR Recommended
R6004KNJTL
Rohm SemiconductorIn Stock: 1111R6004KNJTL Datasheet
R6004KNJTL
MFR Recommended
STB6N60M2
STMicroelectronicsIn Stock: 1653STB6N60M2 Datasheet
STB6N60M2
MFR Recommended
STB9NK60ZT4
STMicroelectronicsIn Stock: 3232STB9NK60ZT4 Datasheet
STB9NK60ZT4
MFR Recommended
STD7ANM60N
STMicroelectronicsIn Stock: 1615STD7ANM60N Datasheet
STD7ANM60N
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 600 V
Continuous Drain Current (Id) @ 25°C 6.2 A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs 1.2 Ohm @ 3.7A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id 4 V @ 250µA
Gate Charge (Qg Max) @ Vgs 60 nC @ 10V
Input Capacitance (Ciss Max) @ Vds 1300 pF @ 25V
Power Dissipation (Max) 3.1 / 130 W (Ta) / W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Package Type TO-263 (D2PAK) Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRFBC40STRL are classified into two categories based on electrical and mechanical compatibility:

Parametric Equivalents maintain identical or near-identical electrical specifications and package form factor. These parts satisfy direct replacement requirements without circuit redesign:

  • Drain-to-source voltage: 600V
  • Continuous drain current: 6.2A or higher
  • On-state resistance: 1.2 Ohm or lower
  • Package: TO-263 (D2PAK) surface mount
  • Operating temperature: -55°C to 150°C

Manufacturer Recommended Alternatives provide functional equivalence with relaxed current or resistance specifications. These parts operate within the same voltage class and package family but may require circuit validation for specific current or thermal requirements:

  • Drain-to-source voltage: 600V
  • Continuous drain current: 4A to 7.4A
  • On-state resistance: 0.9 to 1.2 Ohm
  • Package: TO-263 (D2PAK) or DPAK surface mount
  • Operating temperature: -55°C to 150°C

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On Max (Ohm) Qg Max (nC) Ciss Max (pF) Package Product Status RoHS Status
IRFBC40STRL Vishay Siliconix 600 6.2 1.2 60 1300 TO-263 (D2PAK) Obsolete Non-compliant
IRFBC40STRLPBF Vishay Siliconix 600 6.2 1.2 60 1300 TO-263 (D2PAK) Active ROHS3 Compliant
IRFBC40STRR Vishay Siliconix 600 6.2 1.2 60 1300 TO-263 (D2PAK) Active Non-compliant
FQB7N60TM onsemi 600 7.4 1.0 38 1430 TO-263 (D2PAK) Obsolete ROHS3 Compliant
IXTA7N60P IXYS 600 7.0 1.1 20 1080 TO-263AA Active ROHS3 Compliant
R6004ENJTL Rohm Semiconductor 600 4.0 0.98 15 250 LPTS Active ROHS3 Compliant
R6004KNJTL Rohm Semiconductor 600 4.0 0.98 10.2 280 LPTS Active ROHS3 Compliant
STB6N60M2 STMicroelectronics 600 4.5 1.2 8 232 D2PAK Active ROHS3 Compliant
STB9NK60ZT4 STMicroelectronics 600 7.0 0.95 53 1110 D2PAK Active ROHS3 Compliant
STD7ANM60N STMicroelectronics 600 5.0 0.9 14 363 DPAK Active ROHS3 Compliant

Engineering Selection Recommendations

Direct Parametric Equivalents (Preferred for Direct Replacement)

IRFBC40STRLPBF is the primary equivalent part. It maintains identical electrical specifications to the IRFBC40STRL with 600V Vdss, 6.2A continuous drain current, and 1.2 Ohm on-state resistance. The IRFBC40STRLPBF is in active product status with ROHS3 compliance and is available in tape and reel packaging. This part provides the highest compatibility for direct substitution without circuit modification.

IRFBC40STRR is an alternative equivalent from Vishay Siliconix with identical electrical parameters and active product status. This part is non-RoHS compliant and should be selected only when RoHS compliance is not a system requirement.

Higher Current Alternatives (For Applications Tolerant of Increased Current Capacity)

FQB7N60TM (onsemi) provides 7.4A continuous drain current with 1.0 Ohm on-state resistance, both superior to the original specification. This part is ROHS3 compliant but carries obsolete product status. The increased current capacity and lower on-state resistance reduce thermal dissipation in high-current applications.

IXTA7N60P (IXYS) delivers 7.0A continuous drain current with 1.1 Ohm on-state resistance in active product status with ROHS3 compliance. The Polar series device is packaged in TO-263AA and offers improved thermal performance compared to the original part.

STB9NK60ZT4 (STMicroelectronics) provides 7.0A continuous drain current with 0.95 Ohm on-state resistance in the SuperMESH™ series. This part is ROHS3 compliant and active, offering the lowest on-state resistance among all alternatives.

Lower Current Alternatives (For Current-Limited Applications)

R6004ENJTL and R6004KNJTL (Rohm Semiconductor) are rated for 4.0A continuous drain current with 0.98 Ohm on-state resistance. Both parts are ROHS3 compliant and active. These alternatives are suitable for applications where the 6.2A rating of the original part exceeds system requirements. R6004KNJTL includes automotive-grade qualification (AEC-Q101) and extended temperature range documentation.

STB6N60M2 (STMicroelectronics) provides 4.5A continuous drain current with 1.2 Ohm on-state resistance in the MDmesh™ II Plus series. This part is ROHS3 compliant and active, offering a mid-range current option.

STD7ANM60N (STMicroelectronics) delivers 5.0A continuous drain current with 0.9 Ohm on-state resistance in DPAK package. This part is ROHS3 compliant, active, and carries automotive-grade qualification (AEC-Q101). The DPAK package differs from the original TO-263 (D2PAK) and requires PCB layout modification.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40STRLPBF be used as a direct replacement for IRFBC40STRL?

A: Yes. IRFBC40STRLPBF is a parametric equivalent with identical electrical specifications (600V Vdss, 6.2A Id, 1.2 Ohm Rds On). The primary difference is product status (active versus obsolete) and RoHS compliance (ROHS3 versus non-compliant). Both parts use the same TO-263 (D2PAK) package and pinout. No circuit modification is required.

Q: What is the difference between TO-263 (D2PAK) and DPAK packages?

A: TO-263 (D2PAK) and DPAK are distinct surface mount packages with different footprints and thermal characteristics. TO-263 (D2PAK) is a three-lead package with a larger tab for improved heat dissipation. DPAK (TO-252) is a smaller three-lead package. Parts using DPAK (such as STD7ANM60N) require different PCB layout and cannot be directly substituted without board redesign.

Q: Can I use a higher current-rated part like FQB7N60TM or IXTA7N60P in place of IRFBC40STRL?

A: Yes, with circuit validation. FQB7N60TM (7.4A) and IXTA7N60P (7.0A) both exceed the original 6.2A specification and maintain 600V Vdss. Both parts are pin-compatible in TO-263 (D2PAK) packages. The increased current capacity and lower on-state resistance reduce thermal dissipation. Verify that gate drive circuitry and thermal management remain adequate for your application.

Q: Are lower current alternatives like R6004ENJTL suitable for my application?

A: Lower current alternatives are suitable only if your circuit operates below the reduced current rating. R6004ENJTL and R6004KNJTL are rated for 4.0A continuous drain current, which is 35% lower than the original 6.2A specification. Use these parts only when application current requirements are confirmed to remain below 4.0A. Package differences (LPTS versus TO-263 D2PAK) also require PCB layout modification.

Q: What does RoHS compliance mean for MOSFET selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates the part does not contain lead, cadmium, mercury, or other restricted materials. ROHS3 compliant parts meet current EU and industry standards. If your application or end-market requires RoHS compliance, select only parts marked as ROHS3 compliant. IRFBC40STRL is non-compliant; IRFBC40STRLPBF is ROHS3 compliant.

Q: Why is IRFBC40STRL marked as obsolete?

A: Obsolete product status indicates the manufacturer has discontinued production and removed the part from active distribution. IRFBC40STRLPBF (the RoHS-compliant variant) remains in active production and is the recommended replacement. Existing inventory of IRFBC40STRL may be available through secondary distributors, but long-term availability is not guaranteed.

Q: Can I substitute STD7ANM60N (DPAK) for IRFBC40STRL (TO-263 D2PAK)?

A: Electrical substitution is possible; STD7ANM60N meets the 600V voltage requirement and provides 5.0A continuous drain current with superior 0.9 Ohm on-state resistance. However, DPAK and TO-263 (D2PAK) packages have different footprints, pinouts, and thermal characteristics. PCB layout redesign is required. This substitution is not recommended for direct board-level replacement without engineering review.

Q: What is the significance of gate charge (Qg) differences among alternatives?

A: Gate charge (Qg) affects gate drive circuit design and switching speed. Lower Qg values (such as IXTA7N60P at 20 nC) require less gate drive energy and enable faster switching. Higher Qg values (such as IRFBC40STRL at 60 nC) require more robust gate drive circuitry. If your gate drive circuit is optimized for the original 60 nC specification, verify compatibility with lower Qg alternatives to ensure stable switching performance.

Q: Are there automotive-qualified alternatives available?

A: Yes. R6004KNJTL and STD7ANM60N both carry AEC-Q101 automotive qualification. These parts are suitable for automotive applications requiring formal qualification documentation. Both are ROHS3 compliant and active. However, R6004KNJTL is rated for 4.0A (lower than original) and STD7ANM60N uses DPAK package (different from original TO-263 D2PAK).

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