IRFBC40S N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-voltage switching applications. The IRFBC40S carries an obsolete product status, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage ratings, current handling, gate charge characteristics, and thermal performance while accommodating available packaging and compliance certifications.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	1.2	Ohm @ 3.7A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	60	nC @ 10V
Input Capacitance (Ciss Max) @ Vds	1300	pF @ 25V
Power Dissipation (Max)	3.1 / 130	W (Ta) / W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	TO-263 (D2PAK)
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitute parts for the IRFBC40S are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must support minimum 6.2A at 25°C
On-State Resistance (Rds On): Must not exceed 1.2 Ohm at specified gate voltage
Gate Charge (Qg): Lower values indicate improved switching performance
Input Capacitance (Ciss): Affects gate drive requirements
Operating Temperature Range: Must support -55°C to 150°C
Mounting Type: Surface mount TO-263 (D2PAK) package family
Package Compatibility: TO-263-3, D2PAK (2 Leads + Tab), or TO-263AB variants

Substitute parts are grouped into two categories:

Category 1 - Direct Parametric Equivalents: Parts with identical or superior electrical specifications and active product status (IRFBC40SPBF). These parts maintain the same voltage, current, and resistance characteristics as the original IRFBC40S.

Category 2 - Functional Alternatives: Parts with comparable or enhanced performance characteristics that operate within the same voltage class and package family but may have different current ratings, gate charge, or thermal specifications (FQB7N60TM, IXTA7N60P, STB6N60M2, STB9NK60ZT4, STD7ANM60N, R6004ENJTL, R6004KNJTL). These parts are suitable for applications where the IRFBC40S specifications can be met or exceeded.

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (Ohm)	Qg Max (nC)	Ciss Max (pF)	Power Dissipation (W)	Product Status	Package
IRFBC40S	Vishay Siliconix	600	6.2	1.2 @ 3.7A, 10V	60 @ 10V	1300 @ 25V	3.1 (Ta) / 130 (Tc)	Obsolete	TO-263 (D2PAK)
IRFBC40SPBF	Vishay Siliconix	600	6.2	1.2 @ 3.7A, 10V	60 @ 10V	1300 @ 25V	3.1 (Ta) / 130 (Tc)	Active	TO-263 (D2PAK)
FQB7N60TM	onsemi	600	7.4	1.0 @ 3.7A, 10V	38 @ 10V	1430 @ 25V	3.13 (Ta) / 142 (Tc)	Obsolete	TO-263 (D2PAK)
IXTA7N60P	IXYS	600	7.0	1.1 @ 3.5A, 10V	20 @ 10V	1080 @ 25V	150 (Tc)	Active	TO-263AA
R6004ENJTL	Rohm Semiconductor	600	4.0	0.98 @ 1.5A, 10V	15 @ 10V	250 @ 25V	40 (Tc)	Active	LPTS
R6004KNJTL	Rohm Semiconductor	600	4.0	0.98 @ 1.5A, 10V	10.2 @ 10V	280 @ 25V	58 (Tc)	Active	LPTS
STB6N60M2	STMicroelectronics	600	4.5	1.2 @ 2.25A, 10V	8 @ 10V	232 @ 100V	60 (Tc)	Active	D2PAK
STB9NK60ZT4	STMicroelectronics	600	7.0	0.95 @ 3.5A, 10V	53 @ 10V	1110 @ 25V	125 (Tc)	Active	D2PAK
STD7ANM60N	STMicroelectronics	600	5.0	0.9 @ 2.5A, 10V	14 @ 10V	363 @ 50V	45 (Tc)	Active	DPAK

Engineering Selection Recommendations

Primary Recommendation: IRFBC40SPBF

The IRFBC40SPBF is the direct parametric equivalent to the IRFBC40S. It maintains identical electrical specifications across all critical parameters: 600V Vdss, 6.2A continuous drain current, 1.2 Ohm Rds On, and 60 nC gate charge. The IRFBC40SPBF carries active product status and is RoHS3 compliant, providing long-term availability and regulatory compliance. This part is the preferred direct replacement for the obsolete IRFBC40S.

Secondary Recommendations for Enhanced Performance:

STB9NK60ZT4 (STMicroelectronics): Offers superior on-state resistance (0.95 Ohm vs. 1.2 Ohm) and higher continuous drain current (7A vs. 6.2A) while maintaining 600V Vdss. Active product status and RoHS3 compliance. Suitable for applications requiring improved efficiency and thermal performance.

IXTA7N60P (IXYS): Provides 7A continuous drain current with 1.1 Ohm Rds On and significantly lower gate charge (20 nC vs. 60 nC), enabling faster switching. Active product status and RoHS3 compliant. Recommended for high-frequency switching applications.

FQB7N60TM (onsemi): Delivers 7.4A continuous drain current with 1.0 Ohm Rds On and reduced gate charge (38 nC). Suitable for applications requiring higher current capacity, though product status is obsolete.

Alternative Options for Current-Limited Applications:

STB6N60M2 (STMicroelectronics): Rated for 4.5A continuous drain current with 1.2 Ohm Rds On and minimal gate charge (8 nC). Active product status and RoHS3 compliant. Suitable for lower-current applications where the full 6.2A capability is not required.

STD7ANM60N (STMicroelectronics): Rated for 5A continuous drain current with 0.9 Ohm Rds On. Includes automotive-grade qualification (AEC-Q101) and active product status. Recommended for automotive applications requiring 600V operation.

R6004KNJTL (Rohm Semiconductor): Rated for 4A continuous drain current with 0.98 Ohm Rds On and low gate charge (10.2 nC). Active product status and RoHS3 compliant. Suitable for applications where current requirements are below 6.2A.

All recommended substitutes maintain the -55°C to 150°C operating temperature range and surface mount packaging compatibility with the original IRFBC40S.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40SPBF be used as a direct replacement for IRFBC40S?

A: Yes. The IRFBC40SPBF is a direct parametric equivalent with identical electrical specifications. The primary difference is product status: IRFBC40SPBF is active while IRFBC40S is obsolete. Both parts maintain 600V Vdss, 6.2A continuous drain current, 1.2 Ohm Rds On, and 60 nC gate charge. Packaging is compatible TO-263 (D2PAK).

Q: What is the difference between the IRFBC40S and FQB7N60TM?

A: Both devices operate at 600V Vdss and use TO-263 (D2PAK) packaging. The FQB7N60TM offers higher continuous drain current (7.4A vs. 6.2A), lower on-state resistance (1.0 Ohm vs. 1.2 Ohm), and reduced gate charge (38 nC vs. 60 nC). The FQB7N60TM is suitable for applications requiring enhanced current capacity and switching speed. However, FQB7N60TM carries obsolete product status.

Q: Are the Rohm R6004ENJTL and R6004KNJTL suitable substitutes?

A: The R6004 series parts are suitable for applications where continuous drain current requirements are 4A or lower. Both R6004ENJTL and R6004KNJTL maintain 600V Vdss and offer lower on-state resistance (0.98 Ohm) compared to the IRFBC40S. However, their 4A current rating is below the IRFBC40S 6.2A specification. These parts are recommended only when application current demands do not exceed 4A.

Q: What is the advantage of STB9NK60ZT4 over IRFBC40SPBF?

A: The STB9NK60ZT4 provides improved on-state resistance (0.95 Ohm vs. 1.2 Ohm) and higher continuous drain current (7A vs. 6.2A), resulting in lower power dissipation and improved thermal performance. Gate charge is comparable (53 nC vs. 60 nC). Both parts are active and RoHS3 compliant. The STB9NK60ZT4 is recommended for applications prioritizing efficiency and thermal management.

Q: Can IXTA7N60P replace IRFBC40S in all applications?

A: The IXTA7N60P maintains 600V Vdss and provides 7A continuous drain current with 1.1 Ohm Rds On. The primary advantage is significantly lower gate charge (20 nC vs. 60 nC), enabling faster switching transitions. The IXTA7N60P is active and RoHS3 compliant. It is suitable for high-frequency switching applications. Verify gate drive circuit compatibility due to lower gate charge requirements.

Q: What packaging differences exist among substitute parts?

A: The IRFBC40S uses TO-263 (D2PAK) packaging. Most substitutes maintain this package family: IRFBC40SPBF, FQB7N60TM, IXTA7N60P, and STB9NK60ZT4 use TO-263 variants. The R6004 series uses LPTS packaging, and STD7ANM60N uses DPAK (TO-252). Verify PCB layout compatibility before selecting parts with different package designations.

Q: Is STD7ANM60N suitable for non-automotive applications?

A: Yes. The STD7ANM60N is rated for 5A continuous drain current with 0.9 Ohm Rds On and 600V Vdss. Although it carries automotive-grade qualification (AEC-Q101), it is suitable for general industrial applications. The primary limitation is the 5A current rating, which is below the IRFBC40S 6.2A specification.

Q: What is the significance of gate charge (Qg) differences among substitutes?

A: Gate charge affects switching speed and gate drive circuit requirements. Lower gate charge (e.g., IXTA7N60P at 20 nC, STB6N60M2 at 8 nC) enables faster switching transitions and reduces gate drive power consumption. Higher gate charge (e.g., IRFBC40S at 60 nC) requires more gate drive current but may provide better noise immunity. Select based on application switching frequency and gate drive circuit capability.

Q: Are all substitute parts RoHS3 compliant?

A: All active substitute parts listed (IRFBC40SPBF, IXTA7N60P, R6004ENJTL, R6004KNJTL, STB6N60M2, STB9NK60ZT4, STD7ANM60N) are RoHS3 compliant. The obsolete parts (IRFBC40S, FQB7N60TM) carry RoHS3 compliance status. Verify compliance requirements for your specific application and regulatory jurisdiction.

Q: Can lower-current parts like R6004KNJTL be used in IRFBC40S applications?

A: Only if application current requirements do not exceed the substitute part rating. The R6004KNJTL is rated for 4A continuous drain current, which is below the IRFBC40S 6.2A specification. Using an undersized part in an application requiring 6.2A will result in thermal stress and potential device failure. Verify actual application current requirements before selecting lower-rated substitutes.

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