IRFBC40LC N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40LC is an N-Channel 600V 6.2A MOSFET manufactured by Vishay Siliconix in TO-220AB through-hole packaging. This device is classified as obsolete product status. The IRFBC40LC serves as a power switching element in applications requiring 600V drain-source voltage capability with 6.2A continuous drain current at 125W power dissipation. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements.

Substiute Parts

IRFBC40LC
Vishay SiliconixIn Stock: 6060IRFBC40LC Datasheet
IRFBC40LC
Current Part
IRFBC40LCL
Vishay SiliconixIn Stock: 1053IRFBC40LCL Datasheet
IRFBC40LCL
Direct
IRFBC40LCS
Vishay SiliconixIn Stock: 752IRFBC40LCS Datasheet
IRFBC40LCS
Direct
IRFBC40LCSTRL
Vishay SiliconixIn Stock: 847IRFBC40LCSTRL Datasheet
IRFBC40LCSTRL
Direct
IRFBC40LCSTRR
Vishay SiliconixIn Stock: 1094IRFBC40LCSTRR Datasheet
IRFBC40LCSTRR
Direct
IRFBC40LCPBF
Vishay SiliconixIn Stock: 2559IRFBC40LCPBF Datasheet
IRFBC40LCPBF
Parametric Equivalent
FCP4N60
Fairchild SemiconductorIn Stock: 3103FCP4N60 Datasheet
FCP4N60
MFR Recommended
STP6N60M2
STMicroelectronicsIn Stock: 1320STP6N60M2 Datasheet
STP6N60M2
MFR Recommended
STP6N62K3
STMicroelectronicsIn Stock: 8440STP6N62K3 Datasheet
STP6N62K3
MFR Recommended
STP7N60M2
STMicroelectronicsIn Stock: 15482STP7N60M2 Datasheet
STP7N60M2
MFR Recommended
STP9N65M2
STMicroelectronicsIn Stock: 2102STP9N65M2 Datasheet
STP9N65M2
MFR Recommended
STP9NK60Z
STMicroelectronicsIn Stock: 25826STP9NK60Z Datasheet
STP9NK60Z
MFR Recommended
STP9NK65Z
STMicroelectronicsIn Stock: 1833STP9NK65Z Datasheet
STP9NK65Z
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 6.2 A
Rds On (Max) @ Id, Vgs 1.2 Ohm @ 3.7A, 10V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10V
Power Dissipation (Max) 125 W
Operating Temperature -55 to 150 °C
Mounting Type Through Hole
Package / Case TO-220-3

Substitute Part Grouping Explanation

Substitution of the IRFBC40LC is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain to Source Voltage (Vdss): 600V minimum
  • Continuous Drain Current (Id): 6.2A or greater
  • Rds On (Max): 1.2 Ohm or lower at specified gate voltage
  • Gate Charge (Qg): 39 nC or lower
  • Power Dissipation: 125W or greater
  • Operating Temperature Range: -55°C to 150°C minimum
  • Mounting Type: Through Hole (for direct mechanical substitution)
  • Package: TO-220-3 compatible footprint

Substitution Categories:

Category 1: Direct Manufacturer Equivalents (Same Base Part Number) These parts share the IRFBC40 base product number with identical electrical specifications but differ in packaging format or product status. All maintain 600V Vdss, 6.2A Id, 1.2 Ohm Rds On, and 125W power dissipation.

Category 2: Parametric Equivalents (Active Product Status) These parts meet or exceed all critical electrical parameters of the IRFBC40LC while offering active product status and improved compliance certifications.

Category 3: Manufacturer Recommended Alternatives These parts from alternative manufacturers provide comparable electrical performance within acceptable parameter ranges, suitable for applications where the primary specifications are met.

Parameter Comparison

Part Number Manufacturer Vdss (V) Id @ 25°C (A) Rds On (Ohm) Qg (nC) Power Diss. (W) Package Mounting Product Status
IRFBC40LC Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-220-3 Through Hole Obsolete
IRFBC40LCL Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-262-3 Through Hole Active
IRFBC40LCS Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-263-3 Surface Mount Active
IRFBC40LCSTRL Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-263-3 Surface Mount Active
IRFBC40LCSTRR Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-263-3 Surface Mount Active
IRFBC40LCPBF Vishay Siliconix 600 6.2 1.2 @ 3.7A, 10V 39 @ 10V 125 TO-220-3 Through Hole Active
FCP4N60 Fairchild Semiconductor 600 3.9 1.2 @ 2A, 10V 16.6 @ 10V 50 TO-220-3 Through Hole Active
STP6N60M2 STMicroelectronics 600 4.5 1.2 @ 2.25A, 10V 8 @ 10V 60 TO-220-3 Through Hole Active
STP6N62K3 STMicroelectronics 620 5.5 1.2 @ 2.8A, 10V 34 @ 10V 90 TO-220-3 Through Hole Active
STP7N60M2 STMicroelectronics 600 5 0.95 @ 2.5A, 10V 8.8 @ 10V 60 TO-220-3 Through Hole Active
STP9N65M2 STMicroelectronics 650 5 0.9 @ 2.5A, 10V 10 @ 10V 60 TO-220-3 Through Hole Active

Engineering Selection Recommendations

For Direct Replacement (Same Electrical Performance, Active Status):

IRFBC40LCPBF is the primary recommendation for through-hole TO-220-3 applications. This part maintains identical electrical specifications to the IRFBC40LC while offering active product status and RoHS3 compliance, providing improved long-term availability and regulatory alignment.

For Packaging Format Changes:

IRFBC40LCL provides identical electrical performance in I2PAK (TO-262-3) through-hole packaging for applications requiring different thermal or mechanical mounting characteristics.

IRFBC40LCS and IRFBC40LCSTRL provide identical electrical performance in D2PAK (TO-263-3) surface-mount packaging for PCB-level integration.

For Alternative Manufacturer Solutions:

STP7N60M2 (STMicroelectronics) meets the 600V Vdss and provides 5A continuous drain current with improved Rds On (0.95 Ohm) and significantly lower gate charge (8.8 nC). This part is suitable for applications where the full 6.2A rating is not required and lower switching losses are beneficial.

STP9N65M2 (STMicroelectronics) provides 650V Vdss with 5A continuous drain current, offering higher voltage margin with improved Rds On (0.9 Ohm) and minimal gate charge (10 nC). This part is suitable for applications requiring enhanced voltage headroom.

STP6N62K3 (STMicroelectronics) provides 620V Vdss with 5.5A continuous drain current, offering a balance between voltage rating and current capability with 1.2 Ohm Rds On and 34 nC gate charge.

FCP4N60 (Fairchild Semiconductor) provides 600V Vdss but with reduced continuous drain current (3.9A) and power dissipation (50W). This part is suitable only for applications with lower current requirements.

Compliance Considerations:

IRFBC40LCPBF, STP6N60M2, STP6N62K3, STP7N60M2, and STP9N65M2 all carry RoHS3 compliance certification, supporting modern regulatory requirements. The original IRFBC40LC is RoHS non-compliant.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40LCPBF directly replace IRFBC40LC in existing designs?

A: Yes. IRFBC40LCPBF maintains identical electrical specifications (600V Vdss, 6.2A Id, 1.2 Ohm Rds On, 125W power dissipation) and TO-220-3 through-hole packaging. The primary difference is active product status and RoHS3 compliance. No circuit modifications are required.

Q: What is the difference between IRFBC40LCL, IRFBC40LCS, and IRFBC40LCSTRL?

A: All three parts share identical electrical specifications with the IRFBC40LC. IRFBC40LCL uses I2PAK (TO-262-3) through-hole packaging. IRFBC40LCS and IRFBC40LCSTRR use D2PAK (TO-263-3) surface-mount packaging. Selection depends on PCB assembly method and thermal management requirements.

Q: Can I use STP7N60M2 as a substitute if my application only requires 5A instead of 6.2A?

A: Yes. STP7N60M2 provides 600V Vdss with 5A continuous drain current, meeting the 600V voltage requirement. The part offers improved Rds On (0.95 Ohm versus 1.2 Ohm) and significantly lower gate charge (8.8 nC versus 39 nC), resulting in lower switching losses. This substitution is valid for applications where 5A current capacity is sufficient.

Q: Why does FCP4N60 have lower power dissipation than IRFBC40LC?

A: FCP4N60 is rated for 3.9A continuous drain current and 50W power dissipation, compared to IRFBC40LC at 6.2A and 125W. This reflects the lower current capability of the FCP4N60 device. This part is suitable only for applications with reduced current requirements.

Q: What are the advantages of STP9N65M2 over IRFBC40LC?

A: STP9N65M2 provides 650V Vdss (50V higher than IRFBC40LC), improved Rds On (0.9 Ohm versus 1.2 Ohm), and significantly lower gate charge (10 nC versus 39 nC). These characteristics reduce switching losses and provide enhanced voltage margin. The trade-off is 5A continuous drain current versus 6.2A. This part is suitable for applications requiring higher voltage headroom and lower switching losses.

Q: Are all substitute parts RoHS compliant?

A: IRFBC40LCPBF, STP6N60M2, STP6N62K3, STP7N60M2, and STP9N65M2 carry RoHS3 compliance. IRFBC40LC, IRFBC40LCL, IRFBC40LCS, IRFBC40LCSTRL, and FCP4N60 are either non-compliant or have different compliance status. Verify compliance requirements for your application before selection.

Q: Can I use a surface-mount part (IRFBC40LCS) in place of a through-hole part (IRFBC40LC)?

A: No. Surface-mount and through-hole parts require different PCB designs and assembly processes. IRFBC40LCS requires surface-mount assembly capability. For through-hole applications, use IRFBC40LCPBF or IRFBC40LCL.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects switching speed and driver power requirements. Lower gate charge (STP7N60M2 at 8.8 nC, STP9N65M2 at 10 nC) results in faster switching and reduced driver losses compared to IRFBC40LC at 39 nC. Higher gate charge requires more driver current but may provide better noise immunity in some applications.

Q: Is STP6N62K3 suitable for 600V applications?

A: STP6N62K3 is rated for 620V Vdss, which exceeds the 600V requirement. This part is suitable for 600V applications and provides 50V additional voltage margin. The 5.5A continuous drain current is lower than IRFBC40LC but higher than some alternatives.

Request Quote (Ships tomorrow)