IRFBC40ASTRRPBF N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40ASTRRPBF is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 125W at the case temperature. This component is classified as Active product status and is ROHS3 compliant.

Equivalent and substitute parts are necessary when the primary part number becomes unavailable, when alternative manufacturers' offerings provide improved performance characteristics, or when design flexibility requires selection from multiple qualified sources. This reference provides parametrically equivalent and manufacturer-recommended alternatives that maintain functional compatibility within specified electrical and mechanical constraints.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.2	Ohm @ 3.7A, 10V
Gate Threshold Voltage Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
RoHS Status	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRFBC40ASTRRPBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 600V minimum
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package Compatibility: TO-263 (D2PAK) or equivalent footprint

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 6.2A at 25°C
Gate Drive Voltage: 10V maximum Rds On specification
Operating Temperature Range: -55°C to 150°C minimum
RoHS Compliance: ROHS3 Compliant

Substitute parts are classified into two categories:

Parametric Equivalents: Parts with identical or superior electrical specifications across all critical parameters, enabling direct replacement without circuit modification.

Manufacturer-Recommended Alternatives: Parts with comparable but not identical specifications, suitable for applications where the primary part is unavailable. These alternatives may exhibit variations in drain current, on-resistance, or gate charge characteristics while maintaining voltage and package compatibility.

Parameter Comparison

Parameter	IRFBC40ASTRRPBF	IRFBC40ASTRLPBF	SIHFBC40AS-GE3	FQB7N60TM	R6004KNJTL	STB6N60M2	STD7ANM60N
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	onsemi	Rohm Semiconductor	STMicroelectronics	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	600	600	600	600	600
Id @ 25°C (A)	6.2	6.2	6.2	7.4	4	4.5	5
Drive Voltage (V)	10	10	10	10	10	10	10
Rds On (Max) @ Id, Vgs (Ohm)	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1 @ 3.7A, 10V	0.98 @ 1.5A, 10V	1.2 @ 2.25A, 10V	0.9 @ 2.5A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	5 @ 250µA	5 @ 1mA	4 @ 250µA	4 @ 250µA
Gate Charge Qg (Max) @ Vgs (nC)	42 @ 10V	42 @ 10V	42 @ 10V	38 @ 10V	10.2 @ 10V	8 @ 10V	14 @ 10V
Power Dissipation (Max) (W)	125 (Tc)	125 (Tc)	125 (Tc)	142 (Tc)	58 (Tc)	60 (Tc)	45 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-252-3, DPAK
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Product Status	Active	Active	Active	Obsolete	Active	Active	Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Replacement):

IRFBC40ASTRLPBF and SIHFBC40AS-GE3 are parametric equivalents to the IRFBC40ASTRRPBF. Both devices are manufactured by Vishay Siliconix and share identical electrical specifications across all critical parameters: 600V Vdss, 6.2A continuous drain current, 1.2Ohm Rds On at specified conditions, and 125W power dissipation. Both are ROHS3 compliant with Active product status. These parts enable direct substitution without circuit redesign.

Manufacturer-Recommended Alternatives:

FQB7N60TM (onsemi) provides superior drain current capability at 7.4A and improved on-resistance at 1Ohm, with 142W power dissipation. However, this device carries Obsolete product status and should be selected only when higher current capacity is required and long-term availability is not a constraint.

STB6N60M2 (STMicroelectronics) operates at 4.5A continuous drain current with 60W power dissipation. This device is suitable for applications with lower current requirements and is Active status with REACH Unaffected certification.

STD7ANM60N (STMicroelectronics) provides 5A continuous drain current with 45W power dissipation in a DPAK package variant. This device includes AEC-Q101 automotive qualification and is Active status. Package footprint differs from the primary part (DPAK versus D2PAK).

R6004KNJTL (Rohm Semiconductor) operates at 4A continuous drain current with 58W power dissipation. This device exhibits lower gate charge at 10.2nC and reduced input capacitance, suitable for applications prioritizing switching speed. Active product status with REACH Unaffected certification.

Selection Criteria:

For applications requiring identical electrical performance and immediate compatibility, select IRFBC40ASTRLPBF or SIHFBC40AS-GE3. For applications with reduced current requirements, select STB6N60M2 or R6004KNJTL. For automotive-qualified designs, select STD7ANM60N. Avoid FQB7N60TM due to Obsolete status unless higher current capacity is essential and alternative sources are unavailable.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40ASTRLPBF be used as a direct replacement for IRFBC40ASTRRPBF?

A: Yes. IRFBC40ASTRLPBF is a parametric equivalent with identical electrical specifications, package type (TO-263 D2PAK), and compliance certifications. No circuit modification is required.

Q: What is the difference between IRFBC40ASTRRPBF and SIHFBC40AS-GE3?

A: Both devices are manufactured by Vishay Siliconix and share identical electrical specifications: 600V Vdss, 6.2A Id, 1.2Ohm Rds On, and 125W power dissipation. The primary difference is the manufacturer part number designation. Both are ROHS3 compliant and Active status.

Q: Can STD7ANM60N replace IRFBC40ASTRRPBF in all applications?

A: STD7ANM60N is not a direct replacement. While it maintains 600V Vdss and 10V drive voltage, it operates at 5A continuous drain current (versus 6.2A) and uses a DPAK package (TO-252-3) instead of D2PAK (TO-263-3). PCB layout modification is required. This device is suitable only for applications with lower current requirements and where the DPAK footprint is acceptable.

Q: Why is FQB7N60TM listed as Obsolete?

A: FQB7N60TM carries Obsolete product status according to manufacturer classification. While the device remains available in inventory, long-term supply cannot be guaranteed. Selection should be limited to applications where higher current capability (7.4A) is essential and alternative sources are unavailable.

Q: What are the key parameters that determine substitution compatibility?

A: Substitution compatibility is determined by: (1) Drain-to-Source Voltage (Vdss) minimum 600V, (2) N-Channel FET type, (3) Surface Mount technology, (4) TO-263 D2PAK package or equivalent footprint, (5) Continuous drain current capability at or above 6.2A at 25°C, and (6) ROHS3 compliance. Variations in on-resistance, gate charge, and power dissipation are acceptable provided the application circuit can tolerate these differences.

Q: Is package compatibility critical for substitution?

A: Yes. IRFBC40ASTRRPBF uses TO-263-3 D2PAK package. Substitutes using identical D2PAK packaging (IRFBC40ASTRLPBF, SIHFBC40AS-GE3, FQB7N60TM, R6004KNJTL, STB6N60M2) are pin-compatible. STD7ANM60N uses DPAK (TO-252-3) package, which has different pin spacing and requires PCB layout modification.

Q: What is the significance of the 1.2Ohm Rds On specification?

A: Rds On (on-resistance) directly affects power dissipation and switching performance. The IRFBC40ASTRRPBF specification of 1.2Ohm @ 3.7A, 10V establishes the baseline for substitution. Alternatives with lower Rds On (such as STD7ANM60N at 0.9Ohm) reduce conduction losses. Alternatives with higher Rds On increase power dissipation and may require thermal management review.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 Compliant status, ensuring compatibility with environmental and regulatory requirements equivalent to the primary part.

Q: What does Moisture Sensitivity Level (MSL) 1 mean?

A: MSL 1 indicates unlimited shelf life without moisture control requirements. All listed parts carry MSL 1 classification, eliminating moisture-related handling constraints during storage and assembly.

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