IRFBC40ASTRLPBF N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40ASTRLPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 125W at the case temperature. This part is currently Active in product status with 1616 units in stock.

Equivalent and substitute parts are necessary when the primary part becomes unavailable, when alternative sourcing is required for supply chain optimization, or when design specifications allow for compatible alternatives with different electrical or thermal characteristics within acceptable operating parameters.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	1.2	Ohm @ 3.7A, 10V
Gate Threshold Voltage (Vgs(th) Max) @ Id	4	V @ 250µA
Gate Charge (Qg Max) @ Vgs	42	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
FET Type	N-Channel	MOSFET

Substitute Part Grouping Explanation

Substitution of the IRFBC40ASTRLPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain a minimum Drain to Source Voltage (Vdss) of 600V to ensure equivalent or superior voltage withstand capability.

Current Rating: Substitute parts are grouped by continuous drain current (Id) at 25°C. Parts with equal or higher current ratings (6.2A or greater) are considered direct parametric equivalents. Parts with lower current ratings (4A to 5A) are functional substitutes suitable for applications with reduced current demands.

On-State Resistance (Rds On): The maximum on-state resistance at specified gate and drain conditions determines switching losses and thermal performance. Lower Rds On values indicate improved efficiency.

Package Compatibility: All substitute parts use TO-263 (D2PAK) or equivalent surface mount packages with identical pinout and thermal characteristics, ensuring mechanical and thermal interchangeability.

Gate Charge (Qg): Lower gate charge values reduce gate drive requirements and switching losses. This parameter influences circuit design but does not prevent substitution.

Temperature Range: All parts operate across -55°C to 150°C junction temperature, ensuring thermal compatibility.

Compliance: All substitute parts are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity, matching the original part's environmental specifications.

Parameter Comparison

Parameter	IRFBC40ASTRLPBF (Vishay)	SIHFBC40AS-GE3 (Vishay)	FQB7N60TM (onsemi)	R6004KNJTL (Rohm)	R6008FNJTL (Rohm)	STB6N60M2 (STMicroelectronics)	STD7ANM60N (STMicroelectronics)
Manufacturer	Vishay Siliconix	Vishay Siliconix	onsemi	Rohm Semiconductor	Rohm Semiconductor	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600	600	600	600
Id @ 25°C (A)	6.2	6.2	7.4	4	8	4.5	5
Rds On Max (Ohm)	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	1 @ 3.7A, 10V	0.98 @ 1.5A, 10V	0.95 @ 4A, 10V	1.2 @ 2.25A, 10V	0.9 @ 2.5A, 10V
Vgs(th) Max (V)	4 @ 250µA	4 @ 250µA	5 @ 250µA	5 @ 1mA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	42 @ 10V	42 @ 10V	38 @ 10V	10.2 @ 10V	20 @ 10V	8 @ 10V	14 @ 10V
Power Dissipation Max (W)	125 (Tc)	125 (Tc)	142 (Tc)	58 (Tc)	50 (Tc)	60 (Tc)	45 (Tc)
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	D2PAK	DPAK
Product Status	Active	Active	Obsolete	Active	Active	Active	Active
RoHS Compliance	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3
MSL Rating	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)

Engineering Selection Recommendations

Direct Parametric Equivalent:

SIHFBC40AS-GE3 (Vishay Siliconix) is the direct parametric equivalent to IRFBC40ASTRLPBF. Both parts share identical electrical specifications including 600V Vdss, 6.2A continuous drain current, 1.2Ohm Rds On, and 125W power dissipation. Both are Active products with RoHS3 compliance and MSL 1 rating. This part is preferred for direct replacement with 2837 units in stock.

Higher Current Capability Substitutes:

FQB7N60TM (onsemi) provides 7.4A continuous drain current with improved Rds On of 1Ohm and higher power dissipation of 142W. However, this part is marked Obsolete and should not be selected for new designs despite higher current capability.

R6008FNJTL (Rohm Semiconductor) offers 8A continuous drain current with 0.95Ohm Rds On and 50W power dissipation. This part is Active and suitable for applications requiring higher current handling with improved efficiency characteristics.

Reduced Current Capability Substitutes:

R6004KNJTL (Rohm Semiconductor) and STB6N60M2 (STMicroelectronics) provide 4A and 4.5A continuous drain current respectively. These parts are suitable only for applications where the design current requirement does not exceed their rated values. Both are Active products with full compliance.

STD7ANM60N (STMicroelectronics) provides 5A continuous drain current with 0.9Ohm Rds On and includes AEC-Q101 automotive qualification. This part is Active and suitable for automotive applications requiring reduced current with improved efficiency.

Product Status Consideration:

All substitute parts except FQB7N60TM are Active in product status. FQB7N60TM is Obsolete and should be avoided for new designs or long-term production commitments.

Frequently Asked Questions (FAQ)

Q: Can SIHFBC40AS-GE3 be used as a direct replacement for IRFBC40ASTRLPBF?

A: Yes. SIHFBC40AS-GE3 is a direct parametric equivalent with identical electrical and thermal specifications. Both parts are manufactured by Vishay Siliconix, share the same 600V/6.2A ratings, and use TO-263 (D2PAK) packaging. No circuit modifications are required.

Q: What is the difference between D2PAK and DPAK packages?

A: D2PAK (TO-263) and DPAK (TO-252) are different surface mount packages with different thermal and mechanical characteristics. STD7ANM60N uses DPAK packaging, which has different footprint and thermal properties compared to the D2PAK used by IRFBC40ASTRLPBF. Physical board layout modifications are required for substitution.

Q: Can I use R6008FNJTL (8A) instead of IRFBC40ASTRLPBF (6.2A)?

A: Yes, R6008FNJTL can be used in applications where the IRFBC40ASTRLPBF is specified. The higher current rating (8A vs 6.2A) and improved Rds On (0.95Ohm vs 1.2Ohm) provide enhanced performance. However, verify that the lower power dissipation rating (50W vs 125W) is acceptable for your thermal design. R6008FNJTL is Active and fully compliant.

Q: Why is FQB7N60TM listed as a substitute if it is Obsolete?

A: FQB7N60TM is included in the comparison for reference purposes only. Its Obsolete status makes it unsuitable for new designs or production commitments. Existing designs using this part should transition to Active alternatives such as R6008FNJTL or SIHFBC40AS-GE3.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All substitute parts listed are RoHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating, matching the environmental specifications of IRFBC40ASTRLPBF.

Q: What does Rds On specification mean for substitution?

A: Rds On (on-state resistance) determines the voltage drop across the transistor during conduction. Lower Rds On values reduce power dissipation and heat generation. Substitutes with lower Rds On values (such as STD7ANM60N at 0.9Ohm) provide improved efficiency but must be verified against your circuit's gate drive capability and thermal requirements.

Q: Can I use a lower current rated part like R6004KNJTL (4A) in place of IRFBC40ASTRLPBF (6.2A)?

A: R6004KNJTL can be used only if your application's actual drain current does not exceed 4A. Using an undersized part in a circuit designed for 6.2A operation will cause excessive power dissipation, thermal stress, and potential device failure. Verify actual circuit current requirements before substitution.

Q: What is the significance of Gate Charge (Qg) in substitution?

A: Gate charge affects the energy required to switch the transistor on and off. Lower Qg values (such as STB6N60M2 at 8nC) reduce gate drive power and switching losses. Higher Qg values (such as IRFBC40ASTRLPBF at 42nC) require more gate drive energy. Substitutes with significantly different Qg may require gate driver circuit adjustments.

Q: Are all substitute parts suitable for automotive applications?

A: Only STD7ANM60N carries AEC-Q101 automotive qualification. Other parts are industrial grade. If automotive qualification is required, STD7ANM60N is the only qualified substitute, though it uses DPAK packaging instead of D2PAK.

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