IRFBC40AS N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40AS is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-263 (D2PAK) surface mount package and dissipates up to 125W at the case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On) @ 3.7A, 10V	1.2	Ohm
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	42	nC
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)
Mounting Type	Surface Mount

Substitute Part Grouping Explanation

Substitution of the IRFBC40AS is determined by the following critical parameters:

Mandatory Matching Parameters:

Drain-to-Source Voltage (Vdss): 600V minimum
Package Type: TO-263 (D2PAK) or compatible surface mount package
Mounting Type: Surface Mount
Operating Temperature Range: -55°C to 150°C (TJ)

Performance Parameters (Allowable Variation):

Continuous Drain Current (Id): 6.2A or higher
On-State Resistance (Rds On): 1.2 Ohm or lower (at equivalent test conditions)
Power Dissipation: 125W or higher
Gate Charge (Qg): 42 nC or lower

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (enhanced or comparable performance with the same voltage and package class).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Qg (nC)	Power Dissipation (W)	Package	Product Status	RoHS Status
IRFBC40AS	Vishay Siliconix	600	6.2	1.2 @ 3.7A, 10V	42 @ 10V	125 (Tc)	TO-263 (D2PAK)	Obsolete	Non-compliant
IRFBC40ASPBF	Vishay Siliconix	600	6.2	1.2 @ 3.7A, 10V	42 @ 10V	125 (Tc)	TO-263 (D2PAK)	Active	ROHS3 Compliant
FQB7N60TM	onsemi	600	7.4	1.0 @ 3.7A, 10V	38 @ 10V	142 (Tc)	TO-263 (D2PAK)	Obsolete	ROHS3 Compliant
IXTA7N60P	IXYS	600	7	1.1 @ 3.5A, 10V	20 @ 10V	150 (Tc)	TO-263AA	Active	ROHS3 Compliant
R6004ENJTL	Rohm Semiconductor	600	4	0.98 @ 1.5A, 10V	15 @ 10V	40 (Tc)	LPTS	Active	ROHS3 Compliant
R6004KNJTL	Rohm Semiconductor	600	4	0.98 @ 1.5A, 10V	10.2 @ 10V	58 (Tc)	LPTS	Active	ROHS3 Compliant
R6008FNJTL	Rohm Semiconductor	600	8	0.95 @ 4A, 10V	20 @ 10V	50 (Tc)	LPTS	Active	ROHS3 Compliant
STB6N60M2	STMicroelectronics	600	4.5	1.2 @ 2.25A, 10V	8 @ 10V	60 (Tc)	D2PAK	Active	ROHS3 Compliant
STB9NK60ZT4	STMicroelectronics	600	7	0.95 @ 3.5A, 10V	53 @ 10V	125 (Tc)	D2PAK	Active	ROHS3 Compliant
STD7ANM60N	STMicroelectronics	600	5	0.9 @ 2.5A, 10V	14 @ 10V	45 (Tc)	DPAK	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRFBC40ASPBF is the direct parametric equivalent to IRFBC40AS. Both devices share identical electrical specifications: 600V Vdss, 6.2A continuous drain current, 1.2 Ohm Rds On, and 125W power dissipation. The primary difference is product status and RoHS compliance. IRFBC40ASPBF is active and ROHS3 compliant, whereas IRFBC40AS is obsolete and non-compliant. IRFBC40ASPBF is packaged in tube format and is suitable for direct substitution in all applications where IRFBC40AS was previously used.

Manufacturer-Recommended Alternatives (Enhanced Performance):

STB9NK60ZT4 (STMicroelectronics) provides equivalent power dissipation (125W) and operating temperature range with improved on-state resistance (0.95 Ohm vs. 1.2 Ohm) and higher drain current (7A vs. 6.2A). This device is active and ROHS3 compliant. The D2PAK package is mechanically compatible with TO-263 (D2PAK) footprints.

IXTA7N60P (IXYS) offers higher drain current (7A) and power dissipation (150W) with lower gate charge (20 nC vs. 42 nC), resulting in faster switching characteristics. This device is active and ROHS3 compliant. The TO-263AA package is compatible with TO-263 (D2PAK) footprints.

FQB7N60TM (onsemi) provides higher drain current (7.4A) and power dissipation (142W) with improved on-state resistance (1.0 Ohm) and lower gate charge (38 nC). Although classified as obsolete, it is ROHS3 compliant and maintains TO-263 (D2PAK) package compatibility.

Lower Current Alternatives (Reduced Performance):

STB6N60M2 (STMicroelectronics), R6004ENJTL, R6004KNJTL, and R6008FNJTL are suitable only for applications where the required drain current is lower than 6.2A. These devices maintain 600V Vdss and surface mount packaging but offer reduced current ratings (4A to 8A) and lower power dissipation. All are active and ROHS3 compliant.

STD7ANM60N (STMicroelectronics) is an automotive-grade device (AEC-Q101 qualified) with 5A drain current and DPAK package. This device is suitable for automotive applications requiring lower current ratings.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40ASPBF be used as a direct replacement for IRFBC40AS?

A: Yes. IRFBC40ASPBF is the parametric equivalent with identical electrical specifications. The only differences are product status (active vs. obsolete) and RoHS compliance (ROHS3 compliant vs. non-compliant). IRFBC40ASPBF is suitable for direct substitution in all applications.

Q: What is the difference between TO-263 (D2PAK) and TO-263AA packages?

A: Both packages are mechanically and electrically compatible surface mount packages with identical lead configurations (2 leads + tab). TO-263AA is a variant designation used by certain manufacturers. Footprints are interchangeable.

Q: Can I use STB9NK60ZT4 instead of IRFBC40AS if my application requires 6.2A?

A: Yes. STB9NK60ZT4 is rated for 7A continuous drain current, which exceeds the 6.2A requirement of IRFBC40AS. The device maintains 600V Vdss, 125W power dissipation, and -55°C to 150°C operating temperature range. The improved on-state resistance (0.95 Ohm vs. 1.2 Ohm) provides better thermal performance.

Q: Why is IRFBC40AS marked as obsolete?

A: IRFBC40AS is classified as obsolete by the manufacturer. IRFBC40ASPBF is the active replacement that maintains identical specifications while providing ROHS3 compliance.

Q: Can I use R6004ENJTL or R6004KNJTL as substitutes for IRFBC40AS?

A: R6004ENJTL and R6004KNJTL are rated for only 4A continuous drain current, which is below the 6.2A requirement of IRFBC40AS. These devices are suitable only for applications with lower current requirements. They are not recommended as direct substitutes for the IRFBC40AS in circuits designed for 6.2A operation.

Q: What is the advantage of IXTA7N60P over IRFBC40AS?

A: IXTA7N60P offers higher drain current (7A vs. 6.2A), higher power dissipation (150W vs. 125W), and significantly lower gate charge (20 nC vs. 42 nC). The lower gate charge results in faster switching transitions, which can reduce switching losses in high-frequency applications. The device is active and ROHS3 compliant.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant except FQB7N60TM, which is obsolete but ROHS3 compliant. The original IRFBC40AS is non-compliant. IRFBC40ASPBF is the only parametric equivalent that is both active and ROHS3 compliant.

Q: Can I use STD7ANM60N in non-automotive applications?

A: Yes. STD7ANM60N is AEC-Q101 qualified for automotive use, but this qualification does not restrict its use in non-automotive applications. However, the device is rated for only 5A continuous drain current, which is below the 6.2A requirement of IRFBC40AS.

Q: What is the difference between LPTS and D2PAK packages?

A: LPTS (Low Profile Top-Side) and D2PAK (TO-263) are both surface mount packages with 2 leads + tab configurations. LPTS packages are typically lower profile. Both are mechanically compatible with TO-263 footprints, though PCB layout considerations may apply due to dimensional differences.

Q: Which substitute part has the lowest on-state resistance?

A: STD7ANM60N has the lowest on-state resistance at 0.9 Ohm (measured at 2.5A, 10V). However, this device is rated for only 5A continuous drain current. Among devices rated for 6.2A or higher, STB9NK60ZT4 and IXTA7N60P offer the lowest on-state resistance at 0.95 Ohm.

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