IRFBC40AL N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40AL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is packaged in I2PAK (TO-262-3 Long Leads) through-hole configuration and is classified as obsolete product status. Due to its obsolete classification and limited ongoing availability, equivalent substitute parts from active product lines are necessary for new designs and ongoing production requirements. The substitute parts listed maintain electrical compatibility within specified parameter tolerances while offering improved availability and active manufacturer support.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	6.2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	1.2	Ohm @ 3.7A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	42	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	1036	pF @ 25V
Mounting Type	Through Hole	—
Package / Case	TO-262-3 Long Leads, I2PAK	—
Product Status	Obsolete	—
RoHS Status	RoHS non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFBC40AL is determined by electrical parameter compatibility within the following criteria:

Primary Electrical Parameters:

Drain-to-Source Voltage (Vdss): Minimum 600V required
Continuous Drain Current (Id): Minimum 6.2A at 25°C required
On-State Resistance (Rds On): Maximum 1.2 Ohm at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Maximum 4V at specified drain current
Maximum Gate Voltage (Vgs): ±25V minimum required

Secondary Electrical Parameters:

Gate Charge (Qg): Influences switching characteristics
Input Capacitance (Ciss): Affects gate drive requirements
Operating Temperature Range: Determines thermal performance envelope

Mechanical Compatibility:

Mounting Type: Through Hole required
Package Type: TO-220 packages are functionally equivalent to I2PAK for through-hole applications

Compliance Considerations:

RoHS Status: Active substitute parts are ROHS3 compliant, addressing regulatory requirements
Product Status: Active status ensures ongoing availability and manufacturer support

The substitute parts STP6N60M2, STP6N62K3, STP7N60M2, and STP9NK60Z meet or exceed the electrical requirements of the IRFBC40AL while offering improved product status and regulatory compliance.

Parameter Comparison

Parameter	IRFBC40AL	STP6N60M2	STP6N62K3	STP7N60M2	STP9NK60Z
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	620	600	600
Id @ 25°C (A)	6.2	4.5	5.5	5	7
Drive Voltage (V)	10	10	10	10	10
Rds On (Max) @ Id, Vgs (Ohm)	1.2 @ 3.7A, 10V	1.2 @ 2.25A, 10V	1.2 @ 2.8A, 10V	0.95 @ 2.5A, 10V	0.95 @ 3.5A, 10V
Vgs(th) (Max) @ Id (V)	4 @ 250µA	4 @ 250µA	4.5 @ 50µA	4 @ 250µA	4.5 @ 100µA
Qg (Max) @ Vgs (nC)	42 @ 10V	8 @ 10V	34 @ 10V	8.8 @ 10V	53 @ 10V
Vgs (Max) (V)	±30	±25	±30	±25	±30
Ciss (Max) @ Vds (pF)	1036 @ 25V	232 @ 100V	875 @ 50V	271 @ 100V	1110 @ 25V
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Package / Case	TO-262-3 Long Leads, I2PAK	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

STP9NK60Z is the primary substitute for applications requiring maximum current capacity. This device delivers 7A continuous drain current at 25°C, exceeding the IRFBC40AL specification of 6.2A. The STP9NK60Z maintains 600V Vdss rating and achieves 0.95 Ohm Rds On at 3.5A, 10V. Product status is active with ROHS3 compliance. Operating temperature range extends to -55°C to 150°C (TJ). Power dissipation capability is 125W (Tc), providing thermal margin for high-frequency switching applications.

STP6N62K3 is suitable for applications where voltage margin is beneficial. This device provides 620V Vdss rating with 5.5A continuous drain current at 25°C. Rds On is specified at 1.2 Ohm at 2.8A, 10V. Product status is active with ROHS3 compliance. Operating temperature maximum is 150°C (TJ). Power dissipation capability is 90W (Tc). Gate charge is 34 nC at 10V, providing moderate switching speed characteristics.

STP7N60M2 offers balanced electrical performance with 5A continuous drain current at 25°C and improved on-state resistance of 0.95 Ohm at 2.5A, 10V. Vdss rating is 600V. Product status is active with ROHS3 compliance. Operating temperature range is -55°C to 150°C (TJ). Power dissipation capability is 60W (Tc). Gate charge is 8.8 nC at 10V, providing fast switching characteristics suitable for high-frequency applications.

STP6N60M2 is applicable for lower current applications where 4.5A continuous drain current at 25°C is sufficient. Rds On is 1.2 Ohm at 2.25A, 10V. Vdss rating is 600V. Product status is active with ROHS3 compliance. Operating temperature range is -55°C to 150°C (TJ). Power dissipation capability is 60W (Tc). Gate charge is 8 nC at 10V, providing the fastest switching characteristics among substitute options.

All substitute parts are available in TO-220-3 through-hole packages, which are mechanically compatible with standard PCB footprints. Package transition from I2PAK to TO-220 requires PCB layout modification but maintains electrical functionality. All substitute parts carry ROHS3 compliance, addressing regulatory requirements for new designs.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC40AL be directly replaced with STP9NK60Z without PCB modification?

A: Electrical substitution is valid. However, package transition from I2PAK (TO-262-3 Long Leads) to TO-220-3 requires PCB footprint modification. Pin assignments differ between package types. Mechanical mounting and lead spacing must be redesigned for the TO-220 package.

Q: What is the minimum continuous drain current requirement for substitute selection?

A: The IRFBC40AL specifies 6.2A continuous drain current at 25°C. Substitute parts must meet or exceed this specification. STP9NK60Z (7A) and STP6N62K3 (5.5A) meet this requirement. STP7N60M2 (5A) and STP6N60M2 (4.5A) fall below the original specification and are suitable only for applications where actual current demand is lower than the IRFBC40AL rating.

Q: Are all substitute parts RoHS compliant?

A: Yes. All four substitute parts (STP6N60M2, STP6N62K3, STP7N60M2, STP9NK60Z) carry ROHS3 compliance status. The original IRFBC40AL is RoHS non-compliant. Substitution addresses regulatory requirements for new designs and production.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge affects switching speed and gate drive circuit requirements. The IRFBC40AL specifies 42 nC at 10V. STP6N60M2 and STP7N60M2 have lower gate charge (8 nC and 8.8 nC respectively), enabling faster switching. STP6N62K3 and STP9NK60Z have higher gate charge (34 nC and 53 nC respectively), requiring higher gate drive current but providing more robust switching characteristics.

Q: Can STP6N60M2 or STP7N60M2 be used in applications designed for 6.2A continuous current?

A: STP6N60M2 (4.5A) and STP7N60M2 (5A) have continuous drain current ratings below the IRFBC40AL specification of 6.2A. These parts are suitable only for applications where actual operating current is within their rated limits. Thermal and electrical stress analysis is required to confirm safe operation below rated current.

Q: What are the operating temperature differences between substitute parts?

A: STP6N60M2 and STP7N60M2 specify operating temperature range of -55°C to 150°C (TJ). STP6N62K3 specifies maximum junction temperature of 150°C (TJ) without lower limit specification. STP9NK60Z specifies -55°C to 150°C (TJ). All parts support standard industrial temperature ranges. Application-specific thermal analysis determines suitability for extreme temperature environments.

Q: How does Vdss rating affect substitution?

A: The IRFBC40AL specifies 600V Vdss. All substitute parts maintain 600V or higher Vdss rating (STP6N62K3 is rated 620V). Higher Vdss rating provides voltage margin and does not compromise electrical compatibility. Vdss must never be lower than the original specification.

Q: What is the impact of Rds On variation on circuit performance?

A: The IRFBC40AL specifies 1.2 Ohm Rds On at 3.7A, 10V. STP6N60M2 and STP6N62K3 maintain 1.2 Ohm specification. STP7N60M2 and STP9NK60Z achieve lower Rds On (0.95 Ohm), reducing on-state power dissipation and heat generation. Lower Rds On improves efficiency but does not affect electrical compatibility.

Q: Are input capacitance differences significant for gate drive circuit design?

A: Input capacitance (Ciss) affects gate drive circuit design and switching speed. The IRFBC40AL specifies 1036 pF at 25V. STP6N60M2 (232 pF) and STP7N60M2 (271 pF) have significantly lower Ciss, reducing gate drive power requirements. STP6N62K3 (875 pF) and STP9NK60Z (1110 pF) have comparable or higher Ciss. Gate drive circuit redesign may be required for parts with substantially different Ciss values.

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