IRFBC40A N-Channel 600V 6.2A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC40A is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 6.2A continuous drain current at 25°C. The device is housed in a TO-220AB through-hole package and dissipates up to 125W at the case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFBC40APBF represents the direct parametric equivalent with identical electrical specifications but active product status and improved compliance certifications. Additional substitute options from STMicroelectronics and Fairchild Semiconductor provide functional alternatives within defined parameter ranges.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	6.2	A (Tc)
On-State Resistance (Rds On) @ Id, Vgs	1.2 Ω @ 3.7A, 10V	Ω
Gate Threshold Voltage (Vgs(th)) @ Id	4	V @ 250µA
Gate Charge (Qg) @ Vgs	42	nC @ 10V
Power Dissipation (Max)	125	W (Tc)
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Technology	Metal Oxide (MOSFET)	N-Channel

Substitute Part Grouping Explanation

Substitution of the IRFBC40A is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 6.2A minimum at 25°C
On-State Resistance (Rds On): 1.2Ω or lower at rated conditions
Gate Threshold Voltage (Vgs(th)): Within ±1V of 4V
Power Dissipation: 125W or greater
Package: TO-220 or TO-220AB through-hole
FET Type: N-Channel Metal Oxide MOSFET
Operating Temperature: -55°C to 150°C minimum

Substitution Categories:

Category 1: Direct Parametric Equivalent IRFBC40APBF matches all electrical specifications identically to the IRFBC40A. This part is the preferred substitute due to identical performance characteristics and active product status.

Category 2: Functional Equivalents (600V Class) STP7N60M2, STP9NK60Z, and STP6N62K3 operate at 600V or 620V with drain currents ranging from 4.5A to 5.5A. These parts meet or exceed the voltage and current requirements with comparable on-state resistance and power dissipation ratings. All are active products with RoHS3 compliance.

Category 3: Higher Voltage Alternatives STP10NK80Z operates at 800V with 9A continuous current, providing enhanced voltage margin and higher current capability. This part is suitable for applications requiring additional design headroom.

Category 4: Lower Power Alternative FCP4N60 from Fairchild Semiconductor operates at 600V but with reduced continuous current (3.9A) and power dissipation (50W). This part is suitable only for applications with lower current demands.

Parameter Comparison

Parameter	IRFBC40A	IRFBC40APBF	STP7N60M2	STP9NK60Z	STP6N62K3	STP10NK80Z	FCP4N60
Vdss (V)	600	600	600	600	620	800	600
Id @ 25°C (A)	6.2	6.2	5	7	5.5	9	3.9
Rds On (Ω)	1.2 @ 3.7A, 10V	1.2 @ 3.7A, 10V	0.95 @ 2.5A, 10V	0.95 @ 3.5A, 10V	1.2 @ 2.8A, 10V	0.9 @ 4.5A, 10V	1.2 @ 2A, 10V
Vgs(th) (V)	4 @ 250µA	4 @ 250µA	4 @ 250µA	4.5 @ 100µA	4.5 @ 50µA	4.5 @ 100µA	5 @ 250µA
Qg (nC)	42 @ 10V	42 @ 10V	8.8 @ 10V	53 @ 10V	34 @ 10V	72 @ 10V	16.6 @ 10V
Power Dissipation (W)	125	125	60	125	90	190	50
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	150	-55 to 150	-55 to 150
Package	TO-220AB	TO-220AB	TO-220	TO-220	TO-220	TO-220	TO-220-3
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Compliance	Non-compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	RoHS3 Compliant	Not specified

Engineering Selection Recommendations

First Choice: IRFBC40APBF

IRFBC40APBF is the recommended substitute for direct replacement of the obsolete IRFBC40A. This part provides identical electrical performance across all specified parameters. The IRFBC40APBF is an active product with RoHS3 compliance and REACH affected status, meeting current regulatory requirements. Inventory availability is confirmed at 1,552 pieces. No circuit modifications are required for this substitution.

Second Choice: STP9NK60Z

STP9NK60Z from STMicroelectronics (SuperMESH™ series) is suitable for applications where the IRFBC40APBF is unavailable. This part exceeds the IRFBC40A specifications with 7A continuous drain current and maintains identical 600V voltage rating and 125W power dissipation. The on-state resistance is 0.95Ω, providing improved efficiency. RoHS3 compliance and active product status are confirmed. Inventory availability is 25,791 pieces.

Third Choice: STP7N60M2

STP7N60M2 from STMicroelectronics (MDmesh™ II Plus series) provides a lower-power alternative with 5A continuous drain current. This part is suitable for applications with reduced current requirements. The on-state resistance of 0.95Ω provides improved efficiency compared to the IRFBC40A. RoHS3 compliance and active product status are confirmed. Inventory availability is 15,465 pieces.

Alternative for Higher Voltage Margin: STP10NK80Z

STP10NK80Z operates at 800V with 9A continuous current and 190W power dissipation, providing enhanced design headroom for high-voltage applications. This part is suitable only when the additional voltage rating is required by circuit design. RoHS3 compliance and active product status are confirmed. Inventory availability is 8,058 pieces.

Not Recommended: FCP4N60

FCP4N60 from Fairchild Semiconductor does not meet the minimum continuous drain current requirement of 6.2A, providing only 3.9A. This part is suitable only for applications with significantly reduced current demands and should not be used as a general substitute for the IRFBC40A.

Frequently Asked Questions (FAQ)

Q: Can IRFBC40APBF be used as a direct replacement for IRFBC40A without circuit modifications?

A: Yes. IRFBC40APBF provides identical electrical specifications for drain-to-source voltage, continuous drain current, on-state resistance, gate threshold voltage, gate charge, and power dissipation. The TO-220AB package is mechanically compatible. No circuit modifications are required.

Q: What is the difference between IRFBC40A and IRFBC40APBF?

A: The IRFBC40A is classified as obsolete, while IRFBC40APBF is an active product. IRFBC40APBF is RoHS3 compliant and REACH affected, whereas IRFBC40A is RoHS non-compliant and REACH unaffected. All electrical parameters are identical.

Q: Can STP9NK60Z replace IRFBC40A in all applications?

A: STP9NK60Z can replace IRFBC40A in applications where the continuous drain current requirement does not exceed 7A and the 600V voltage rating is sufficient. The STP9NK60Z provides improved on-state resistance (0.95Ω vs. 1.2Ω) and identical power dissipation (125W). The TO-220 package is mechanically compatible with TO-220AB. Verify gate charge specifications (53nC vs. 42nC) for gate driver compatibility in high-frequency switching applications.

Q: Why is FCP4N60 listed as a substitute if it has lower current rating?

A: FCP4N60 is listed based on the provided substitute data but does not meet the minimum continuous drain current specification of 6.2A. This part is suitable only for applications with reduced current demands below 3.9A and should not be selected for general replacement of the IRFBC40A.

Q: What are the package differences between TO-220AB and TO-220?

A: Both TO-220AB and TO-220 are through-hole packages with identical pin configurations and mechanical compatibility. The designations refer to minor manufacturing variations. All substitute parts listed are compatible with existing TO-220AB footprints.

Q: Are all substitute parts RoHS3 compliant?

A: IRFBC40APBF, STP7N60M2, STP9NK60Z, STP6N62K3, and STP10NK80Z are all RoHS3 compliant. FCP4N60 compliance status is not specified in the provided data. For applications requiring RoHS3 compliance, select from the STMicroelectronics or Vishay Siliconix options.

Q: What is the significance of gate charge (Qg) differences between substitute parts?

A: Gate charge affects gate driver requirements and switching speed. IRFBC40A has 42nC gate charge. STP9NK60Z has 53nC (higher), requiring slightly more gate drive energy. STP7N60M2 has 8.8nC (lower), requiring less gate drive energy. FCP4N60 has 16.6nC. Verify gate driver capability when selecting substitutes with significantly different gate charge values.

Q: Can STP10NK80Z be used in place of IRFBC40A for lower voltage applications?

A: STP10NK80Z is rated for 800V, which exceeds the 600V requirement of IRFBC40A. While the higher voltage rating provides design margin, the increased input capacitance (2180pF vs. 1036pF) and gate charge (72nC vs. 42nC) may require gate driver adjustments. This part is recommended only when the additional voltage rating is required by circuit design.

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