IRFBC30STRR Equivalent & Substitute Parts

Part Overview

The IRFBC30STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with a continuous drain current of 3.6A at 25°C. This device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The part is currently in Active product status with 750 pieces available in inventory.

Substitute parts are identified when electrical characteristics, mechanical packaging, and thermal specifications remain identical across different manufacturing batches or packaging configurations. Identifying equivalent parts ensures design flexibility, supply chain continuity, and access to higher inventory levels when the primary part number becomes constrained.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Tc)
On-State Resistance (Rds On Max) @ 2.2A, 10V	2.2	Ohm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	4	V
Gate Charge (Qg Max) @ 10V	31	nC
Input Capacitance (Ciss Max) @ 25V	660	pF
Power Dissipation (Max)	3.1 (Ta), 74 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Gate Voltage (Vgs Max)	±20	V

Substitute Part Grouping Explanation

Substitution of the IRFBC30STRR is determined by strict equivalence across the following electrical and mechanical parameters:

Electrical Equivalence Criteria:

Drain to Source Voltage (Vdss): 600V
Continuous Drain Current (Id) @ 25°C: 3.6A
On-State Resistance (Rds On): 2.2 Ohm @ 2.2A, 10V
Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
Gate Charge (Qg): 31 nC @ 10V
Input Capacitance (Ciss): 660 pF @ 25V
Power Dissipation: 3.1W (Ta), 74W (Tc)
Operating Temperature: -55°C to 150°C

Mechanical Equivalence Criteria:

Package Type: TO-263 (D2PAK), Surface Mount
Lead Configuration: 2 Leads + Tab

Technology Equivalence:

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Parts meeting all of these criteria are classified as parametric equivalents and direct substitutes for the IRFBC30STRR.

Parameter Comparison

Parameter	IRFBC30STRR	IRFBC30STRLPBF	Match
Manufacturer	Vishay Siliconix	Vishay Siliconix	Yes
FET Type	N-Channel	N-Channel	Yes
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	Yes
Drain to Source Voltage (Vdss)	600 V	600 V	Yes
Continuous Drain Current (Id) @ 25°C	3.6A (Tc)	3.6A (Tc)	Yes
Drive Voltage (Max Rds On)	10V	10V	Yes
Rds On (Max) @ Id, Vgs	2.2Ohm @ 2.2A, 10V	2.2Ohm @ 2.2A, 10V	Yes
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	Yes
Gate Charge (Qg) (Max) @ Vgs	31 nC @ 10 V	31 nC @ 10 V	Yes
Vgs (Max)	±20V	±20V	Yes
Input Capacitance (Ciss) (Max) @ Vds	660 pF @ 25 V	660 pF @ 25 V	Yes
Power Dissipation (Max)	3.1W (Ta), 74W (Tc)	3.1W (Ta), 74W (Tc)	Yes
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	Yes
Mounting Type	Surface Mount	Surface Mount	Yes
Supplier Device Package	TO-263 (D2PAK)	TO-263 (D2PAK)	Yes
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Yes
Base Product Number	IRFBC30	IRFBC30	Yes
Product Status	Active	Active	Yes
Packaging Configuration	Bulk	Cut Tape (CT)	Different
RoHS Status	RoHS non-compliant	ROHS3 Compliant	Different
Inventory Available	750 Pcs	24675 Pcs	Different

Engineering Selection Recommendations

The IRFBC30STRLPBF is a direct parametric equivalent to the IRFBC30STRR. Both parts share identical electrical specifications, thermal characteristics, and mechanical packaging. The primary differences are packaging configuration and regulatory compliance status.

IRFBC30STRR is suitable for applications where RoHS non-compliant components are acceptable and bulk packaging is preferred. Current inventory is 750 pieces.

IRFBC30STRLPBF is suitable for applications requiring ROHS3 compliance and is available in Cut Tape (CT) packaging configuration. This part number offers significantly higher inventory availability at 24,675 pieces, providing greater supply chain flexibility.

Both parts are Active products from Vishay Siliconix and are suitable for identical circuit applications without modification to PCB layout, thermal management, or gate drive circuitry.

Frequently Asked Questions (FAQ)

Q: Can IRFBC30STRLPBF be used as a direct replacement for IRFBC30STRR?

A: Yes. Both parts are parametric equivalents with identical electrical characteristics, thermal specifications, and mechanical packaging. The IRFBC30STRLPBF differs only in packaging configuration (Cut Tape versus Bulk) and RoHS compliance status (ROHS3 Compliant versus non-compliant).

Q: What is the difference between the packaging configurations?

A: IRFBC30STRR is supplied in bulk packaging, while IRFBC30STRLPBF is supplied in Cut Tape (CT) configuration. Cut Tape packaging is suitable for automated pick-and-place assembly processes, while bulk packaging is typically used for manual assembly or reel-based automated processes.

Q: Are there any thermal or electrical performance differences between these parts?

A: No. Both parts have identical power dissipation ratings (3.1W at Ta, 74W at Tc), operating temperature ranges (-55°C to 150°C), and all electrical parameters including Vdss, Id, Rds On, gate charge, and input capacitance.

Q: Which part should be selected for new designs?

A: Selection depends on application requirements. For designs requiring ROHS3 compliance, IRFBC30STRLPBF is the appropriate choice. For applications where RoHS compliance is not required, either part is suitable. IRFBC30STRLPBF offers higher inventory availability.

Q: Is the TO-263 (D2PAK) package identical for both parts?

A: Yes. Both parts use the same TO-263-3 D2PAK (2 Leads + Tab) surface mount package with identical pin configuration, lead spacing, and thermal characteristics. PCB footprints are interchangeable.

Q: What is the gate voltage rating for these MOSFETs?

A: The maximum gate voltage (Vgs Max) is ±20V for both parts. Gate drive circuits must not exceed this voltage to prevent gate oxide damage.

Q: Are these parts suitable for high-frequency switching applications?

A: Both parts have a gate charge (Qg) of 31 nC at 10V and input capacitance (Ciss) of 660 pF at 25V. These parameters determine switching speed and are identical for both parts. Suitability for specific frequency applications depends on the gate drive circuit design and application requirements.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message