IRFBC30S N-Channel MOSFET 600V 3.6A Equivalent & Substitute Parts

Part Overview

The IRFBC30S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 3.6A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is designed for high-voltage switching applications. The IRFBC30S is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating modern component availability and compliance requirements.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	600	V
Continuous Drain Current (Id) @ 25°C	3.6	A (Tc)
On-State Resistance (Rds On) @ 2.2A, 10V	2.2	Ohm
Gate Threshold Voltage (Vgs(th)) @ 250µA	4	V
Gate Charge (Qg) @ 10V	31	nC
Power Dissipation (Max)	3.1 (Ta), 74 (Tc)	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
Gate Voltage (Max)	±20	V
Input Capacitance (Ciss) @ 25V	660	pF

Substitute Part Grouping Explanation

Substitution of the IRFBC30S is determined by strict adherence to the following electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 3.6A at 25°C
Package Type: Must be TO-263 (D2PAK) Surface Mount
Gate Voltage Rating (Vgs Max): Must accommodate ±20V minimum
Operating Temperature Range: Must span -55°C to 150°C

Secondary Compatibility Parameters:

On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation: Higher ratings provide thermal margin

Substitute parts are grouped into two categories: parametric equivalents (identical electrical specifications) and manufacturer-recommended alternatives (enhanced performance within the same voltage and current class).

Parameter Comparison

Parameter	IRFBC30S	IRFBC30SPBF	STB4NK60ZT4	STB6N60M2
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics
Vdss (V)	600	600	600	600
Id @ 25°C (A)	3.6	3.6	4.0	4.5
Rds On @ 10V (Ohm)	2.2 @ 2.2A	2.2 @ 2.2A	2.0 @ 2A	1.2 @ 2.25A
Vgs(th) @ Id (V)	4 @ 250µA	4 @ 250µA	4.5 @ 50µA	4 @ 250µA
Qg @ 10V (nC)	31	31	26	8
Vgs Max (V)	±20	±20	±30	±25
Ciss @ 25V (pF)	660	660	510	232
Power Dissipation (W)	74 (Tc)	74 (Tc)	70 (Tc)	60 (Tc)
Operating Temp (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)	TO-263 (D2PAK)
Product Status	Obsolete	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFBC30SPBF (Vishay Siliconix)

The IRFBC30SPBF is a parametric equivalent to the IRFBC30S with identical electrical specifications. This part maintains the same 600V Vdss, 3.6A continuous drain current, 2.2Ohm Rds On, and 31nC gate charge. The primary distinction is product status: IRFBC30SPBF is active and ROHS3 compliant, whereas the IRFBC30S is obsolete and non-compliant. This part is the direct replacement for legacy designs requiring no circuit modification. Packaging is supplied in Tube format.

STB4NK60ZT4 (STMicroelectronics)

The STB4NK60ZT4 is a manufacturer-recommended substitute offering enhanced current capability at 4.0A continuous drain current, exceeding the IRFBC30S specification of 3.6A. This part maintains 600V Vdss and improves on-state resistance to 2.0Ohm with reduced gate charge of 26nC. The STB4NK60ZT4 is part of the SuperMESH™ series and is ROHS3 compliant. This substitute is suitable for applications where improved thermal performance and reduced switching losses are beneficial. Packaging is supplied in Cut Tape and Digi-Reel® formats.

STB6N60M2 (STMicroelectronics)

The STB6N60M2 is a manufacturer-recommended substitute offering the highest performance enhancement within the 600V class. This part delivers 4.5A continuous drain current with significantly improved on-state resistance of 1.2Ohm and minimal gate charge of 8nC. The STB6N60M2 is part of the MDmesh™ II Plus series and is ROHS3 compliant. This substitute provides the greatest thermal margin and lowest switching losses, making it suitable for high-efficiency applications. Packaging is supplied in Tape & Reel format.

All substitute parts maintain compatibility with the TO-263 (D2PAK) footprint and operating temperature range of -55°C to 150°C. Selection between substitutes depends on application requirements for current capacity, thermal dissipation, and switching performance.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC30SPBF be used as a direct replacement for the IRFBC30S?

A: Yes. The IRFBC30SPBF is a parametric equivalent with identical electrical specifications: 600V Vdss, 3.6A continuous drain current, 2.2Ohm Rds On, and 31nC gate charge. Both parts use the same TO-263 (D2PAK) package. The primary difference is that IRFBC30SPBF is active and ROHS3 compliant, while IRFBC30S is obsolete. No circuit modifications are required.

Q: What are the advantages of using STB4NK60ZT4 or STB6N60M2 over IRFBC30SPBF?

A: Both STMicroelectronics alternatives offer enhanced performance. STB4NK60ZT4 provides 4.0A current capability with 2.0Ohm Rds On and 26nC gate charge. STB6N60M2 provides 4.5A current capability with 1.2Ohm Rds On and 8nC gate charge. These improvements reduce on-state power dissipation and switching losses, resulting in lower junction temperatures and improved efficiency. Both maintain 600V Vdss and TO-263 packaging.

Q: Are all substitute parts compatible with the same PCB footprint?

A: Yes. All substitute parts use the TO-263 (D2PAK) Surface Mount package with identical pin configuration and footprint dimensions. Direct PCB substitution is possible without layout modifications.

Q: What is the impact of lower gate charge on circuit performance?

A: Lower gate charge reduces the energy required to switch the MOSFET on and off, decreasing switching losses and improving overall circuit efficiency. STB6N60M2 with 8nC gate charge provides the lowest switching losses compared to IRFBC30S at 31nC.

Q: Do all substitute parts meet the same compliance standards?

A: IRFBC30SPBF, STB4NK60ZT4, and STB6N60M2 are all ROHS3 compliant and REACH unaffected. The original IRFBC30S is non-compliant. For new designs or compliance-sensitive applications, any of the three active substitutes are suitable.

Q: Can STB6N60M2 be used in applications designed for 3.6A continuous current?

A: Yes. STB6N60M2 is rated for 4.5A continuous drain current, which exceeds the 3.6A requirement. The part operates within specification at lower current levels. The improved Rds On of 1.2Ohm versus 2.2Ohm results in lower power dissipation at the same current, providing thermal margin.

Q: What is the difference between Tc and Ta power dissipation ratings?

A: Tc (case temperature) represents power dissipation with the case at 25°C, typically used for thermal calculations with external heat sinking. Ta (ambient temperature) represents power dissipation in free air at 25°C ambient. IRFBC30S and IRFBC30SPBF are rated at 74W (Tc) and 3.1W (Ta). STB4NK60ZT4 is rated at 70W (Tc). STB6N60M2 is rated at 60W (Tc).

Q: Are there any gate voltage differences between the substitute parts?

A: Yes. IRFBC30S and IRFBC30SPBF are rated for ±20V maximum gate voltage. STB4NK60ZT4 is rated for ±30V, and STB6N60M2 is rated for ±25V. All substitutes accommodate the ±20V requirement of the original part. Higher gate voltage ratings provide additional design margin.

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