IRFBC30LPBF N-Channel 600V 3.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC30LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 3.6A continuous drain current. The device is packaged in TO-262-3 (Long Leads) configuration and is designed for through-hole mounting applications. This part is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating available packaging options.

Substiute Parts

IRFBC30LPBF
Vishay SiliconixIn Stock: 3821IRFBC30LPBF Datasheet
IRFBC30LPBF
Current Part
IRFBC30ALPBF
Vishay SiliconixIn Stock: 2174IRFBC30ALPBF Datasheet
IRFBC30ALPBF
Direct
STI4N62K3
STMicroelectronicsIn Stock: 2307STI4N62K3 Datasheet
STI4N62K3
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 3.6 A (Tc)
Drive Voltage (Max Rds On) 10 V
Rds On (Max) @ Id, Vgs 2.2 Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 25V
Power Dissipation (Max) 3.1 (Ta), 74 (Tc) W
Operating Temperature -55 to 150 °C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-262-3
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRFBC30LPBF is determined by equivalence across the following critical parameters:

Electrical Equivalence Criteria:

  • FET Type: N-Channel topology
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): Minimum 600V
  • Current - Continuous Drain (Id): Minimum 3.6A at Tc
  • Drive Voltage: 10V specification
  • Rds On (Max): Maximum 2.2 Ohm @ specified Id and Vgs
  • Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical & Compliance Equivalence Criteria:

  • Mounting Type: Through Hole
  • Package Compatibility: TO-262-3 Long Leads, I2PAK, or TO-262AA
  • RoHS Status: ROHS3 Compliant
  • Moisture Sensitivity Level: 1 (Unlimited)

Substitute parts must satisfy all electrical parameters at or above the specified ratings and maintain through-hole mounting compatibility. Package variants within the TO-262 family are acceptable provided pin configuration and lead geometry support direct board-level substitution.

Parameter Comparison

Parameter IRFBC30LPBF (Main) IRFBC30ALPBF (Substitute) STI4N62K3 (Substitute) Unit
Manufacturer Vishay Siliconix Vishay Siliconix STMicroelectronics
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 600 620 V
Current - Continuous Drain (Id) @ 25°C 3.6 3.6 3.8 A (Tc)
Drive Voltage (Max Rds On) 10 10 10 V
Rds On (Max) @ Id, Vgs 2.2 @ 2.2A, 10V 2.2 @ 2.2A, 10V 2.0 @ 1.9A, 10V Ohm
Vgs(th) (Max) @ Id 4 @ 250µA 4.5 @ 250µA 4.5 @ 50µA V
Gate Charge (Qg) (Max) @ Vgs 31 @ 10V 23 @ 10V 22 @ 10V nC
Vgs (Max) ±20 ±30 ±30 V
Input Capacitance (Ciss) (Max) @ Vds 660 @ 25V 510 @ 25V 550 @ 50V pF
Power Dissipation (Max) 74 (Tc) 74 (Tc) 70 (Tc) W
Operating Temperature -55 to 150 -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-262-3 I2PAK I2PAK
Product Status Obsolete Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRFBC30ALPBF (Vishay Siliconix)

The IRFBC30ALPBF is a direct electrical equivalent to the IRFBC30LPBF, manufactured by the same supplier. Both devices share identical Vdss (600V), Id (3.6A), and Rds On (2.2 Ohm @ 2.2A, 10V) specifications. The IRFBC30ALPBF is currently in active product status, ensuring long-term availability and supply chain continuity. The primary difference is packaging: IRFBC30ALPBF uses I2PAK configuration instead of TO-262-3 Long Leads. Both packages are within the TO-262 family and support through-hole mounting. The IRFBC30ALPBF exhibits lower gate charge (23 nC versus 31 nC) and input capacitance (510 pF versus 660 pF), providing improved switching performance. Maximum gate voltage rating is increased to ±30V. ROHS3 compliance and MSL 1 rating are maintained. This substitute is recommended for direct replacement where I2PAK package compatibility exists.

STI4N62K3 (STMicroelectronics)

The STI4N62K3 is a functionally equivalent alternative from STMicroelectronics, rated for 620V Vdss and 3.8A Id, exceeding the IRFBC30LPBF specifications. The device is part of the SuperMESH3™ series and is in active product status. Electrical performance is superior: Rds On is reduced to 2.0 Ohm @ 1.9A, 10V, and gate charge is minimized to 22 nC @ 10V. Input capacitance is 550 pF @ 50V. The STI4N62K3 is packaged in I2PAK configuration and supports through-hole mounting. Operating temperature range (-55°C to 150°C) and compliance certifications (ROHS3, MSL 1) are equivalent. This substitute is suitable for applications requiring enhanced voltage and current margins, with the trade-off of package format change from TO-262-3 Long Leads to I2PAK.

Product Status Consideration

The IRFBC30LPBF is classified as obsolete. Both substitute parts are in active product status, ensuring continued manufacturing, technical support, and supply availability. Selection between IRFBC30ALPBF and STI4N62K3 depends on package compatibility requirements and performance optimization objectives.

Frequently Asked Questions (FAQ)

Q: Can IRFBC30ALPBF directly replace IRFBC30LPBF on existing PCBs?

A: IRFBC30ALPBF is electrically equivalent and uses I2PAK packaging, which is within the TO-262 family. Direct board-level substitution is possible if the PCB footprint accommodates I2PAK lead geometry and spacing. Verification of pin alignment and lead length compatibility is required before implementation.

Q: What are the key electrical differences between IRFBC30LPBF and STI4N62K3?

A: STI4N62K3 exceeds IRFBC30LPBF specifications in Vdss (620V versus 600V) and Id (3.8A versus 3.6A). Rds On is lower (2.0 Ohm versus 2.2 Ohm), and gate charge is reduced (22 nC versus 31 nC). These improvements result in lower conduction losses and faster switching. Both devices operate across the same temperature range and maintain equivalent compliance certifications.

Q: Why is gate charge important in MOSFET substitution?

A: Gate charge (Qg) determines the energy required to switch the transistor on and off. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications. IRFBC30ALPBF (23 nC) and STI4N62K3 (22 nC) both offer reduced gate charge compared to IRFBC30LPBF (31 nC), providing performance benefits in switching circuits.

Q: Are all three parts RoHS3 compliant?

A: Yes. IRFBC30LPBF, IRFBC30ALPBF, and STI4N62K3 are all ROHS3 compliant with MSL 1 (Unlimited) moisture sensitivity rating. Compliance certifications are equivalent across all three devices.

Q: What is the difference between TO-262-3 Long Leads and I2PAK packaging?

A: Both are through-hole packages within the TO-262 family. TO-262-3 Long Leads features extended lead length for specific PCB applications. I2PAK is a variant with different lead geometry. Package selection depends on PCB footprint design and mechanical requirements. Lead spacing and hole diameter compatibility must be verified before substitution.

Q: Is STI4N62K3 a recommended substitute for all IRFBC30LPBF applications?

A: STI4N62K3 is functionally equivalent with superior electrical specifications (higher voltage and current ratings, lower Rds On and gate charge). It is suitable for applications where I2PAK packaging is compatible with the PCB design. The higher voltage rating (620V) provides additional design margin in high-voltage circuits.

Q: What is the product status significance for component selection?

A: IRFBC30LPBF is obsolete, meaning manufacturing has been discontinued. IRFBC30ALPBF and STI4N62K3 are in active product status, ensuring ongoing availability, technical support, and supply chain reliability. Active status is preferred for new designs and long-term production support.

Q: Can input capacitance differences affect circuit performance?

A: Yes. Input capacitance (Ciss) influences gate drive requirements and switching speed. IRFBC30ALPBF (510 pF) and STI4N62K3 (550 pF) both exhibit lower input capacitance than IRFBC30LPBF (660 pF), resulting in faster switching response and reduced gate drive power consumption. Circuit design may require gate driver adjustment based on capacitance values.

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