IRFBC30L N-Channel MOSFET 600V 3.6A Equivalent & Substitute Parts

Part Overview

The IRFBC30L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 3.6A continuous drain current. The device is packaged in a Through Hole I2PAK (TO-262-3) configuration and is designed for high-voltage switching applications. The IRFBC30L is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. Substitute parts must maintain electrical compatibility across voltage, current, and thermal specifications while accommodating the same physical package footprint.

Substiute Parts

IRFBC30L

Vishay SiliconixIn Stock: 1631IRFBC30L Datasheet

Current PartRFQ

STI4N62K3

STMicroelectronicsIn Stock: 2307STI4N62K3 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRFBC30L are selected based on strict electrical and mechanical compatibility criteria. The following parameters define the substitution scope:

Electrical Compatibility Criteria:

• FET Type: N-Channel topology must be maintained
• Drain to Source Voltage (Vdss): Substitute must equal or exceed 600V
• Continuous Drain Current (Id): Substitute must equal or exceed 3.6A at 25°C
• On-State Resistance (Rds On): Substitute must not exceed 2.2 Ohm at specified conditions
• Gate Threshold Voltage (Vgs(th)): Must remain within acceptable switching range
• Gate Charge (Qg): Lower values indicate improved switching performance
• Power Dissipation: Substitute must support thermal requirements
• Operating Temperature Range: Must encompass -55°C to 150°C

Mechanical Compatibility Criteria:

• Mounting Type: Through Hole configuration required
• Package / Case: TO-262-3 Long Leads, I2PAK, or TO-262AA footprint required

Substitutes meeting these criteria are electrically and mechanically interchangeable within the specified application envelope.

Parameter Comparison

Engineering Selection Recommendations

STI4N62K3 as Primary Substitute:

The STI4N62K3 manufactured by STMicroelectronics is a direct electrical and mechanical substitute for the IRFBC30L. The STI4N62K3 meets or exceeds all critical electrical parameters: Vdss rating of 620V exceeds the 600V requirement, continuous drain current of 3.8A exceeds 3.6A, and on-state resistance of 2.0 Ohm is lower than the 2.2 Ohm maximum. The device maintains identical Through Hole mounting and TO-262-3 I2PAK package footprint, ensuring direct PCB compatibility without layout modifications.

Compliance and Product Status:

The STI4N62K3 is classified as Active product status, providing long-term availability and supply chain stability compared to the obsolete IRFBC30L. The STI4N62K3 is ROHS3 compliant, meeting current environmental and regulatory requirements. Both devices maintain identical operating temperature range (-55°C to 150°C) and moisture sensitivity level (MSL 1, Unlimited).

Performance Advantages:

The STI4N62K3 demonstrates improved switching characteristics with reduced gate charge (22 nC versus 31 nC), lower input capacitance (550 pF versus 660 pF), and higher maximum gate voltage rating (±30V versus ±20V). These characteristics result in faster switching transitions and reduced gate drive power requirements.

Frequently Asked Questions (FAQ)

Q: Can the STI4N62K3 directly replace the IRFBC30L without PCB modifications?

A: Yes. Both devices share identical Through Hole mounting type and TO-262-3 I2PAK package footprint. No PCB layout changes are required for mechanical or electrical integration.

Q: What are the key electrical differences between these parts?

A: The STI4N62K3 provides higher voltage rating (620V versus 600V), higher current capability (3.8A versus 3.6A), lower on-state resistance (2.0 Ohm versus 2.2 Ohm), and reduced gate charge (22 nC versus 31 nC). These differences represent performance improvements within the same functional category.

Q: Is the STI4N62K3 suitable for applications originally designed for the IRFBC30L?

A: Yes. The STI4N62K3 meets or exceeds all electrical specifications of the IRFBC30L across voltage, current, thermal, and switching characteristics. The device is electrically and mechanically compatible for direct substitution.

Q: What is the significance of the ROHS3 compliance difference?

A: The STI4N62K3 is ROHS3 compliant, meeting current environmental regulations. The IRFBC30L is RoHS non-compliant, reflecting its obsolete status. For new designs or regulatory compliance requirements, the STI4N62K3 is the appropriate selection.

Q: Are there thermal performance differences between these devices?

A: The STI4N62K3 specifies 70W maximum power dissipation at Tc, compared to 74W for the IRFBC30L at Tc. Both devices maintain identical operating temperature range and thermal characteristics suitable for high-voltage switching applications.

Q: How do gate charge differences affect circuit design?

A: The STI4N62K3 exhibits lower gate charge (22 nC versus 31 nC), resulting in reduced gate drive power requirements and faster switching transitions. Existing gate drive circuits designed for the IRFBC30L will operate with improved performance margins using the STI4N62K3.

Q: What packaging considerations apply to Through Hole I2PAK devices?

A: Both the IRFBC30L and STI4N62K3 use TO-262-3 Long Leads I2PAK packaging with identical lead spacing and mounting hole positions. Standard Through Hole soldering processes and PCB footprints are directly compatible.