IRFBC30AS N-Channel 600V 3.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC30AS is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and dissipates up to 74W at case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	3.6	A (Tc)
Rds On (Max) @ Id, Vgs	2.2	Ohm @ 2.2A, 10V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—

Substitute Part Grouping Explanation

Substitution of the IRFBC30AS is determined by the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): 600V minimum
Continuous Drain Current (Id): 3.6A minimum at 25°C
Gate-Source Voltage (Vgs): ±30V maximum rating
Operating Temperature Range: -55°C to 150°C minimum

Mechanical Compatibility Requirements:

Mounting Type: Surface Mount
Package / Case: TO-263-3 or D2PAK (2 Leads + Tab)

Compliance Considerations:

RoHS Status: Preference for RoHS3 Compliant parts
Moisture Sensitivity Level (MSL): 1 (Unlimited)

Substitute parts must meet or exceed all electrical parameters while maintaining identical mechanical packaging. Parts with higher current ratings, lower on-resistance, or improved thermal characteristics are acceptable substitutes provided they do not exceed maximum voltage or gate-source specifications.

Parameter Comparison

Parameter	IRFBC30AS	IRFBC30ASPBF	STB4NK60ZT4	STB6N60M2
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics	STMicroelectronics
Product Status	Obsolete	Active	Active	Active
FET Type	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	600	600
Id @ 25°C (A)	3.6	3.6	4.0	4.5
Rds On (Max) @ Id, Vgs (Ohm)	2.2 @ 2.2A, 10V	2.2 @ 2.2A, 10V	2.0 @ 2A, 10V	1.2 @ 2.25A, 10V
Gate Charge (Qg) @ 10V (nC)	23	23	26	8
Power Dissipation (Max) (W)	74	74	70	60
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
RoHS Status	Non-compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant
Vgs (Max) (V)	±30	±30	±30	±25

Engineering Selection Recommendations

IRFBC30ASPBF (Vishay Siliconix)

The IRFBC30ASPBF is a direct electrical and mechanical equivalent to the IRFBC30AS. Both parts share identical electrical specifications including 600V Vdss, 3.6A continuous drain current, 2.2Ohm Rds On, and 74W power dissipation. The primary distinction is product status: IRFBC30ASPBF is active and available, whereas IRFBC30AS is obsolete. IRFBC30ASPBF carries ROHS3 compliance and REACH Affected status, making it suitable for applications requiring regulatory compliance. Packaging is Tube format. This part is the preferred direct replacement for the obsolete IRFBC30AS.

STB4NK60ZT4 (STMicroelectronics)

The STB4NK60ZT4 is a functional substitute with enhanced electrical performance. It maintains 600V Vdss and exceeds the minimum current requirement with 4.0A continuous drain current. On-resistance is improved at 2.0Ohm compared to 2.2Ohm. Power dissipation is 70W, slightly lower than the original 74W. Gate charge is marginally higher at 26nC. The part is active, ROHS3 compliant, and available in Cut Tape and Digi-Reel packaging. Operating temperature range is -55°C to 150°C. This part is suitable for applications where improved efficiency and higher current capacity are beneficial.

STB6N60M2 (STMicroelectronics)

The STB6N60M2 is a functional substitute with superior electrical performance characteristics. It maintains 600V Vdss and provides 4.5A continuous drain current, exceeding the original 3.6A specification. On-resistance is significantly improved at 1.2Ohm, reducing conduction losses. Gate charge is substantially lower at 8nC, improving switching speed. Power dissipation is 60W, lower than the original 74W. The part is active, ROHS3 compliant, and available in Tape & Reel packaging. Operating temperature range is -55°C to 150°C. Input capacitance is reduced to 232pF at 100V. Maximum Vgs is ±25V, which is within the ±30V specification of the original part. This part is suitable for applications requiring enhanced efficiency and reduced thermal management requirements.

Frequently Asked Questions (FAQ)

Q: Can IRFBC30ASPBF be used as a direct replacement for IRFBC30AS?

A: Yes. IRFBC30ASPBF is electrically and mechanically identical to IRFBC30AS. Both parts have 600V Vdss, 3.6A continuous drain current, 2.2Ohm Rds On, and identical TO-263 D2PAK packaging. The primary difference is that IRFBC30ASPBF is active and ROHS3 compliant, whereas IRFBC30AS is obsolete.

Q: What are the key differences between STB4NK60ZT4 and STB6N60M2?

A: Both are STMicroelectronics substitutes with 600V Vdss. STB4NK60ZT4 provides 4.0A current and 2.0Ohm Rds On. STB6N60M2 provides 4.5A current and 1.2Ohm Rds On with significantly lower gate charge (8nC vs. 26nC). STB6N60M2 offers superior efficiency and switching performance at the cost of slightly lower maximum Vgs (±25V vs. ±30V).

Q: Are all substitute parts in the same package?

A: Yes. All substitute parts use Surface Mount TO-263-3 D2PAK packaging with 2 Leads + Tab configuration, maintaining identical PCB footprint compatibility with the IRFBC30AS.

Q: What is the significance of lower Rds On in substitute parts?

A: Lower on-resistance reduces conduction losses during operation, resulting in lower heat generation and improved efficiency. STB6N60M2 with 1.2Ohm Rds On dissipates less power than IRFBC30AS with 2.2Ohm Rds On under identical operating conditions.

Q: Are all substitute parts RoHS compliant?

A: IRFBC30ASPBF, STB4NK60ZT4, and STB6N60M2 are all ROHS3 compliant. The original IRFBC30AS is RoHS non-compliant. For applications requiring RoHS compliance, any of the three substitutes are acceptable.

Q: What is the impact of gate charge differences?

A: Gate charge affects switching speed and driver circuit requirements. Lower gate charge (STB6N60M2 at 8nC) enables faster switching with lower driver power consumption compared to higher gate charge parts (IRFBC30AS at 23nC). This is beneficial for high-frequency switching applications.

Q: Can STB6N60M2 be used in all applications designed for IRFBC30AS?

A: STB6N60M2 is suitable for most applications. The maximum Vgs specification is ±25V compared to ±30V for IRFBC30AS. Verify that gate drive circuits do not exceed ±25V. All other electrical parameters meet or exceed IRFBC30AS specifications, and mechanical packaging is identical.

Q: What packaging formats are available for each substitute?

A: IRFBC30ASPBF is supplied in Tube format. STB4NK60ZT4 is supplied in Cut Tape and Digi-Reel format. STB6N60M2 is supplied in Tape & Reel format. Select based on procurement and assembly requirements.

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