IRFBC30A N-Channel 600V 3.6A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFBC30A is an N-Channel metal oxide semiconductor field-effect transistor (MOSFET) manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage and 3.6A continuous drain current in a through-hole TO-220AB package. This device is classified as obsolete product status. Equivalent and substitute parts are necessary to support ongoing applications where the original IRFBC30A is no longer available from primary inventory channels or where design flexibility permits selection of functionally compatible alternatives with improved availability or updated compliance certifications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	3.6	A (Tc)
Rds On (Max) @ Id, Vgs	2.2	Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4.5	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	23	nC @ 10V
Vgs (Max)	±30	V
Input Capacitance (Ciss) (Max) @ Vds	510	pF @ 25V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitute parts for the IRFBC30A are classified into two categories based on electrical and mechanical compatibility:

Direct Equivalents (Parametric Match): Parts that maintain identical or equivalent electrical specifications across all critical parameters including Vdss (600V), Id (3.6A continuous drain current), Rds On (2.2 Ohm @ 2.2A, 10V), gate charge (23 nC @ 10V), and operating temperature range (-55°C to 150°C). These parts are packaged in TO-220-3 through-hole configuration and share the same base product number (IRFBC30) or are direct variants from the same manufacturer.

Manufacturer Recommended Alternatives (Functional Equivalents): Parts from Infineon Technologies that operate at 600V or higher Vdss ratings with equal or superior continuous drain current ratings, matching or exceeding power dissipation capability, and packaged in TO-220-3 through-hole format. These alternatives satisfy the voltage and current envelope of the original part while offering improved gate charge characteristics, lower on-resistance, or enhanced thermal performance. Selection from this category requires verification that the application does not depend on the specific gate charge or input capacitance values of the original IRFBC30A.

Substitution logic is strictly limited to the following parameters:

Drain to Source Voltage (Vdss): Equal to or greater than 600V
Continuous Drain Current (Id): Equal to or greater than 3.6A
Mounting Type: Through Hole
Package: TO-220-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (Ohm)	Qg (nC)	Power Diss. (W)	Temp Range (°C)	Product Status	RoHS Status
IRFBC30A	Vishay Siliconix	600	3.6	2.2 @ 2.2A, 10V	23 @ 10V	74	-55 to 150	Obsolete	Non-compliant
IRFBC30APBF	Vishay Siliconix	600	3.6	2.2 @ 2.2A, 10V	23 @ 10V	74	-55 to 150	Active	ROHS3 Compliant
IRFBC30APBF-BE3	Vishay Siliconix	600	3.6	2.2 @ 2.2A, 10V	23 @ 10V	74	-55 to 150	Active	Not specified
IPP60R165CPXKSA1	Infineon Technologies	600	21	0.165 @ 12A, 10V	52 @ 10V	192	-55 to 150	Not For New Designs	ROHS3 Compliant
IPP60R199CPXKSA1	Infineon Technologies	650	16	0.199 @ 9.9A, 10V	43 @ 10V	139	-55 to 150	Not For New Designs	ROHS3 Compliant
IPP60R125CPXKSA1	Infineon Technologies	650	25	0.125 @ 16A, 10V	70 @ 10V	208	-55 to 150	Not For New Designs	ROHS3 Compliant
IPP60R250CPXKSA1	Infineon Technologies	650	12	0.250 @ 7.8A, 10V	35 @ 10V	104	-55 to 150	Obsolete	ROHS3 Compliant
IPP50R199CPXKSA1	Infineon Technologies	550	17	0.199 @ 9.9A, 10V	45 @ 10V	139	-55 to 150	Not For New Designs	ROHS3 Compliant
IPP015N04NGXKSA1	Infineon Technologies	40	120	0.0015 @ 100A, 10V	250 @ 10V	250	-55 to 175	Active	ROHS3 Compliant
IPP80N03S4L03AKSA1	Infineon Technologies	30	80	0.0027 @ 80A, 10V	140 @ 10V	136	-55 to 175	Active	ROHS3 Compliant
IPP80N08S2L07AKSA1	Infineon Technologies	75	80	0.0071 @ 80A, 10V	233 @ 10V	300	-55 to 175	Obsolete	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation - Direct Equivalent: IRFBC30APBF is the preferred substitute for the obsolete IRFBC30A. This part maintains identical electrical specifications across all critical parameters (Vdss, Id, Rds On, Qg, power dissipation, and operating temperature range) while offering active product status and ROHS3 compliance. The part is available in tube packaging with 2093 units in stock. No circuit redesign or thermal management modifications are required.

Secondary Recommendation - Direct Equivalent Variant: IRFBC30APBF-BE3 provides an alternative direct equivalent with identical electrical performance and active product status. This variant is available with 738 units in stock. Selection between IRFBC30APBF and IRFBC30APBF-BE3 depends on packaging and supply chain requirements.

Alternative Recommendation - Functional Equivalent (Higher Current Rating): IPP60R165CPXKSA1 (Infineon CoolMOS™ series) is suitable for applications where the 3.6A continuous drain current requirement can be satisfied by a higher-rated device. This part operates at 600V Vdss (matching the original specification), provides 21A continuous drain current, and delivers superior on-resistance (0.165 Ohm vs. 2.2 Ohm). Power dissipation capability is 192W compared to 74W in the original part. Product status is "Not For New Designs," indicating this is a legacy device from Infineon. ROHS3 compliance is confirmed.

Alternative Recommendation - Functional Equivalent (Higher Voltage Rating): IPP60R199CPXKSA1 and IPP60R250CPXKSA1 (Infineon CoolMOS™ series) operate at 650V Vdss, exceeding the original 600V specification. Both parts provide continuous drain current ratings (16A and 12A respectively) that exceed the 3.6A requirement. These alternatives offer significantly lower on-resistance and higher power dissipation capability. Both carry "Not For New Designs" status and ROHS3 compliance.

Not Recommended - Voltage Mismatch: IPP015N04NGXKSA1 and IPP80N03S4L03AKSA1 operate at 40V and 30V Vdss respectively, falling below the 600V requirement of the original IRFBC30A. These parts are unsuitable for direct substitution in applications requiring 600V blocking capability.

Not Recommended - Voltage Mismatch: IPP50R199CPXKSA1 operates at 550V Vdss, which is below the 600V specification of the original part. This device does not meet the voltage envelope requirement.

Not Recommended - Voltage Mismatch: IPP80N08S2L07AKSA1 operates at 75V Vdss, which is significantly below the 600V requirement and is unsuitable for this application.

Frequently Asked Questions (FAQ)

Q: Can IRFBC30APBF be used as a direct replacement for IRFBC30A without circuit modification?

A: Yes. IRFBC30APBF maintains identical electrical specifications for all critical parameters including Vdss (600V), continuous drain current (3.6A), on-resistance (2.2 Ohm @ 2.2A, 10V), gate charge (23 nC @ 10V), and operating temperature range (-55°C to 150°C). The TO-220-3 package and through-hole mounting are identical. No circuit redesign is required.

Q: What is the difference between IRFBC30APBF and IRFBC30APBF-BE3?

A: Both parts are direct electrical equivalents with identical specifications. The difference lies in packaging designation and supply chain sourcing. IRFBC30APBF is available in tube packaging with higher inventory (2093 units). IRFBC30APBF-BE3 is also tube-packaged with lower inventory (738 units). Selection depends on availability and procurement requirements.

Q: Why is the IRFBC30A classified as obsolete?

A: The IRFBC30A is marked as obsolete by Vishay Siliconix, indicating it has been discontinued from active production. The active equivalent IRFBC30APBF provides identical performance with updated RoHS3 compliance and continued manufacturing support.

Q: Can Infineon IPP60R165CPXKSA1 replace the IRFBC30A in all applications?

A: IPP60R165CPXKSA1 is a functional equivalent suitable for applications where the 3.6A continuous drain current requirement is satisfied by a higher-rated device (21A). The part maintains 600V Vdss matching the original specification. However, this device carries "Not For New Designs" status from Infineon, indicating it is a legacy product. The significantly lower on-resistance (0.165 Ohm vs. 2.2 Ohm) and higher gate charge (52 nC vs. 23 nC) may affect circuit behavior in applications sensitive to switching speed or gate drive requirements. Verification is required for applications with specific gate charge or switching frequency constraints.

Q: What is the significance of RoHS compliance status in selecting a substitute?

A: The original IRFBC30A is RoHS non-compliant. IRFBC30APBF and IRFBC30APBF-BE3 are ROHS3 compliant, meeting current environmental and regulatory requirements for electronic components. If the application or end-market requires RoHS compliance, the Vishay equivalents (IRFBC30APBF or IRFBC30APBF-BE3) are mandatory selections. All Infineon alternatives listed are ROHS3 compliant.

Q: Are there any thermal management differences between the IRFBC30A and its substitutes?

A: The IRFBC30A and its direct equivalents (IRFBC30APBF, IRFBC30APBF-BE3) share identical power dissipation ratings (74W @ Tc). Thermal management requirements remain unchanged. Infineon alternatives such as IPP60R165CPXKSA1 offer higher power dissipation capability (192W), which may reduce thermal stress in applications operating near the original device's power limit, but this is not a requirement for substitution.

Q: Can lower voltage-rated devices such as IPP50R199CPXKSA1 (550V) be used instead of the 600V IRFBC30A?

A: No. IPP50R199CPXKSA1 operates at 550V Vdss, which is below the 600V specification of the IRFBC30A. Using a lower voltage-rated device in an application designed for 600V operation creates risk of device failure and circuit malfunction. Substitution requires equal or greater Vdss rating.

Q: What packaging options are available for IRFBC30A substitutes?

A: All recommended substitutes are packaged in TO-220-3 through-hole configuration, matching the original IRFBC30A. IRFBC30APBF and IRFBC30APBF-BE3 are supplied in tube packaging. Infineon alternatives are supplied in tube packaging with designation PG-TO220-3 or PG-TO220-3-1. No surface-mount or alternative package options are available among the listed substitutes.

Q: Is the operating temperature range identical across all substitutes?

A: The Vishay direct equivalents (IRFBC30APBF, IRFBC30APBF-BE3) maintain the original operating temperature range of -55°C to 150°C (TJ). Most Infineon alternatives extend the upper temperature limit to 175°C (TJ), providing improved thermal margin. This difference does not prevent substitution but may offer operational advantages in high-temperature environments.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message