IRFBC30 N-Channel MOSFET 600V 3.6A Equivalent & Substitute Parts

Part Overview

The IRFBC30 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 3.6A continuous drain current at 25°C. The device is packaged in a Through Hole TO-220AB configuration and is designed for power switching applications requiring high voltage operation.

The IRFBC30 is classified as Obsolete. Equivalent and substitute parts are necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades. Substitute devices must maintain electrical compatibility across critical parameters including voltage rating, current capacity, on-resistance, and thermal characteristics.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	3.6	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	2.2	Ohm @ 2.2A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	31	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	660	pF @ 25V
Power Dissipation (Max)	74	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitute parts for the IRFBC30 are classified into two categories based on electrical and mechanical compatibility:

Direct Equivalents (Parametric Match): Parts that maintain identical or equivalent electrical specifications across all critical parameters. These devices share the same Vdss (600V), similar Id ratings (3.6A to 4.5A), matching Rds On characteristics at 10V gate drive, and identical TO-220-3 package configuration. Direct equivalents include IRFBC30PBF and IRFBC30PBF-BE3.

Functional Substitutes (Enhanced Performance): Parts that exceed the IRFBC30 specifications while maintaining backward compatibility. These devices operate at the same 600V Vdss rating but offer higher continuous drain current (4A to 5.5A), lower or equivalent on-resistance, and improved thermal performance. Functional substitutes include AOT4N60, FDP5N60NZ, FQP6N60C, and STP4NK60Z.

Substitution eligibility is determined by the following criteria:

Drain-to-Source Voltage (Vdss) must equal or exceed 600V
Continuous Drain Current (Id) must equal or exceed 3.6A at 25°C
On-Resistance (Rds On) at 10V gate drive must not exceed 2.2 Ohm
Gate threshold voltage (Vgs(th)) must be compatible with 10V drive circuits
Mounting type must be Through Hole with TO-220-3 package configuration
Operating temperature range must encompass -55°C to 150°C

Parameter Comparison

Parameter	IRFBC30	IRFBC30PBF	IRFBC30PBF-BE3	AOT4N60	FDP5N60NZ	FQP6N60C	STP4NK60Z
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Alpha & Omega Semiconductor Inc.	onsemi	Fairchild Semiconductor	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Vdss (V)	600	600	600	600	600	600	600
Id @ 25°C (A)	3.6	3.6	3.6	4	4.5	5.5	4
Rds On (Max) @ 10V (Ohm)	2.2	2.2	2.2	2.2	2	2	2
Vgs(th) (Max) @ 250µA (V)	4	4	4	4.5	5	4	4.5
Gate Charge (Qg) @ 10V (nC)	31	31	31	18	13	20	26
Vgs (Max) (V)	±20	±20	±20	±30	±25	±30	±30
Ciss @ 25V (pF)	660	660	660	615	600	810	510
Power Dissipation (Max) (W)	74	74	74	104	100	125	70
Operating Temperature (°C)	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150	-55 to 150
Package / Case	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Active	Not For New Designs	Obsolete	Active	Active
RoHS Status	Non-compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant

Engineering Selection Recommendations

For Direct Replacement (Identical Specifications):

IRFBC30PBF is the primary direct replacement for the obsolete IRFBC30. Both devices are manufactured by Vishay Siliconix and maintain identical electrical parameters across all critical specifications. IRFBC30PBF carries Active product status and is ROHS3 compliant, making it suitable for new production designs. IRFBC30PBF-BE3 provides an alternative direct equivalent with identical electrical characteristics and Active product status.

For Enhanced Performance Applications:

STP4NK60Z (STMicroelectronics) is recommended for applications requiring improved thermal performance. This device maintains the 600V Vdss rating and 4A continuous drain current while reducing power dissipation to 70W compared to the IRFBC30's 74W. STP4NK60Z is Active, ROHS3 compliant, and features SuperMESH™ technology.

FQP6N60C (Fairchild Semiconductor) is suitable for applications requiring higher current capacity. This device provides 5.5A continuous drain current at 25°C with 125W power dissipation, offering significant performance headroom. FQP6N60C is Active and available in high inventory quantities.

For Legacy System Maintenance:

AOT4N60 (Alpha & Omega Semiconductor Inc.) and FDP5N60NZ (onsemi) are functional substitutes with enhanced current ratings. Both devices maintain 600V Vdss compatibility. AOT4N60 is classified as Not For New Designs, while FDP5N60NZ is Obsolete. These parts are suitable only for repair and maintenance of existing systems where component availability is critical.

Compliance Considerations:

For new production designs, IRFBC30PBF or STP4NK60Z are preferred due to Active product status and ROHS3 compliance. The original IRFBC30 is RoHS non-compliant and Obsolete, making it unsuitable for new applications subject to environmental regulations.

Frequently Asked Questions (FAQ)

Q: Can IRFBC30PBF be used as a direct replacement for IRFBC30?

A: Yes. IRFBC30PBF is a direct equivalent manufactured by the same supplier (Vishay Siliconix) with identical electrical specifications. Both devices share the same Vdss (600V), Id (3.6A), Rds On (2.2 Ohm @ 10V), and TO-220-3 package configuration. IRFBC30PBF is Active and ROHS3 compliant, making it the recommended replacement for obsolete IRFBC30 units.

Q: What is the difference between IRFBC30PBF and IRFBC30PBF-BE3?

A: Both parts are direct equivalents with identical electrical parameters. The primary difference is packaging designation. IRFBC30PBF-BE3 is a variant designation that maintains the same electrical specifications and TO-220-3 package. Both are suitable for direct substitution.

Q: Can STP4NK60Z replace IRFBC30 in existing designs?

A: Yes, with design verification. STP4NK60Z maintains the 600V Vdss rating and provides 4A continuous drain current, exceeding the IRFBC30's 3.6A specification. On-resistance is equivalent at 2 Ohm @ 10V. The primary advantage is reduced power dissipation (70W vs. 74W). Gate charge is lower (26 nC vs. 31 nC), which may affect switching speed characteristics. Thermal and EMI performance should be verified in the target application.

Q: Is FQP6N60C suitable for IRFBC30 replacement?

A: FQP6N60C is a functional substitute with enhanced performance. It maintains 600V Vdss and provides significantly higher current capacity (5.5A vs. 3.6A) with improved power dissipation (125W). On-resistance is equivalent at 2 Ohm @ 10V. Input capacitance is higher (810 pF vs. 660 pF), which may affect gate drive requirements. This device is suitable for applications requiring performance headroom beyond the original IRFBC30 specification.

Q: What are the package compatibility requirements?

A: All substitute parts listed maintain Through Hole mounting with TO-220-3 package configuration. Physical pin layout and thermal pad dimensions are compatible with IRFBC30 PCB designs. No board redesign is required for mechanical compatibility.

Q: Why is IRFBC30 classified as Obsolete?

A: The IRFBC30 is no longer in active production by Vishay Siliconix. Obsolete status indicates the manufacturer has discontinued the product line. Direct equivalents such as IRFBC30PBF remain available from the same manufacturer and provide identical electrical performance with improved compliance status.

Q: Can AOT4N60 or FDP5N60NZ be used for new production designs?

A: AOT4N60 is classified as Not For New Designs, and FDP5N60NZ is Obsolete. These parts are suitable only for repair and maintenance of existing systems. For new production, IRFBC30PBF, STP4NK60Z, or FQP6N60C are recommended due to Active product status and availability assurance.

Q: What is the significance of RoHS compliance for IRFBC30 substitution?

A: The original IRFBC30 is RoHS non-compliant. Substitute parts IRFBC30PBF, AOT4N60, FDP5N60NZ, and STP4NK60Z are ROHS3 compliant, meeting environmental regulations for lead-free manufacturing. For applications subject to RoHS requirements, compliant substitutes are mandatory.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) varies among substitutes: IRFBC30 (31 nC), AOT4N60 (18 nC), FDP5N60NZ (13 nC), FQP6N60C (20 nC), and STP4NK60Z (26 nC). Lower gate charge reduces switching losses and improves switching speed. Higher gate charge increases driver power requirements. Gate drive circuits should be verified to ensure adequate current sourcing capability for the selected device.

Q: Are thermal characteristics equivalent across all substitutes?

A: No. Power dissipation ratings vary: IRFBC30 (74W), AOT4N60 (104W), FDP5N60NZ (100W), FQP6N60C (125W), and STP4NK60Z (70W). Higher power dissipation ratings indicate improved thermal performance. Thermal management design should account for the specific device selected. STP4NK60Z offers the lowest power dissipation, while FQP6N60C provides the highest thermal capacity.

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