IRFBC20S N-Channel MOSFET 600V 2.2A Equivalent & Substitute Parts

Part Overview

The IRFBC20S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 2.2A continuous drain current. The device is housed in a TO-263 (D2PAK) surface mount package and is designed for high-voltage switching applications. The IRFBC20S is classified as obsolete, making identification of equivalent and substitute parts essential for ongoing design support, production continuity, and component sourcing.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	2.2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.4	Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	350	pF @ 25V
Power Dissipation (Max)	3.1 (Ta), 50 (Tc)	W
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK (2 Leads + Tab)	—
Moisture Sensitivity Level (MSL)	1	Unlimited

Substitute Part Grouping Explanation

Substitution of the IRFBC20S is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

Drain to Source Voltage (Vdss): Must equal or exceed 600V
Continuous Drain Current (Id): Must equal or exceed 2.2A at 25°C
Gate-Source Voltage (Vgs): Must accommodate ±20V maximum rating
Operating Temperature Range: Must span -55°C to 150°C (TJ)
FET Type and Technology: Must be N-Channel MOSFET (Metal Oxide)

Mechanical Compatibility Criteria:

Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), or equivalent footprint

Substitute parts are grouped into two categories: direct equivalents (identical electrical and mechanical specifications) and functional substitutes (equal or superior electrical performance within the same package family).

Parameter Comparison

Parameter	IRFBC20S (Main)	IRFBC20SPBF (Direct Equivalent)	STB4NK60ZT4 (Functional Substitute)
Manufacturer	Vishay Siliconix	Vishay Siliconix	STMicroelectronics
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V	600V	600V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)	2.2A (Tc)	4A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	4.4Ω @ 1.3A, 10V	4.4Ω @ 1.3A, 10V	2Ω @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V	18nC @ 10V	26nC @ 10V
Vgs (Max)	±20V	±20V	±30V
Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V	350pF @ 25V	510pF @ 25V
Power Dissipation (Max)	3.1W (Ta), 50W (Tc)	3.1W (Ta), 50W (Tc)	70W (Tc)
Operating Temperature	-55°C to 150°C (TJ)	-55°C to 150°C (TJ)	150°C (TJ)
Mounting Type	Surface Mount	Surface Mount	Surface Mount
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	TO-263-3, D2PAK
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFBC20SPBF (Direct Equivalent): The IRFBC20SPBF is a direct electrical and mechanical equivalent to the IRFBC20S. Both devices share identical electrical specifications across all critical parameters: 600V Vdss, 2.2A continuous drain current, 4.4Ω Rds(on), and identical gate charge characteristics. The primary distinction is product status and compliance: IRFBC20SPBF is active and ROHS3 compliant, whereas IRFBC20S is obsolete and RoHS non-compliant. The IRFBC20SPBF is supplied in Tube packaging and maintains full pin and footprint compatibility. This part is the preferred direct replacement for the IRFBC20S in new designs and production continuity scenarios.

STB4NK60ZT4 (Functional Substitute): The STB4NK60ZT4 is a functional substitute manufactured by STMicroelectronics. It meets or exceeds the electrical requirements of the IRFBC20S while offering enhanced performance characteristics. The STB4NK60ZT4 provides double the continuous drain current (4A versus 2.2A), superior on-resistance (2Ω versus 4.4Ω), and higher power dissipation capability (70W Tc versus 50W Tc). The device maintains 600V Vdss rating and TO-263 D2PAK package compatibility. Gate charge is higher (26nC versus 18nC) and input capacitance is increased (510pF versus 350pF), which may affect switching speed in gate-drive-limited applications. The STB4NK60ZT4 is active, ROHS3 compliant, and features SuperMESH™ technology. This part is suitable for applications where improved current handling and thermal performance are beneficial, provided circuit design accommodates the increased capacitive loading.

Both substitute parts are active products with current manufacturing support and regulatory compliance, addressing the obsolescence status of the IRFBC20S.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC20SPBF be used as a direct replacement for the IRFBC20S?

A: Yes. The IRFBC20SPBF is electrically and mechanically identical to the IRFBC20S. Both devices have 600V Vdss, 2.2A continuous drain current, 4.4Ω Rds(on), and identical gate charge. Pin configuration and TO-263 D2PAK footprint are identical. The IRFBC20SPBF is an active product with ROHS3 compliance, making it the direct replacement for obsolete IRFBC20S applications.

Q: What are the key differences between the IRFBC20SPBF and STB4NK60ZT4?

A: Both parts share 600V Vdss rating and TO-263 D2PAK packaging. The STB4NK60ZT4 offers superior performance: 4A continuous drain current (versus 2.2A), lower on-resistance of 2Ω (versus 4.4Ω), and higher power dissipation of 70W (versus 50W). However, the STB4NK60ZT4 has higher gate charge (26nC versus 18nC) and input capacitance (510pF versus 350pF), which may require gate-drive circuit adjustment in applications with limited drive capability.

Q: Is the STB4NK60ZT4 a pin-for-pin replacement for the IRFBC20S?

A: Yes. The STB4NK60ZT4 shares the same TO-263 D2PAK package and pin configuration as the IRFBC20S. No PCB layout modifications are required for mechanical and electrical connection. However, circuit performance may differ due to increased capacitive loading and gate charge, requiring evaluation in the specific application context.

Q: Why is the IRFBC20S listed as obsolete?

A: The IRFBC20S is classified as obsolete by the manufacturer. The IRFBC20SPBF serves as the active replacement, offering identical electrical performance with current manufacturing support and regulatory compliance.

Q: Are both substitute parts RoHS compliant?

A: Yes. Both IRFBC20SPBF and STB4NK60ZT4 are ROHS3 compliant. The original IRFBC20S is RoHS non-compliant. For applications requiring RoHS compliance, either substitute part is suitable.

Q: What is the operating temperature range for each part?

A: IRFBC20S and IRFBC20SPBF both operate from -55°C to 150°C (TJ). The STB4NK60ZT4 is rated to 150°C (TJ) maximum. All three parts support the same upper temperature limit; the IRFBC20S and IRFBC20SPBF provide extended lower temperature operation.

Q: Can the STB4NK60ZT4 be used in applications designed for the IRFBC20S?

A: The STB4NK60ZT4 can be used in applications designed for the IRFBC20S provided the circuit design accommodates increased gate charge (26nC versus 18nC) and input capacitance (510pF versus 350pF). The superior current rating (4A versus 2.2A) and lower on-resistance (2Ω versus 4.4Ω) provide performance margin. Gate-drive circuits with limited current capability may require adjustment to ensure proper switching performance.

Q: What packaging options are available for these parts?

A: IRFBC20SPBF is supplied in Tube packaging. STB4NK60ZT4 is available in Cut Tape (CT) and Digi-Reel® packaging. All three parts use TO-263 (D2PAK) surface mount package with identical footprint and pin configuration.

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