IRFBC20LPBF N-Channel MOSFET 600V 2.2A Equivalent & Substitute Parts

Part Overview

The IRFBC20LPBF is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 600V drain-to-source voltage with 2.2A continuous drain current. The device is packaged in TO-262-3 (I2PAK) configuration and is designed for through-hole mounting applications requiring moderate power dissipation up to 50W at case temperature.

The IRFBC20LPBF is classified as obsolete. Identification of equivalent substitute parts is necessary to maintain design continuity and ensure component availability for new production builds and field replacements where the original part number is no longer readily available through standard distribution channels.

Substiute Parts

IRFBC20LPBF
Vishay SiliconixIn Stock: 1982IRFBC20LPBF Datasheet
IRFBC20LPBF
Current Part
IRFBC20PBF
Vishay SiliconixIn Stock: 3344IRFBC20PBF Datasheet
IRFBC20PBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.2 A (Tc)
Rds On (Max) @ Id, Vgs 4.4 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10V
Vgs (Max) ±20 V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25V
Power Dissipation (Max) 50 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package / Case TO-262-3
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRFBC20LPBF is determined by electrical parameter equivalence across the following critical specifications:

Electrical Equivalence Criteria:

  • Drain to Source Voltage (Vdss): 600V
  • Continuous Drain Current (Id): 2.2A at 25°C
  • On-State Resistance (Rds On): 4.4 Ohm @ 1.3A, 10V
  • Gate Threshold Voltage (Vgs(th)): 4V @ 250µA
  • Gate Charge (Qg): 18 nC @ 10V
  • Input Capacitance (Ciss): 350 pF @ 25V
  • Maximum Gate Voltage (Vgs): ±20V
  • Operating Temperature Range: -55°C to 150°C

Mechanical Compatibility Criteria:

  • Mounting Type: Through Hole
  • Technology: MOSFET (Metal Oxide)
  • N-Channel configuration

The IRFBC20PBF qualifies as a direct electrical equivalent. Both parts share identical electrical specifications and are derived from the same base product number (IRFBC20). The primary distinction is packaging format: the IRFBC20LPBF uses TO-262-3 (I2PAK) configuration, while the IRFBC20PBF uses TO-220AB configuration. Both are through-hole mounted devices with equivalent thermal and electrical performance.

Parameter Comparison

Parameter IRFBC20LPBF (Main Part) IRFBC20PBF (Substitute) Match Status
FET Type N-Channel N-Channel Identical
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) Identical
Drain to Source Voltage (Vdss) 600 V 600 V Identical
Current - Continuous Drain (Id) @ 25°C 2.2 A (Tc) 2.2 A (Tc) Identical
Drive Voltage (Max Rds On) 10 V 10 V Identical
Rds On (Max) @ Id, Vgs 4.4 Ohm @ 1.3A, 10V 4.4 Ohm @ 1.3A, 10V Identical
Vgs(th) (Max) @ Id 4 V @ 250µA 4 V @ 250µA Identical
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10V 18 nC @ 10V Identical
Vgs (Max) ±20 V ±20 V Identical
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 25V 350 pF @ 25V Identical
Power Dissipation (Max) 50 W (Tc) 50 W (Tc) Identical
Operating Temperature Range -55°C to 150°C (TJ) -55°C to 150°C (TJ) Identical
Mounting Type Through Hole Through Hole Identical
Supplier Device Package TO-262-3 TO-220AB Different
Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-220-3 Different
Product Status Obsolete Active Different
RoHS Status ROHS3 Compliant ROHS3 Compliant Identical
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) Identical
REACH Status REACH Unaffected REACH Affected Different

Engineering Selection Recommendations

The IRFBC20PBF is the direct electrical equivalent to the IRFBC20LPBF and is suitable for substitution where electrical performance and thermal characteristics are the primary design requirements.

Compliance Status: Both parts maintain ROHS3 compliance and MSL Level 1 (Unlimited) moisture sensitivity rating, ensuring compatibility with standard manufacturing and storage protocols. The IRFBC20PBF carries Active product status, providing assured long-term availability compared to the Obsolete status of the IRFBC20LPBF.

Regulatory Considerations: The IRFBC20LPBF is REACH Unaffected, while the IRFBC20PBF is REACH Affected. Applications subject to REACH compliance requirements must account for this distinction during component selection and supply chain documentation.

Package Transition: Selection between these parts is primarily determined by printed circuit board layout and mechanical mounting requirements. The TO-262-3 (I2PAK) package of the IRFBC20LPBF provides a compact footprint suitable for space-constrained applications. The TO-220AB package of the IRFBC20PBF offers a larger form factor with enhanced thermal coupling to heatsinks through the mounting tab. Both packages accommodate the identical electrical specifications and power dissipation ratings.

Frequently Asked Questions (FAQ)

Q: Can the IRFBC20PBF directly replace the IRFBC20LPBF in an existing circuit?

A: Yes, from an electrical standpoint. Both parts share identical electrical specifications including Vdss, Id, Rds On, gate charge, and operating temperature range. The primary consideration is mechanical compatibility. The IRFBC20PBF uses a TO-220AB package while the IRFBC20LPBF uses TO-262-3 (I2PAK) packaging. PCB footprints and mounting hardware must be verified for compatibility before substitution.

Q: What is the difference between TO-262-3 and TO-220AB packages?

A: Both are through-hole mounted packages for power semiconductors. The TO-262-3 (I2PAK) is a compact package with three leads and a smaller footprint. The TO-220AB is a larger package with three leads and a larger mounting tab designed for direct heatsink attachment. Both packages support identical power dissipation ratings (50W at case temperature) when properly mounted.

Q: Are there thermal performance differences between these packages?

A: Both packages are rated for 50W maximum power dissipation at case temperature (Tc). Thermal performance depends on mounting configuration and heatsink design. The TO-220AB package provides a larger surface area and mounting tab for heatsink coupling, which may offer practical advantages in thermal management applications. The TO-262-3 package is suitable for applications where space constraints are critical.

Q: What is the significance of the different REACH statuses?

A: The IRFBC20LPBF is REACH Unaffected, while the IRFBC20PBF is REACH Affected. For applications subject to REACH compliance requirements, this distinction must be documented in supply chain records and compliance certifications. Both parts are ROHS3 compliant.

Q: Is the IRFBC20PBF available in higher quantities than the IRFBC20LPBF?

A: The IRFBC20PBF carries Active product status with 3313 pieces in stock, compared to the Obsolete IRFBC20LPBF with 1953 pieces in stock. The Active status of the IRFBC20PBF provides assurance of continued availability and supply chain stability for future production requirements.

Q: Are gate drive requirements identical between these parts?

A: Yes. Both parts share identical gate threshold voltage (Vgs(th) = 4V @ 250µA), maximum gate voltage (±20V), and gate charge specifications (18 nC @ 10V). Gate drive circuits designed for the IRFBC20LPBF operate identically with the IRFBC20PBF.

Q: Can these parts be used interchangeably in high-frequency switching applications?

A: Yes, from an electrical specification standpoint. Both parts have identical gate charge (18 nC @ 10V) and input capacitance (350 pF @ 25V), which determine switching speed and drive requirements. PCB layout and thermal management must be verified for the specific package selected.

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