IRFBC20 N-Channel MOSFET 600V 2.2A Equivalent & Substitute Parts

Part Overview

The IRFBC20 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 600V drain-to-source voltage with a continuous drain current of 2.2A at 25°C. The device is packaged in a TO-220AB through-hole configuration and dissipates a maximum of 50W. The IRFBC20 is classified as obsolete, making identification of active equivalent and substitute parts essential for ongoing design support, production continuity, and component procurement.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	600	V
Current - Continuous Drain (Id) @ 25°C	2.2	A (Tc)
Drive Voltage (Max Rds On)	10	V
Rds On (Max) @ Id, Vgs	4.4	Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18	nC @ 10V
Vgs (Max)	±20	V
Input Capacitance (Ciss) (Max) @ Vds	350	pF @ 25V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
Supplier Device Package	TO-220AB	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	—

Substitute Part Grouping Explanation

Substitution of the IRFBC20 is determined by electrical and mechanical parameter equivalence across the following criteria:

Electrical Parameters (Must Match):

Drain to Source Voltage (Vdss): 600V
Continuous Drain Current (Id) @ 25°C: 2.2A (Tc)
On-State Drain Resistance (Rds On) @ Id, Vgs: 4.4 Ohm @ 1.3A, 10V
Gate Threshold Voltage (Vgs(th)) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 18 nC @ 10V
Maximum Gate Voltage (Vgs): ±20V
Input Capacitance (Ciss) @ Vds: 350 pF @ 25V
Power Dissipation (Max): 50W (Tc)
Operating Temperature Range: -55°C to 150°C (TJ)

Mechanical Parameters (Must Match):

Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB

The substitute parts IRFBC20PBF and IRFBC20PBF-BE3 satisfy all electrical and mechanical parameter requirements for direct substitution with the obsolete IRFBC20.

Parameter Comparison

Parameter	IRFBC20	IRFBC20PBF	IRFBC20PBF-BE3
Manufacturer	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
FET Type	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V	600V	600V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)	2.2A (Tc)	2.2A (Tc)
Drive Voltage (Max Rds On)	10V	10V	10V
Rds On (Max) @ Id, Vgs	4.4 Ohm @ 1.3A, 10V	4.4 Ohm @ 1.3A, 10V	4.4 Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA	4V @ 250µA	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	18 nC @ 10V	18 nC @ 10V	18 nC @ 10V
Vgs (Max)	±20V	±20V	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25V	350 pF @ 25V	350 pF @ 25V
Power Dissipation (Max)	50W (Tc)	50W (Tc)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole	Through Hole	Through Hole
Package / Case	TO-220-3	TO-220-3	TO-220-3
Supplier Device Package	TO-220AB	TO-220AB	TO-220AB
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	1 (Unlimited)
Product Status	Obsolete	Active	Active
RoHS Status	RoHS non-compliant	ROHS3 Compliant	ROHS3 Compliant
REACH Status	REACH Unaffected	REACH Affected	Vendor Undefined

Engineering Selection Recommendations

IRFBC20PBF is the primary direct substitute for the obsolete IRFBC20. This part maintains identical electrical and mechanical specifications while offering active product status from Vishay Siliconix. The IRFBC20PBF is ROHS3 compliant and REACH affected, meeting current regulatory requirements for new designs and production environments. Packaging is supplied in tube format.

IRFBC20PBF-BE3 is an alternative direct substitute with identical electrical and mechanical specifications. This variant is also ROHS3 compliant and carries active product status. REACH status is vendor undefined. Packaging is supplied in tube format.

Both substitute parts are electrically and mechanically interchangeable with the IRFBC20 across all specified parameters. Selection between IRFBC20PBF and IRFBC20PBF-BE3 depends on supply chain availability, packaging requirements, and REACH compliance documentation needs for the end application.

Frequently Asked Questions (FAQ)

Q: Can IRFBC20PBF directly replace IRFBC20 in existing designs?

A: Yes. The IRFBC20PBF is electrically and mechanically equivalent to the IRFBC20 across all specified parameters, including Vdss (600V), Id (2.2A), Rds On (4.4 Ohm), gate charge (18 nC), and operating temperature range (-55°C to 150°C). The TO-220AB package and through-hole mounting are identical.

Q: What is the difference between IRFBC20PBF and IRFBC20PBF-BE3?

A: Both parts are electrically and mechanically identical to the IRFBC20 specification. The primary difference is REACH compliance status: IRFBC20PBF is REACH affected, while IRFBC20PBF-BE3 is vendor undefined. Both are ROHS3 compliant and active products.

Q: Why is the IRFBC20 obsolete?

A: The IRFBC20 is classified as obsolete by the manufacturer. Active equivalent parts IRFBC20PBF and IRFBC20PBF-BE3 are available as direct replacements for new procurement and production.

Q: Are there packaging differences between the substitute parts?

A: The IRFBC20 was available in standard packaging. Both IRFBC20PBF and IRFBC20PBF-BE3 are supplied in tube packaging. All three parts use the TO-220AB through-hole package format.

Q: Do the substitute parts meet current regulatory compliance?

A: Yes. Both IRFBC20PBF and IRFBC20PBF-BE3 are ROHS3 compliant. The original IRFBC20 is RoHS non-compliant. For applications requiring RoHS compliance, either substitute part is suitable.

Q: What is the moisture sensitivity level for these parts?

A: All three parts—IRFBC20, IRFBC20PBF, and IRFBC20PBF-BE3—carry MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage or handling.

Q: Can I use IRFBC20PBF-BE3 if IRFBC20PBF is unavailable?

A: Yes. IRFBC20PBF-BE3 is a direct electrical and mechanical equivalent. Selection between the two depends on supply availability and REACH compliance documentation requirements for your application.

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