IRFB7787PBF N-Channel MOSFET 75V 76A Equivalent & Substitute Parts

Part Overview

The IRFB7787PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 76A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making identification of functionally equivalent substitute parts essential for design continuity and procurement planning.

The IRFB7787PBF belongs to the HEXFET® and StrongIRFET™ series and is ROHS3 compliant with unlimited moisture sensitivity level (MSL 1). Due to its obsolete status, equivalent alternatives from active product lines are necessary to maintain supply chain reliability and support ongoing production requirements.

Substiute Parts

IRFB7787PBF

Infineon TechnologiesIn Stock: 2120IRFB7787PBF Datasheet

Current PartRFQ

AOT430

Alpha & Omega Semiconductor Inc.In Stock: 10374AOT430 Datasheet

MFR RecommendedRFQ

AOT470

Alpha & Omega Semiconductor Inc.In Stock: 15162AOT470 Datasheet

MFR RecommendedRFQ

FDP75N08A

onsemiIn Stock: 15553FDP75N08A Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRFB7787PBF is determined by strict alignment of the following electrical and mechanical parameters:

Primary Substitution Criteria:

• Drain to Source Voltage (Vdss): Must equal 75V
• Continuous Drain Current (Id): Must be ≥76A at 25°C
• Package Type: Must be Through Hole TO-220 or TO-220-3
• FET Type: Must be N-Channel MOSFET
• Operating Temperature Range: Must support -55°C to 175°C minimum
• RoHS Compliance: Must be ROHS3 compliant

Secondary Compatibility Parameters:

• Gate Threshold Voltage (Vgs(th)): Acceptable range 3.7V to 4V @ specified test current
• Gate Charge (Qg): Acceptable range 104 nC to 136 nC @ 10V
• Input Capacitance (Ciss): Acceptable range 4020 pF to 5640 pF @ specified voltage
• Rds On (Max): Lower values indicate improved performance; acceptable up to 11.5 mOhm

All three substitute parts (AOT430, AOT470, FDP75N08A) meet the primary substitution criteria and fall within acceptable ranges for secondary parameters.

Parameter Comparison

Engineering Selection Recommendations

AOT430 (Alpha & Omega Semiconductor Inc.)

The AOT430 is an Active product with 80A continuous drain current, exceeding the IRFB7787PBF requirement of 76A. This device provides improved thermal performance with 268W maximum power dissipation versus 125W for the original part. The AOT430 maintains 75V Vdss rating and TO-220 package compatibility. ROHS3 compliance and unlimited MSL rating ensure regulatory and environmental compatibility. Higher gate charge (114 nC) and input capacitance (4700 pF) are within acceptable substitution ranges.

AOT470 (Alpha & Omega Semiconductor Inc.)

The AOT470 is an Active product rated for 100A continuous drain current at Tc, providing the highest current capability among substitute options. This device delivers 268W maximum power dissipation and maintains 75V Vdss specification. The AOT470 features the highest input capacitance (5640 pF) and gate charge (136 nC) within the substitute group, which remains within acceptable engineering tolerances. ROHS3 compliance and unlimited MSL rating confirm regulatory alignment.

FDP75N08A (onsemi)

The FDP75N08A is classified as Obsolete but remains available with 15,465 pieces in stock. This device provides 75A continuous drain current, closely matching the original 76A specification. The FDP75N08A offers the lowest gate charge (104 nC) among substitutes, potentially reducing switching losses. Operating temperature range extends to 150°C maximum (versus 175°C for other options), which represents a minor limitation. ROHS3 compliance is confirmed.

Recommendation Basis:

For new designs and ongoing production requiring active product status, AOT430 or AOT470 are preferred. Both devices are manufactured by Alpha & Omega Semiconductor Inc. and carry Active product status with confirmed long-term availability. AOT430 provides a balanced performance profile with 80A current rating. AOT470 offers maximum current capability for applications requiring thermal margin.

For applications where existing inventory must be maintained or where the FDP75N08A is already qualified, this onsemi device remains functionally compatible despite Obsolete classification.

Frequently Asked Questions (FAQ)

Q: Can the AOT430 directly replace the IRFB7787PBF in existing circuit designs?

A: Yes. The AOT430 meets all primary substitution criteria: 75V Vdss, 80A continuous drain current (exceeding 76A requirement), Through Hole TO-220 package, N-Channel MOSFET technology, and -55°C to 175°C operating range. ROHS3 compliance matches the original specification. Pin configuration is identical in TO-220 packages. No circuit modifications are required.

Q: What is the difference between AOT430 and AOT470?

A: Both devices are manufactured by Alpha & Omega Semiconductor Inc. and share 75V Vdss rating. The primary difference is continuous drain current: AOT430 is rated 80A while AOT470 is rated 100A. AOT470 provides higher current capacity and identical 268W power dissipation. Gate charge and input capacitance are slightly higher in AOT470 (136 nC and 5640 pF respectively). Selection depends on application current requirements and thermal design margins.

Q: Why is the FDP75N08A listed as Obsolete if it is a suitable substitute?

A: The FDP75N08A meets all electrical and mechanical substitution criteria and remains available with substantial inventory (15,465 pieces). Obsolete classification indicates the manufacturer (onsemi) has discontinued active production and support. For applications already using this device or where existing stock is available, it remains functionally compatible. However, for new designs, Active products (AOT430, AOT470) are recommended to ensure long-term supply chain stability.

Q: Are there package compatibility concerns between TO-220 and TO-220-3?

A: No. TO-220 and TO-220-3 are functionally equivalent package designations for three-terminal Through Hole devices. Both feature identical pin spacing (2.54 mm), lead configuration, and mounting footprint. The "-3" designation in TO-220-3 explicitly indicates three terminals (Gate, Drain, Source), while TO-220 is the generic package family designation. All substitute parts are mechanically and electrically compatible with existing TO-220 PCB layouts.

Q: What is the significance of the higher power dissipation ratings in AOT430 and AOT470?

A: AOT430 and AOT470 are rated for 268W maximum power dissipation compared to 125W for the IRFB7787PBF. This indicates improved thermal performance and die design in the substitute devices. Higher power dissipation capability provides additional thermal margin in applications operating near maximum current or with elevated ambient temperatures. This is a performance advantage and does not create compatibility issues.

Q: How do gate charge differences affect circuit performance?

A: Gate charge (Qg) determines the energy required to switch the MOSFET on and off. The IRFB7787PBF specifies 109 nC @ 10V. Substitutes range from 104 nC (FDP75N08A) to 136 nC (AOT470). Lower gate charge reduces switching losses and allows faster switching speeds. Higher gate charge increases switching energy but remains within acceptable engineering tolerances for most applications. Gate driver circuits must supply sufficient current to charge the gate within required switching time; verify gate driver specifications for compatibility.

Q: What does ROHS3 compliance mean for this product category?

A: ROHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive 2011/65/EU as amended by Directive (EU) 2015/863. This certification confirms the MOSFET does not contain lead, mercury, cadmium, hexavalent chromium, polybrominated biphenyls, or polybrominated diphenyl ethers above specified thresholds. All listed substitute parts carry ROHS3 compliance, ensuring regulatory alignment for applications in regulated markets.

Q: Is thermal management different between the original and substitute parts?

A: Thermal management depends on PCB layout, heatsink design, and application current profile rather than device selection alone. All substitute parts feature identical Through Hole TO-220 package geometry and thermal interface characteristics. The higher power dissipation ratings in AOT430 and AOT470 indicate improved die thermal performance, which may reduce junction temperature under identical thermal management conditions. Verify thermal design calculations using the specific Rds On and power dissipation values for each device.