Request Quote
(Ships tomorrow)
IRFB7430GPBF N-Channel MOSFET Equivalent & Substitute Parts
Part Overview
The IRFB7430GPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 195A continuous drain current in a Through Hole TO-220AB package. This device is part of the HEXFET® series and is classified as Obsolete product status.
Due to its obsolete classification, locating original stock may present supply chain challenges. Identifying equivalent and substitute parts ensures design continuity and project timeline adherence. The substitute part listed maintains electrical and mechanical compatibility while offering improved availability and active product status.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 195 | A (Tc) |
| RDS(on) Max @ 100A, 10V | 1.3 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3.9 | V |
| Gate Charge (Qg) @ 10V | 460 | nC |
| Input Capacitance (Ciss) @ 25V | 14240 | pF |
| Maximum Gate Voltage (Vgs) | ±20 | V |
| Package Type | TO-220AB | Through Hole |
| Mounting Type | Through Hole | - |
| Moisture Sensitivity Level (MSL) | 1 | Unlimited |
Substitute Part Grouping Explanation
Substitution of the IRFB7430GPBF is determined by strict equivalence across the following electrical and mechanical parameters:
Electrical Equivalence Criteria:
- Drain to Source Voltage (Vdss): 40V
- Continuous Drain Current (Id) @ 25°C: 195A (Tc)
- RDS(on) Max @ 100A, 10V: 1.3 mOhm
- Gate Threshold Voltage (Vgs(th)) @ 250µA: 3.9V
- Gate Charge (Qg) @ 10V: 460 nC
- Input Capacitance (Ciss) @ 25V: 14240 pF
- Maximum Gate Voltage (Vgs): ±20V
Mechanical Equivalence Criteria:
- Package Type: TO-220AB
- Mounting Type: Through Hole
- Moisture Sensitivity Level (MSL): 1 (Unlimited)
The substitute part IRFB7430PBF meets all electrical and mechanical parameters specified above, ensuring direct functional replacement in existing circuit designs.
Parameter Comparison
| Parameter | IRFB7430GPBF | IRFB7430PBF | Unit |
|---|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies | - |
| FET Type | N-Channel | N-Channel | - |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Drain to Source Voltage (Vdss) | 40 | 40 | V |
| Continuous Drain Current (Id) @ 25°C | 195 | 195 | A (Tc) |
| RDS(on) Max @ 100A, 10V | 1.3 | 1.3 | mOhm |
| Gate Threshold Voltage (Vgs(th)) @ 250µA | 3.9 | 3.9 | V |
| Gate Charge (Qg) @ 10V | 460 | 460 | nC |
| Input Capacitance (Ciss) @ 25V | 14240 | 14240 | pF |
| Maximum Gate Voltage (Vgs) | ±20 | ±20 | V |
| Series | HEXFET® | HEXFET®, StrongIRFET™ | - |
| Package Type | TO-220AB | TO-220AB | - |
| Mounting Type | Through Hole | Through Hole | - |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | 1 (Unlimited) | - |
| REACH Status | REACH Unaffected | REACH Unaffected | - |
| ECCN | EAR99 | EAR99 | - |
| HTSUS Code | 8541.29.0095 | 8541.29.0095 | - |
| Product Status | Obsolete | Active | - |
| Power Dissipation (Max) | Not Specified | 375W (Tc) | W |
| Operating Temperature | Not Specified | -55°C ~ 175°C (TJ) | °C |
| RoHS Status | Not Specified | ROHS3 Compliant | - |
Engineering Selection Recommendations
Primary Selection: IRFB7430PBF
The IRFB7430PBF is the direct substitute for the IRFB7430GPBF. Both parts share identical electrical parameters across all specified ratings and mechanical compatibility in the TO-220AB Through Hole package.
Justification for Substitution:
-
Product Status: The IRFB7430GPBF is classified as Obsolete, while IRFB7430PBF maintains Active product status. This ensures long-term supply chain availability and continued manufacturer support.
-
Compliance and Certifications: Both parts carry identical REACH Status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095), ensuring regulatory equivalence.
-
Electrical Equivalence: All critical electrical parameters are identical, including Vdss, Id, RDS(on), Vgs(th), Qg, Ciss, and Vgs(max). Direct functional replacement is assured.
-
Mechanical Compatibility: Both devices utilize the TO-220AB Through Hole package with identical MSL rating (1, Unlimited), ensuring PCB layout and thermal management compatibility.
-
Enhanced Documentation: The IRFB7430PBF provides additional specified parameters (Power Dissipation: 375W, Operating Temperature: -55°C ~ 175°C, RoHS3 Compliance) not listed for the obsolete variant, supporting design verification and compliance documentation.
Frequently Asked Questions (FAQ)
Q1: Can IRFB7430PBF be used as a direct replacement for IRFB7430GPBF in existing designs?
A: Yes. The IRFB7430PBF is electrically and mechanically equivalent to the IRFB7430GPBF across all specified parameters. No circuit modifications are required. Both devices are N-Channel MOSFETs with identical Vdss (40V), Id (195A), RDS(on) (1.3 mOhm @ 100A, 10V), and package configuration (TO-220AB Through Hole).
Q2: What is the primary advantage of selecting IRFB7430PBF over IRFB7430GPBF?
A: The IRFB7430PBF carries Active product status, ensuring reliable long-term availability and manufacturer support. The IRFB7430GPBF is Obsolete, which may result in supply constraints and limited technical support.
Q3: Are there any differences in thermal or power handling characteristics between these parts?
A: The IRFB7430PBF specifies a maximum power dissipation of 375W (Tc) and operating temperature range of -55°C ~ 175°C (TJ). These parameters are not specified for the IRFB7430GPBF in the provided data. Both devices share identical RDS(on) characteristics, which directly influence power dissipation in switching applications.
Q4: Do both parts meet the same regulatory and compliance standards?
A: Yes. Both IRFB7430GPBF and IRFB7430PBF share identical REACH Status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095). The IRFB7430PBF additionally specifies RoHS3 Compliance.
Q5: Is the TO-220AB package identical for both parts?
A: Yes. Both devices utilize the TO-220AB Through Hole package with identical MSL rating (1, Unlimited). PCB footprints, lead spacing, and thermal interface requirements are identical.
Q6: What is the difference between HEXFET® and StrongIRFET™ series designations?
A: The IRFB7430GPBF is designated as HEXFET® series. The IRFB7430PBF carries both HEXFET® and StrongIRFET™ series designations. Both designations refer to Infineon's N-Channel MOSFET technology platforms. The electrical and mechanical specifications remain identical.
Q7: Are there any packaging format differences between these parts?
A: The IRFB7430GPBF packaging format is not specified in the provided data. The IRFB7430PBF is supplied in Tube packaging. Both parts are Through Hole mounted in TO-220AB configuration. Verify packaging requirements for your procurement and assembly processes.
Alternative Parts
SJ6012L2TP
Littelfuse Inc.
6 Alternative Parts
JMK107BBJ476MA-RE
Taiyo Yuden
10 Alternative Parts
GMK107BBJ475MA-T
Taiyo Yuden
5 Alternative Parts
SJ6020N2ARP
Littelfuse Inc.
3 Alternative Parts
SJ6025R2ATP
Littelfuse Inc.
4 Alternative Parts
2474-05L
API Delevan Inc.
1 Alternative Parts
4590R-684K
API Delevan Inc.
1 Alternative Parts
CM6560R-334
API Delevan Inc.
1 Alternative Parts
CM6460-104
API Delevan Inc.
1 Alternative Parts
5526-12
API Delevan Inc.
1 Alternative Parts
