IRFB4710PBF N-Channel 100V 75A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFB4710PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 75A continuous drain current in the TO-220AB package. This device is part of the HEXFET® series and is classified as Obsolete. Due to its obsolete status, equivalent and substitute parts from active product lines are necessary for new designs and ongoing production requirements. Substitute parts must maintain electrical compatibility within the specified parameter ranges while meeting current manufacturing and compliance standards.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-State Resistance (Rds On) @ 45A, 10V	14	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5.5	V
Gate Charge (Qg) @ 10V	170	nC
Power Dissipation (Max)	200	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFB4710PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 75A minimum at Tc
Package Type: TO-220-3 (Through Hole)
Gate Drive Voltage: 10V compatible
Operating Temperature Range: -55°C to 175°C minimum
RoHS3 Compliance and REACH Unaffected status

Substitution Logic: Parts are grouped into two categories based on voltage rating:

100V Rated Substitutes (Direct voltage equivalents): IRFB4410ZPBF, IRFB4610PBF, CSD19534KCS, HUF75645P3, IXTP80N10T
Higher Voltage Rated Substitutes (120V rated, backward compatible): IPP114N12N3GXKSA1
Lower Voltage Rated Substitutes (55V and 80V rated, application-dependent): HUF75344P3, HUF75345P3, HUF75545P3

All substitute parts maintain N-Channel MOSFET technology, through-hole mounting, and compatible gate drive requirements. Substitutes with higher voltage ratings provide additional design margin. Substitutes with lower voltage ratings are suitable only for applications where the 100V rating is not required.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Power Diss. (W)	Status	Package
IRFB4710PBF	Infineon	100	75	14 @ 45A	170 @ 10V	200 (Tc)	Obsolete	TO-220-3
IPP114N12N3GXKSA1	Infineon	120	75	11.4 @ 75A	65 @ 10V	136 (Tc)	Active	TO-220-3
IRFB4410ZPBF	Infineon	100	97	9 @ 58A	120 @ 10V	230 (Tc)	Active	TO-220-3
IRFB4610PBF	Infineon	100	73	14 @ 44A	140 @ 10V	190 (Tc)	Not For New Designs	TO-220-3
CSD19534KCS	Texas Instruments	100	100	16.5 @ 30A	22.2 @ 10V	118 (Tc)	Active	TO-220-3
FDP3652	onsemi	100	61	16 @ 61A	53 @ 10V	150 (Tc)	Not For New Designs	TO-220-3
HUF75344P3	onsemi	55	75	8 @ 75A	210 @ 20V	285 (Tc)	Active	TO-220-3
HUF75345P3	onsemi	55	75	7 @ 75A	275 @ 20V	325 (Tc)	Active	TO-220-3
HUF75545P3	Fairchild Semiconductor	80	75	10 @ 75A	235 @ 20V	270 (Tc)	Active	TO-220-3
HUF75645P3	onsemi	100	75	14 @ 75A	238 @ 20V	310 (Tc)	Active	TO-220-3
IXTP80N10T	IXYS	100	80	14 @ 25A	60 @ 10V	230 (Tc)	Active	TO-220-3

Engineering Selection Recommendations

For Direct 100V Replacement (Recommended for New Designs):

IRFB4410ZPBF is the primary recommended substitute. It maintains 100V Vdss rating, exceeds the 75A current requirement at 97A, and is classified as Active. This part offers improved on-state resistance (9 mOhm vs. 14 mOhm) and higher power dissipation capability (230W vs. 200W). ROHS3 compliance and REACH Unaffected status are maintained.

For Enhanced Performance with Voltage Margin:

IPP114N12N3GXKSA1 (Infineon OptiMOS™ series, Active status) provides 120V Vdss rating, delivering additional design margin for voltage transients. It delivers superior on-state resistance (11.4 mOhm) and lower gate charge (65 nC), reducing switching losses. Power dissipation is 136W, suitable for applications with moderate thermal requirements.

For Equivalent Voltage and Current Matching:

HUF75645P3 (onsemi UltraFET™ series, Active status) matches the 100V/75A specification exactly. It provides higher power dissipation capability (310W) and is suitable for high-thermal-load applications. ROHS3 compliance is confirmed.

For Lower Voltage Applications (55V or 80V Systems):

HUF75344P3, HUF75345P3, or HUF75545P3 are suitable only when the application voltage does not exceed 55V or 80V respectively. These parts offer superior on-state resistance and power dissipation but are not backward compatible with 100V-rated designs.

Parts to Avoid for New Designs:

IRFB4610PBF and FDP3652 are classified as "Not For New Designs" and should not be selected for new product development, despite electrical compatibility.

Frequently Asked Questions (FAQ)

Q: Can IRFB4410ZPBF directly replace IRFB4710PBF in existing designs?

A: Yes. IRFB4410ZPBF maintains the same 100V Vdss rating, exceeds the 75A current requirement, uses identical TO-220-3 packaging, and operates across the same temperature range (-55°C to 175°C). Gate drive voltage compatibility (10V) is confirmed. No circuit modifications are required.

Q: What is the advantage of selecting IPP114N12N3GXKSA1 over IRFB4410ZPBF?

A: IPP114N12N3GXKSA1 provides 120V Vdss rating instead of 100V, offering 20V additional voltage margin for transient protection. It features lower on-state resistance (11.4 mOhm vs. 9 mOhm at rated current) and significantly lower gate charge (65 nC vs. 120 nC), reducing switching losses and improving efficiency. Both are Active status parts with full compliance certifications.

Q: Are HUF75344P3 and HUF75345P3 suitable replacements for the IRFB4710PBF?

A: These parts are not suitable for direct replacement. Both are rated for 55V Vdss maximum, which is 45V below the IRFB4710PBF specification. They are suitable only for applications where the circuit voltage does not exceed 55V. Using them in 100V circuits will result in device failure.

Q: What is the difference between HUF75344P3 and HUF75345P3?

A: Both parts are rated 55V/75A in TO-220-3 packaging. HUF75345P3 offers lower on-state resistance (7 mOhm vs. 8 mOhm) and higher power dissipation capability (325W vs. 285W). HUF75345P3 is the higher-performance variant.

Q: Can CSD19534KCS be used as a substitute?

A: CSD19534KCS (Texas Instruments, 100V/100A, Active status) is electrically compatible and exceeds current requirements. However, it features higher on-state resistance (16.5 mOhm vs. 14 mOhm) and significantly lower power dissipation (118W vs. 200W). It is suitable only for low-power applications or where thermal management is not critical.

Q: Why is IRFB4610PBF listed but not recommended?

A: IRFB4610PBF is classified as "Not For New Designs" by the manufacturer. Although it is electrically compatible (100V/73A), its obsolescence status makes it unsuitable for new product development. Existing inventory may be used for legacy product support only.

Q: Are all substitute parts RoHS3 compliant?

A: All recommended Active status parts (IRFB4410ZPBF, IPP114N12N3GXKSA1, HUF75344P3, HUF75345P3, HUF75645P3, IXTP80N10T, CSD19534KCS) are confirmed RoHS3 compliant and REACH Unaffected. Parts classified as "Not For New Designs" maintain compliance but should not be selected for new designs.

Q: What is the significance of gate charge (Qg) differences between parts?

A: Gate charge directly affects switching speed and power loss during transitions. Lower gate charge (e.g., IPP114N12N3GXKSA1 at 65 nC) enables faster switching and reduced switching losses compared to higher gate charge parts (e.g., IRFB4710PBF at 170 nC). This is particularly important in high-frequency switching applications.

Q: Can IXTP80N10T be used as a substitute?

A: Yes. IXTP80N10T (IXYS, 100V/80A, Active status) is electrically compatible and exceeds current requirements. It maintains 100V Vdss rating and TO-220-3 packaging. On-state resistance is 14 mOhm (matching the original), and power dissipation is 230W. It is suitable for direct replacement.

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