IRFB4510GPBF N-Channel 100V 62A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFB4510GPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 62A continuous drain current at 25°C. This device features the HEXFET® series technology in a Through Hole TO-220AB package and is designed for high-current switching applications requiring 140W power dissipation capability.

The IRFB4510GPBF is classified as Obsolete. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this component.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	62	A (Tc)
On-State Resistance (Rds On Max) @ 37A, 10V	13.5	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 100µA	4	V
Gate Charge (Qg Max) @ 10V	87	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitute parts for the IRFB4510GPBF are selected based on strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The substitution logic is based on the following critical parameters:

Primary Compatibility Criteria:

Drain to Source Voltage (Vdss): 100V minimum
Package Type: TO-220 series (Through Hole)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C (TJ)
Gate Voltage (Vgs Max): ±20V

Secondary Compatibility Criteria:

Continuous Drain Current (Id): Equal to or greater than 62A
On-State Resistance (Rds On): Comparable electrical performance
Gate Charge (Qg): Switching characteristics
Power Dissipation: Thermal management capability

Substitute parts are grouped into two categories based on current rating alignment:

Category A - Direct Current Rating Match (62A): Parts with drain current specifications at or near 62A, providing equivalent current-handling capacity.

Category B - Enhanced Current Rating (>62A): Parts with drain current specifications exceeding 62A, offering increased current capacity while maintaining voltage and package compatibility.

Parameter Comparison

Parameter	IRFB4510GPBF	IRFB4510PBF	CSD19534KCS	STP45N10F7	STP80NF10
Manufacturer	Infineon	Infineon	Texas Instruments	STMicroelectronics	STMicroelectronics
Vdss (V)	100	100	100	100	100
Id @ 25°C (A)	62 (Tc)	62 (Tc)	100 (Ta)	45 (Tc)	80 (Tc)
Rds On Max @ 10V (mOhm)	13.5 @ 37A	13.5 @ 37A	16.5 @ 30A	18 @ 22.5A	15 @ 40A
Vgs(th) Max (V)	4 @ 100µA	4 @ 100µA	3.4 @ 250µA	4.5 @ 250µA	4 @ 250µA
Qg Max @ 10V (nC)	87	87	22.2	25	182
Power Dissipation Max (W)	140 (Tc)	140 (Tc)	118 (Tc)	60 (Tc)	300 (Tc)
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220AB	TO-220AB	TO-220-3	TO-220	TO-220
Product Status	Obsolete	Active	Active	Active	Active
RoHS Status	Not Specified	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

IRFB4510PBF (Infineon Technologies)

The IRFB4510PBF is the primary recommended substitute for the IRFB4510GPBF. This part maintains identical electrical specifications including 100V Vdss, 62A continuous drain current, 13.5mOhm Rds On, and 140W power dissipation. The IRFB4510PBF differs only in packaging format (Tube versus unspecified for the original) and product status (Active versus Obsolete). Both parts share the HEXFET® series designation and TO-220AB package configuration. The IRFB4510PBF is ROHS3 Compliant and carries Active product status, ensuring long-term availability and supply chain support.

CSD19534KCS (Texas Instruments)

The CSD19534KCS is a compatible substitute offering enhanced current capacity at 100A continuous drain current, compared to the 62A rating of the IRFB4510GPBF. Both devices maintain 100V Vdss and operate across the identical temperature range (-55°C to 175°C). The CSD19534KCS features lower gate charge (22.2nC versus 87nC) and reduced input capacitance (1670pF versus 3180pF), resulting in faster switching characteristics. Power dissipation is rated at 118W (Tc), which is lower than the original 140W specification. The CSD19534KCS is ROHS3 Compliant with Active product status.

STP80NF10 (STMicroelectronics)

The STP80NF10 is a compatible substitute with enhanced current capacity at 80A continuous drain current. This device maintains 100V Vdss and the full operating temperature range. The STP80NF10 features superior power dissipation capability at 300W (Tc), significantly exceeding the original 140W specification. On-state resistance is 15mOhm at 40A and 10V, providing comparable electrical performance. Gate charge is elevated at 182nC, indicating slower switching characteristics than the original part. The STP80NF10 is ROHS3 Compliant with Active product status and represents the STripFET™ II technology series.

STP45N10F7 (STMicroelectronics)

The STP45N10F7 is a compatible substitute with reduced current capacity at 45A continuous drain current, below the original 62A specification. This device maintains 100V Vdss and the full operating temperature range. The STP45N10F7 features the lowest power dissipation at 60W (Tc) and the lowest gate charge at 25nC, providing the fastest switching characteristics among all substitutes. On-state resistance is 18mOhm at 22.5A and 10V. The STP45N10F7 is ROHS3 Compliant with Active product status and represents the DeepGATE™ and STripFET™ VII technology series.

Frequently Asked Questions (FAQ)

Q: Can the IRFB4510PBF be used as a direct replacement for the IRFB4510GPBF?

A: Yes. The IRFB4510PBF is electrically and mechanically identical to the IRFB4510GPBF. Both parts feature 100V Vdss, 62A continuous drain current, 13.5mOhm Rds On, and 140W power dissipation. The primary difference is product status: IRFB4510PBF is Active while IRFB4510GPBF is Obsolete. The IRFB4510PBF is packaged in Tube format and is ROHS3 Compliant.

Q: What is the difference between the current ratings (Tc) and (Ta) specifications?

A: (Tc) indicates the continuous drain current rating at the case temperature, while (Ta) indicates the rating at ambient temperature. The IRFB4510GPBF and IRFB4510PBF specify 62A (Tc), while the CSD19534KCS specifies 100A (Ta). These represent different measurement conditions and should be evaluated based on your specific thermal management design.

Q: Can I use the CSD19534KCS in place of the IRFB4510GPBF if my application requires higher current capacity?

A: Yes, with design verification. The CSD19534KCS maintains 100V Vdss and the identical operating temperature range. The 100A current rating exceeds the original 62A specification. However, the CSD19534KCS has lower power dissipation (118W versus 140W) and significantly lower gate charge (22.2nC versus 87nC), which affects switching speed and thermal characteristics. Verify that your circuit design accommodates these parameter differences.

Q: Why does the STP45N10F7 have a lower current rating than the IRFB4510GPBF?

A: The STP45N10F7 is rated for 45A continuous drain current, which is below the original 62A specification. This part is suitable only for applications where the current requirement does not exceed 45A. The STP45N10F7 offers advantages in switching speed (25nC gate charge) and lower power dissipation (60W), making it appropriate for lower-current, higher-frequency switching applications.

Q: Are all substitute parts available in the same TO-220 package?

A: Yes. All substitute parts are packaged in TO-220 series configurations suitable for Through Hole mounting. The IRFB4510GPBF and IRFB4510PBF use TO-220AB, while the CSD19534KCS, STP45N10F7, and STP80NF10 use TO-220-3 or TO-220 designations. These package variants are mechanically compatible for standard TO-220 footprints.

Q: What is the significance of the gate charge (Qg) parameter in selecting a substitute?

A: Gate charge determines the switching speed and gate drive requirements. The IRFB4510GPBF has 87nC gate charge. Substitutes with lower gate charge (CSD19534KCS at 22.2nC, STP45N10F7 at 25nC) switch faster and require less gate drive energy. The STP80NF10 with 182nC gate charge switches more slowly and requires higher gate drive capability. Select based on your circuit's switching frequency and gate driver specifications.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed (IRFB4510PBF, CSD19534KCS, STP45N10F7, STP80NF10) are ROHS3 Compliant. The original IRFB4510GPBF does not specify RoHS status. All parts are REACH Unaffected and carry EAR99 ECCN classification.

Q: Which substitute offers the best thermal performance?

A: The STP80NF10 offers the highest power dissipation rating at 300W (Tc), compared to the original 140W specification. This part is suitable for applications requiring superior thermal management capability. However, verify that your application's current requirement (80A) and switching characteristics (182nC gate charge) are compatible with your design.

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