IRFB4215 N-Channel MOSFET 60V 115A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRFB4215 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage and 115A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRFB4215 operates across a temperature range of -55°C to 175°C (TJ) with a maximum power dissipation of 270W (Tc). As part of the HEXFET® series, it features a gate charge of 170 nC at 10V and an on-resistance (Rds On) of 9 mOhm at 54A and 10V gate-source voltage.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	60	V
Continuous Drain Current (Id) @ 25°C	115	A (Tc)
On-Resistance (Rds On) @ 54A, 10V	9	mOhm
Gate Charge (Qg) @ 10V	170	nC
Gate-Source Threshold Voltage (Vgs(th)) @ 250µA	4	V
Maximum Gate-Source Voltage (Vgs)	±20	V
Input Capacitance (Ciss) @ 25V	4080	pF
Power Dissipation (Max)	270	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	Non-compliant

Substitute Part Grouping Explanation

Substitution of the IRFB4215 is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The following criteria establish valid substitution relationships:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 60V
Continuous Drain Current (Id): Must equal or exceed 115A at 25°C (Tc)
Package Type: Must be TO-220AB or compatible TO-220-3 Through Hole configuration
Gate-Source Voltage Range (Vgs): Must support ±20V or greater
Operating Temperature Range: Must span -55°C to 175°C (TJ) or equivalent

Secondary Compatibility Parameters:

On-Resistance (Rds On): Lower values indicate improved performance; values at or below 9 mOhm at comparable test conditions ensure functional equivalence
Gate Charge (Qg): Values at or below 170 nC at 10V ensure compatible switching characteristics
Input Capacitance (Ciss): Values within ±20% of 4080 pF maintain circuit timing compatibility

The substitute parts listed below meet these criteria with varying degrees of parameter alignment. Parts are grouped by their primary electrical characteristics and product status.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Ciss (pF)	Pd Max (W)	Package	Status	RoHS
IRFB4215	Infineon	60	115	9	170	4	4080	270	TO-220AB	Obsolete	Non-compliant
IRFB3306PBF	Infineon	60	120	4.2	120	4	4520	230	TO-220AB	Active	ROHS3 Compliant
PSMN4R6-60PS,127	Nexperia	60	100	4.6	70.8	4	4426	211	TO-220AB	Obsolete	ROHS3 Compliant
PSMN3R0-60PS,127	Nexperia	60	100	3	130	4	8079	306	TO-220AB	Obsolete	ROHS3 Compliant
STP76NF75	STMicroelectronics	75	80	11	160	4	3700	300	TO-220	Active	ROHS3 Compliant
STP60NF06L	STMicroelectronics	60	60	14	66	1	2000	110	TO-220	Active	ROHS3 Compliant
IXTP90N055T2	IXYS	55	90	8.4	42	4	2770	150	TO-220-3	Active	ROHS3 Compliant
AOT2610L	Alpha & Omega	60	55	10.7	30	2.5	2007	75	TO-220	Active	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IRFB3306PBF

The IRFB3306PBF is the manufacturer-recommended substitute for the IRFB4215. Both devices are manufactured by Infineon Technologies within the HEXFET® series. The IRFB3306PBF meets or exceeds all primary substitution criteria: 60V Vdss, 120A continuous drain current (exceeding the 115A requirement), TO-220AB package compatibility, and ±20V Vgs support. The IRFB3306PBF is classified as Active with ROHS3 compliance, addressing the obsolescence and regulatory compliance limitations of the IRFB4215. On-resistance is improved at 4.2 mOhm, and gate charge is reduced to 120 nC, resulting in superior switching performance and reduced power dissipation (230W vs. 270W).

Secondary Recommendations:

PSMN4R6-60PS,127 (Nexperia) provides electrical equivalence at 60V and 100A continuous drain current with 4.6 mOhm on-resistance. This part is suitable for applications where the full 115A capability is not required. ROHS3 compliance is provided, though product status is Obsolete.

PSMN3R0-60PS,127 (Nexperia) offers superior on-resistance at 3 mOhm and highest power dissipation (306W) among 60V alternatives, supporting applications requiring maximum thermal performance. Product status is Obsolete with ROHS3 compliance.

STP76NF75 (STMicroelectronics) operates at 75V Vdss with 80A continuous drain current. This part is suitable for applications with higher voltage headroom requirements. Active product status and ROHS3 compliance are provided. The higher Vdss rating (75V vs. 60V) requires circuit validation to confirm compatibility.

STP60NF06L (STMicroelectronics) is rated for 60V and 60A continuous drain current. This part is suitable only for applications where drain current does not exceed 60A. Active product status and ROHS3 compliance are provided.

IXTP90N055T2 (IXYS) operates at 55V Vdss with 90A continuous drain current. The reduced Vdss rating (55V vs. 60V) requires circuit validation. Active product status and ROHS3 compliance are provided.

AOT2610L (Alpha & Omega Semiconductor) is rated for 60V and 55A continuous drain current. This part is suitable only for applications where drain current does not exceed 55A. Active product status and ROHS3 compliance are provided.

Frequently Asked Questions (FAQ)

Q: Can IRFB3306PBF directly replace IRFB4215 in existing designs?

A: Yes. The IRFB3306PBF meets all primary electrical and mechanical substitution criteria. Both devices feature identical 60V Vdss rating, compatible TO-220AB packaging, and ±20V Vgs support. The IRFB3306PBF exceeds the 115A continuous drain current requirement at 120A. No circuit modifications are required for direct substitution. Verify thermal management is adequate, as power dissipation differs (230W vs. 270W).

Q: What is the difference between TO-220AB and TO-220-3 packaging?

A: TO-220AB and TO-220-3 are equivalent mechanical packages for Through Hole mounting. Both feature three leads (Gate, Drain, Source) with identical pin spacing and thermal characteristics. Parts specified as TO-220 or TO-220-3 are mechanically compatible with TO-220AB footprints.

Q: Why do some substitute parts have lower drain current ratings than the IRFB4215?

A: Parts such as AOT2610L (55A), STP60NF06L (60A), and IXTP90N055T2 (90A) are listed as substitutes for applications where the full 115A capability is not required. These parts maintain electrical compatibility at reduced current levels and may offer advantages in specific applications such as improved on-resistance or reduced gate charge. Selection depends on actual circuit current requirements.

Q: Are all substitute parts RoHS compliant?

A: No. The IRFB4215 is RoHS non-compliant. IRFB3306PBF, PSMN4R6-60PS,127, PSMN3R0-60PS,127, STP76NF75, STP60NF06L, IXTP90N055T2, and AOT2610L are all ROHS3 compliant. If RoHS compliance is required for your application, select from the compliant alternatives listed.

Q: What is the significance of on-resistance (Rds On) differences between substitute parts?

A: On-resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce I²R losses. The IRFB4215 specifies 9 mOhm at 54A and 10V. IRFB3306PBF (4.2 mOhm), PSMN3R0-60PS,127 (3 mOhm), and PSMN4R6-60PS,127 (4.6 mOhm) offer improved on-resistance, reducing heat generation. IXTP90N055T2 (8.4 mOhm) and STP76NF75 (11 mOhm) are comparable or slightly higher. Select based on thermal budget requirements.

Q: Can STP76NF75 be used as a substitute despite its 75V Vdss rating?

A: STP76NF75 operates at 75V Vdss compared to the IRFB4215's 60V rating. This higher voltage rating does not prevent substitution in circuits designed for 60V operation. However, circuit validation is required to confirm that the higher Vdss rating does not introduce unintended behavior in gate drive circuits or switching characteristics. The part is electrically compatible but operates with additional voltage margin.

Q: What is gate charge (Qg) and why does it matter for substitution?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. The IRFB4215 specifies 170 nC at 10V. Substitute parts with lower gate charge (such as IRFB3306PBF at 120 nC or IXTP90N055T2 at 42 nC) require less gate drive energy and switch faster. Parts with higher gate charge (such as STP76NF75 at 160 nC) are comparable. Gate charge affects switching losses and gate driver power requirements. Verify gate driver capability when selecting substitutes with significantly different Qg values.

Q: Is PSMN3R0-60PS,127 preferred over PSMN4R6-60PS,127?

A: Both Nexperia parts are Obsolete. PSMN3R0-60PS,127 offers superior on-resistance (3 mOhm vs. 4.6 mOhm) and higher power dissipation capability (306W vs. 211W), making it preferable for thermally demanding applications. PSMN4R6-60PS,127 offers lower gate charge (70.8 nC vs. 130 nC), making it preferable for applications with limited gate drive capability. Selection depends on specific application requirements. For new designs, IRFB3306PBF (Active status) is recommended over both Obsolete alternatives.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message