IRFB4212PBF N-Channel 100V 18A MOSFET Equivalent & Substitute Parts

Part Overview

The IRFB4212PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 18A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 60W at the case temperature.

Key Parameters

Parameter	Value	Unit
Manufacturer Part Number	IRFB4212PBF	—
Manufacturer	Infineon Technologies	—
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	18	A
On-State Resistance (Rds On) @ 13A, 10V	72.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	5	V
Gate Charge (Qg) @ 10V	23	nC
Input Capacitance (Ciss) @ 50V	550	pF
Power Dissipation (Max)	60	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220AB	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRFB4212PBF is determined by the following critical parameters:

Primary Substitution Criteria:

FET Type: N-Channel (required)
Drain-to-Source Voltage (Vdss): 100V (minimum requirement)
Continuous Drain Current (Id): 18A or greater (minimum requirement)
Package Type: TO-220AB or compatible Through Hole package
Operating Temperature Range: -55°C to 175°C (minimum requirement)

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are grouped into two categories:

Category 1: Direct Equivalents (18A Rating) Parts with 18A continuous drain current rating in TO-220AB package, maintaining identical current handling and thermal characteristics.

Category 2: Higher Current Alternatives (>18A Rating) Parts with drain current ratings exceeding 18A, providing superior thermal headroom and lower on-state resistance while maintaining 100V Vdss rating and TO-220AB package compatibility.

Parameter Comparison

Part Number	Manufacturer	FET Type	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Package	Status
IRFB4212PBF	Infineon	N-Channel	100	18	72.5	23	550	TO-220AB	Obsolete
PHP18NQ10T,127	Nexperia	N-Channel	100	18	90	21	633	TO-220AB	Obsolete
STP24NF10	STMicroelectronics	N-Channel	100	26	60	41	870	TO-220	Active
STP30NF10	STMicroelectronics	N-Channel	100	35	45	55	1180	TO-220	Active
PSMN027-100PS,127	Nexperia	N-Channel	100	37	26.8	30	1624	TO-220AB	Obsolete
PSMN016-100PS,127	Nexperia	N-Channel	100	57	16	49	2404	TO-220AB	Obsolete
PSMN015-100P,127	Nexperia	N-Channel	100	75	15	90	4900	TO-220AB	Obsolete
PSMN009-100P,127	NXP Semiconductors	N-Channel	100	75	8.8	156	8250	TO-220AB	Active
IRF540L	Vishay Siliconix	N-Channel	100	28	77	72	1700	TO-262	Active

Engineering Selection Recommendations

For Direct Replacement (Identical Current Rating):

PHP18NQ10T,127 (Nexperia) is the primary direct equivalent. It maintains the 18A continuous drain current rating and TO-220AB package footprint. This part is RoHS3 Compliant and carries REACH Unaffected status. Although classified as Obsolete, it provides electrical compatibility with the IRFB4212PBF across all critical parameters. Gate charge is slightly lower (21 nC vs. 23 nC), reducing switching losses marginally.

For Active Product Status with Enhanced Performance:

STP24NF10 (STMicroelectronics) is an Active product offering 26A continuous drain current in a TO-220 package. It provides 44% higher current capacity with 17% lower on-state resistance (60 mOhm vs. 72.5 mOhm), improving thermal performance. RoHS3 Compliant status ensures regulatory alignment. Package compatibility requires verification for TO-220 vs. TO-220AB pinout equivalence in the target application.

STP30NF10 (STMicroelectronics) extends current capacity to 35A with further on-state resistance reduction to 45 mOhm. This part is suitable for applications requiring thermal margin or future current scaling. Active product status and RoHS3 compliance support long-term availability.

For Maximum Thermal Performance:

PSMN009-100P,127 (NXP Semiconductors) delivers 75A continuous drain current with 8.8 mOhm on-state resistance, providing 88% lower conduction losses than the IRFB4212PBF. Active product status ensures procurement continuity. This part is appropriate for high-current applications or designs requiring minimal thermal dissipation. Gate charge is elevated (156 nC), requiring gate drive circuit verification.

Package Considerations:

All recommended substitutes maintain Through Hole mounting compatibility. TO-220AB and TO-262 packages are mechanically and electrically interchangeable in most applications, though PCB layout verification is required. TO-220 packages (STP24NF10, STP30NF10) are standard equivalents with identical pinout to TO-220AB.

Frequently Asked Questions (FAQ)

Q1: Can I use STP24NF10 as a direct replacement for IRFB4212PBF?

STP24NF10 is electrically compatible as a substitute. It meets or exceeds all critical parameters: 100V Vdss, 26A continuous drain current (exceeds 18A requirement), and TO-220 package compatibility. However, PCB layout must accommodate the TO-220 package footprint. Verify gate drive circuit compatibility, as input capacitance is higher (870 pF vs. 550 pF).

Q2: What is the difference between TO-220AB and TO-262 packages?

Both are Through Hole packages with identical electrical pinout (Gate, Drain, Source). TO-220AB features a standard lead configuration suitable for most PCB designs. TO-262 (I2PAK) has longer leads and different mechanical dimensions. Mechanical compatibility must be verified before substitution. Electrical performance is equivalent.

Q3: Why do higher-current parts like PSMN009-100P,127 have lower on-state resistance?

Lower on-state resistance results from larger die area and optimized semiconductor geometry in higher-current devices. PSMN009-100P,127 (8.8 mOhm) vs. IRFB4212PBF (72.5 mOhm) reflects the 75A vs. 18A current rating difference. Lower resistance reduces conduction losses and heat generation, improving thermal efficiency.

Q4: Is PHP18NQ10T,127 a suitable replacement despite Obsolete status?

PHP18NQ10T,127 provides direct electrical equivalence with identical 18A rating and TO-220AB package. Obsolete status indicates discontinued production but does not affect electrical performance. Inventory availability (6082 Pcs) supports near-term procurement. For long-term designs, Active products (STP24NF10, STP30NF10, PSMN009-100P,127) are recommended.

Q5: How does gate charge affect circuit design?

Gate charge (Qg) determines the energy required to switch the MOSFET on and off. IRFB4212PBF requires 23 nC; PSMN009-100P,127 requires 156 nC. Higher gate charge increases switching losses and requires higher gate drive current. Gate drive circuit must supply sufficient current to meet the specified gate charge within the required switching time.

Q6: What does RoHS3 Compliance mean for component selection?

RoHS3 Compliance certifies that the component meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. RoHS3 Compliant parts (STP24NF10, STP30NF10, PHP18NQ10T,127) are suitable for applications subject to EU environmental regulations and are preferred for new designs.

Q7: Can I use a P-Channel MOSFET like IXTP18P10T as a substitute?

No. IXTP18P10T is a P-Channel device; IRFB4212PBF is N-Channel. These are fundamentally different semiconductor types with opposite polarity and cannot be interchanged. Circuit topology must be redesigned to accommodate P-Channel operation.

Q8: What is the significance of the 100V Vdss rating?

Vdss (Drain-to-Source Voltage) is the maximum voltage the MOSFET can withstand between drain and source terminals. 100V rating means the device operates safely up to 100V; exceeding this voltage causes device failure. All recommended substitutes maintain 100V Vdss, ensuring voltage compatibility with the original design.

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