IRFB3607PBF N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRFB3607PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage with 80A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and is designed for high-current switching applications. The part carries a "Not For New Designs" product status, indicating that Infineon has discontinued active development support. Identifying equivalent and substitute parts is necessary for design continuity, supply chain flexibility, and long-term product support.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 46A, 10V	9	mOhm
Gate-Source Voltage (Vgs) Maximum	±20	V
Power Dissipation (Tc)	140	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitution of the IRFB3607PBF is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 75V
Continuous Drain Current (Id): Must equal or exceed 80A at 25°C
Package Type: Must be TO-220 or TO-220AB through-hole configuration
Gate-Source Voltage (Vgs) Rating: Must accommodate ±20V or greater
Operating Temperature Range: Must span -55°C to 175°C minimum
RoHS Compliance: Must maintain ROHS3 Compliant status

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values indicate improved performance; values within 9–16 mOhm are functionally compatible
Power Dissipation: Minimum 140W at Tc; higher ratings provide thermal margin
Gate Charge (Qg): Values between 30–218 nC are acceptable for standard switching applications
Input Capacitance (Ciss): Range of 2770–6340 pF is compatible with standard gate drive circuits

Substitute parts listed below meet all primary criteria and maintain electrical compatibility within the specified parameter ranges.

Parameter Comparison

Parameter	IRFB3607PBF (Main)	STP75NF75	STP76NF75	STP140N8F7	STP140NF75	AOT470	PHP29N08T,127	PHP79NQ08LT,127	IXTP90N055T2
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	STMicroelectronics	Alpha & Omega	NXP	Nexperia	IXYS
Vdss (V)	75	75	75	80	75	75	75	75	55
Id @ 25°C (A, Tc)	80	80	80	90	120	100	27	73	90
Rds On (mOhm)	9 @ 46A, 10V	11 @ 40A, 10V	11 @ 40A, 10V	4.3 @ 45A, 10V	7.5 @ 70A, 10V	10.5 @ 30A, 10V	50 @ 14A, 11V	16 @ 25A, 10V	8.4 @ 25A, 10V
Vgs Max (V)	±20	±20	±20	±20	±20	±25	±30	±15	±20
Power Dissipation (W, Tc)	140	300	300	200	310	268	88	157	150
Qg (nC @ 10V)	84	160	160	96	218	136	19	30	42
Ciss (pF @ Vds)	3070 @ 50V	3700 @ 25V	3700 @ 25V	6340 @ 40V	5000 @ 25V	5640 @ 30V	810 @ 25V	3026 @ 25V	2770 @ 25V
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	TO-220AB	TO-220	TO-220	TO-220	TO-220	TO-220	TO-220AB	TO-220AB	TO-220-3
Product Status	Not For New Designs	Active	Active	Active	Active	Active	Active	Obsolete	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	Not Specified	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Tier 1 Direct Substitutes (Highest Compatibility):

STP75NF75 and STP76NF75 are functionally equivalent to the IRFB3607PBF. Both devices are manufactured by STMicroelectronics, rated for 75V/80A, packaged in TO-220, and maintain ROHS3 compliance. These parts are currently in active production status and provide superior power dissipation ratings (300W vs. 140W). The slightly higher Rds On (11 mOhm vs. 9 mOhm) is within acceptable tolerance for most applications. Gate charge characteristics are comparable, supporting existing gate drive designs.

Tier 2 Enhanced Performance Substitutes:

STP140N8F7 (STMicroelectronics) offers 80V/90A rating with improved Rds On of 4.3 mOhm, providing lower conduction losses. STP140NF75 (STMicroelectronics) provides 75V/120A with 7.5 mOhm Rds On and 310W power dissipation, suitable for applications requiring higher current capacity. Both maintain ROHS3 compliance and active product status. These options are appropriate when thermal performance or current headroom is a design priority.

Tier 3 Alternative Substitutes (Conditional Use):

AOT470 (Alpha & Omega Semiconductor) is rated 75V/100A with 268W power dissipation and ROHS3 compliance. This part is suitable for applications where the higher continuous current rating provides design margin. IXTP90N055T2 (IXYS) operates at 55V/90A, which is acceptable only in applications where the lower voltage rating does not compromise circuit performance. PHP29N08T,127 (NXP) is rated 75V/27A and is suitable only for lower-current applications; it does not meet the 80A minimum requirement for direct substitution.

Not Recommended:

PHP79NQ08LT,127 (Nexperia) carries an "Obsolete" product status and should not be selected for new designs or long-term supply chain planning, despite meeting electrical parameters.

Frequently Asked Questions (FAQ)

Q: Can I use STP75NF75 or STP76NF75 as direct replacements for IRFB3607PBF?

A: Yes. Both parts are rated 75V/80A in TO-220 packaging with ROHS3 compliance and active production status. Electrical parameters are within compatible ranges. The primary difference is package designation (TO-220 vs. TO-220AB), which are mechanically interchangeable in standard through-hole PCB layouts.

Q: What is the difference between STP75NF75 and STP76NF75?

A: Both devices are electrically identical, rated 75V/80A with 11 mOhm Rds On and 300W power dissipation. The part number difference reflects internal STMicroelectronics product line organization. Either part is functionally equivalent for circuit design purposes.

Q: Why does STP140N8F7 have a lower Rds On (4.3 mOhm) than the IRFB3607PBF (9 mOhm)?

A: STP140N8F7 incorporates STMicroelectronics' DeepGATE and STripFET VII technology, which provides improved on-state resistance characteristics. Lower Rds On reduces conduction losses and heat generation, offering performance enhancement over the legacy IRFB3607PBF design.

Q: Can I use IXTP90N055T2 as a substitute if my circuit operates below 55V?

A: IXTP90N055T2 is rated for 55V maximum drain-to-source voltage. Use this part only in applications where the operating voltage does not exceed 55V. For circuits designed for 75V operation, this part does not meet voltage requirements and should not be used.

Q: Is PHP29N08T,127 suitable for 80A applications?

A: No. PHP29N08T,127 is rated for 27A continuous drain current, which is significantly below the 80A requirement of the IRFB3607PBF. This part is suitable only for lower-current applications and does not provide functional equivalence.

Q: Should I consider PHP79NQ08LT,127 for new designs?

A: No. PHP79NQ08LT,127 carries an "Obsolete" product status. Although electrical parameters are compatible, obsolete parts present supply chain risk and should not be selected for new designs or long-term applications.

Q: What is the impact of higher gate charge (Qg) in STP140NF75 compared to IRFB3607PBF?

A: STP140NF75 has gate charge of 218 nC versus 84 nC for IRFB3607PBF. Higher gate charge requires longer switching times and increased gate drive power. Verify that existing gate drive circuits can supply the required charge within acceptable switching frequency limits. For most standard applications, this difference is manageable with standard gate drivers.

Q: Are all substitute parts ROHS3 compliant?

A: STP75NF75, STP76NF75, STP140N8F7, STP140NF75, AOT470, PHP79NQ08LT,127, and IXTP90N055T2 are all ROHS3 compliant. PHP29N08T,127 does not specify RoHS status in available documentation. Verify RoHS compliance with the manufacturer if regulatory certification is required.

Q: Can I mix IRFB3607PBF and substitute parts in parallel for higher current?

A: Parallel operation of different MOSFET types is not recommended without detailed thermal and current-sharing analysis. Differences in Rds On temperature coefficients and threshold voltage characteristics can cause unequal current distribution. If parallel operation is required, use identical part numbers from the same manufacturing lot.

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