IRFB3607GPBF N-Channel MOSFET 75V 80A Equivalent & Substitute Parts

Part Overview

The IRFB3607GPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 75V drain-to-source voltage and 80A continuous drain current in a TO-220AB through-hole package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing production and maintenance applications. The HEXFET® series design provides standard performance characteristics suitable for switching and linear applications requiring moderate voltage and current ratings.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	75	V
Continuous Drain Current (Id) @ 25°C	80	A (Tc)
On-State Resistance (Rds On) @ 46A, 10V	9	mOhm
Gate Threshold Voltage (Vgs(th)) @ 100µA	4	V
Gate Charge (Qg) @ 10V	84	nC
Power Dissipation (Max)	140	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220-3	Through Hole

Substitute Part Grouping Explanation

Substitution of the IRFB3607GPBF is determined by the following critical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): 75V minimum
Continuous Drain Current (Id): 80A minimum at Tc
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: -55°C to 175°C minimum
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Similar or lower values for switching performance
Power Dissipation: Equal or higher ratings acceptable

Substitute parts are grouped into two categories: Direct Equivalents (matching all primary criteria) and Enhanced Alternatives (exceeding current or voltage ratings while maintaining compatibility).

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ Tc (A)	Rds On (mOhm)	Qg (nC)	Pd Max (W)	Status	Package
IRFB3607GPBF	Infineon	75	80	9 @ 46A	84	140	Obsolete	TO-220AB
IRFB3607PBF	Infineon	75	80	9 @ 46A	84	140	Not For New Designs	TO-220AB
STP75NF75	STMicroelectronics	75	80	11 @ 40A	160	300	Active	TO-220
STP76NF75	STMicroelectronics	75	80	11 @ 40A	160	300	Active	TO-220
STP140NF75	STMicroelectronics	75	120	7.5 @ 70A	218	310	Active	TO-220
STP140N8F7	STMicroelectronics	80	90	4.3 @ 45A	96	200	Active	TO-220
AOT470	Alpha & Omega Semiconductor	75	100	10.5 @ 30A	136	268	Active	TO-220
DMNH6008SCT	Diodes Incorporated	60	130	8 @ 20A	21	210	Active	TO-220-3

Engineering Selection Recommendations

Direct Equivalent (Preferred for Pin-Compatible Replacement):

IRFB3607PBF is the direct electrical and mechanical equivalent to IRFB3607GPBF. Both devices share identical electrical specifications (75V, 80A, 9mOhm Rds On, 84nC gate charge) and TO-220AB packaging. IRFB3607PBF is classified as "Not For New Designs" but remains suitable for legacy system maintenance and repair applications. This part carries ROHS3 compliance and maintains the same thermal and electrical performance envelope.

Active Production Alternatives (75V, 80A Class):

STP75NF75 and STP76NF75 (STMicroelectronics) are functionally equivalent N-Channel MOSFETs rated for 75V and 80A continuous drain current. Both devices feature STripFET™ II technology, TO-220 packaging, and Active product status. These parts exhibit slightly higher on-state resistance (11mOhm versus 9mOhm) but deliver superior power dissipation capability (300W versus 140W), making them suitable for thermal margin applications. Gate charge is higher (160nC versus 84nC), affecting switching speed characteristics.

Enhanced Current Rating Alternative (75V, 120A Class):

STP140NF75 (STMicroelectronics) provides 75V rating with 120A continuous drain current, representing a 50% current increase over the IRFB3607GPBF. This device features improved on-state resistance (7.5mOhm) and significantly higher power dissipation (310W). STP140NF75 is suitable for applications requiring higher current capacity within the same voltage class. Product status is Active with ROHS3 compliance.

Enhanced Voltage and Current Alternative (80V, 90A Class):

STP140N8F7 (STMicroelectronics) offers 80V drain-to-source voltage with 90A continuous drain current. This device features superior on-state resistance (4.3mOhm) and higher power dissipation (200W). The 80V rating provides additional voltage margin for transient protection. Product status is Active with ROHS3 compliance and STripFET™ VII technology.

Higher Current Alternative (75V, 100A Class):

AOT470 (Alpha & Omega Semiconductor) provides 75V rating with 100A continuous drain current at Tc. This device features 10.5mOhm on-state resistance and 268W power dissipation. Product status is Active with ROHS3 compliance. Gate charge is 136nC, representing a moderate increase from the original specification.

Lower Voltage, Higher Current Alternative (60V, 130A Class):

DMNH6008SCT (Diodes Incorporated) is rated for 60V drain-to-source voltage with 130A continuous drain current. This device features the lowest on-state resistance (8mOhm) and 210W power dissipation. DMNH6008SCT carries AEC-Q101 automotive qualification and ROHS3 compliance. This part is suitable only for applications where 60V maximum voltage is acceptable, as it does not meet the 75V requirement of the original specification.

Frequently Asked Questions (FAQ)

Q: Can IRFB3607PBF directly replace IRFB3607GPBF in existing designs?

A: Yes. IRFB3607PBF is electrically and mechanically identical to IRFB3607GPBF. Both devices share 75V Vdss, 80A Id, 9mOhm Rds On, and TO-220AB packaging. The only difference is product status classification. IRFB3607PBF is suitable for maintenance and repair of legacy systems.

Q: What is the primary difference between STP75NF75/STP76NF75 and the original IRFB3607GPBF?

A: STP75NF75 and STP76NF75 maintain identical voltage (75V) and current (80A) ratings but feature higher power dissipation (300W versus 140W) and slightly higher on-state resistance (11mOhm versus 9mOhm). These devices are suitable for applications requiring improved thermal performance. Gate charge is higher (160nC versus 84nC), which may affect switching frequency characteristics.

Q: Can STP140NF75 be used as a drop-in replacement for IRFB3607GPBF?

A: STP140NF75 is pin-compatible in TO-220 packaging but provides enhanced specifications: 75V voltage rating (matching), 120A current rating (50% higher), 7.5mOhm on-state resistance (improved), and 310W power dissipation (significantly higher). This device is suitable for applications requiring higher current capacity. Verify that the application circuit can tolerate the lower on-state resistance and different gate charge characteristics.

Q: Is DMNH6008SCT suitable as a substitute for IRFB3607GPBF?

A: DMNH6008SCT is not recommended as a direct substitute. While it offers superior current rating (130A) and lower on-state resistance (8mOhm), the 60V drain-to-source voltage rating is below the original 75V specification. This device is suitable only for applications where maximum voltage does not exceed 60V. DMNH6008SCT carries AEC-Q101 automotive qualification, making it suitable for automotive applications within its voltage rating.

Q: What are the key electrical differences between STP140N8F7 and IRFB3607GPBF?

A: STP140N8F7 features 80V drain-to-source voltage (5V higher than original), 90A continuous drain current (10A higher), 4.3mOhm on-state resistance (improved), and 200W power dissipation (higher). Gate charge is 96nC, slightly higher than the original 84nC. This device provides additional voltage margin and improved switching characteristics. Product status is Active.

Q: Are all substitute parts ROHS3 compliant?

A: Yes. All substitute parts listed (IRFB3607PBF, STP75NF75, STP76NF75, STP140NF75, STP140N8F7, AOT470, and DMNH6008SCT) carry ROHS3 compliance certification. All devices maintain Moisture Sensitivity Level 1 (Unlimited) and REACH Unaffected status.

Q: What is the difference between TO-220AB and TO-220 packaging?

A: TO-220AB and TO-220 are functionally equivalent through-hole packages with identical pin configurations and thermal characteristics. Both feature three leads (Gate, Drain, Source) and are suitable for the same PCB layouts. The designation difference reflects minor manufacturing variations but does not affect electrical or mechanical compatibility.

Q: Which substitute part offers the best on-state resistance performance?

A: STP140N8F7 features the lowest on-state resistance at 4.3mOhm (measured at 45A, 10V gate voltage), representing a 52% improvement over the original IRFB3607GPBF specification of 9mOhm. This lower resistance reduces power dissipation in switching applications and improves thermal efficiency.

Q: Can AOT470 be used in high-frequency switching applications?

A: AOT470 features 136nC gate charge, which is higher than the original IRFB3607GPBF (84nC). Higher gate charge increases switching time and may reduce maximum switching frequency capability. Verify that the application's gate driver circuit can supply sufficient current to meet the switching frequency requirements before selecting this device.

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